摘要:
A light-emitting device includes a light-emitting element that emits light of an amount based on the size of a driving current; a driving transistor, the gate thereof being electrically connected to a first node, that outputs a current flowing between the drain-source as the driving current; and a control unit that supplies a first data potential to the first node and supplies a current to the driving transistor so as to set the voltage between the gate and source of the driving transistor to a compensated voltage based on the mobility of the driving transistor, and then supplies a second data potential determined in accordance with the first data potential to the first node.
摘要:
There is provided a method of driving a pixel circuit that includes a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is interposed between a path, which is formed between the light emitting element and the driving transistor, and a gate of the driving transistor; a selection switch that is interposed between the gate of the driving transistor and a signal line; and a first control switch that is interposed between the gate of the driving transistor and the signal line and is connected to the selection switch in series.
摘要:
Provided is a method of driving a pixel circuit including a light emitting element and a driving transistor which are connected in series, and a storage capacitor disposed between the path between the light emitting element and the driving transistor and the gate of the driving transistor, the method including the steps of: supplying a driving signal, of which the time rate of change of the potential varies over time, to a gate of the driving transistor; stopping the supply of the driving signal at a point in time which is set to be variable in accordance with a gradation specified for the pixel circuit; and supplying a driving current corresponding to an open circuit voltage of the storage capacitor to the light emitting element.
摘要:
A light emitting apparatus includes a pixel circuit, and a drive circuit which drives the pixel circuit. The pixel circuit has a light emitting device, a driving transistor connected in series to the light emitting device, a capacitive element arranged between a gate and a source of the driving transistor, a first switching device arranged between the gate of the driving transistor and a signal line corresponding to the pixel circuit, and a second switching device arranged between the source of the driving transistor and a reset line.
摘要:
There is provided a method of driving a pixel circuit. The method includes: performing a compensating operation of asymptotically causing the voltage across the storage capacitance to converge with a voltage corresponding to a threshold voltage of the driving transistor by applying a first reference voltage to the gate of the driving transistor, over a time duration variably set according to a gradation value designated to the pixel circuit, in a compensating period after the elapse of the resetting period; changing the voltage across the storage capacitance from a voltage set by the compensating operation to a voltage corresponding to the gradation value by applying a gradation voltage corresponding to the gradation value from a signal line to the gate of the driving transistor, in a writing period after the elapse of the compensating period.
摘要:
A method of driving a plurality of pixel circuits. The pixel circuits are disposed corresponding to intersections between a plurality of scanning lines and a plurality of signal lines. Each of the pixel circuits includes: a light emitting element; a driving transistor; a holding capacitor; and a selection switch electrically interconnecting the signal line and the gate of the driving transistor at the time of the selection of the scanning line. The method includes: supplying a gradation potential to each signal line during a first period, selecting the scanning line during a second period, and supplying the gradation potential to the gate of the driving transistor; controlling the driving transistor of each of the pixel circuits to be in an ON state, supplying a reference potential to the gate of the corresponding driving transistor, and executing a first compensation operation and supplying driving current to the light emitting element.
摘要:
A light emitting device includes: a pixel circuit; and a driving circuit that drives the pixel circuit, wherein the pixel circuit includes: a light emitting element; a driving transistor that is connected to the light emitting element in series; a storage capacitor that is located between a gate of the driving transistor and a source of the driving transistor; and a selecting transistor that is located between the gate of the driving transistor and a signal line that corresponds to the pixel circuit, after a writing period starts, the driving circuit sets a potential of a selection signal to a selection potential to turn on the selecting transistor and outputs a data potential to the signal line to cause a current corresponding to the data potential to flow in the driving transistor, the selection signal being to be supplied to the gate of the selecting transistor, the data potential being changed over time, and after the driving circuit sets the potential of the selection signal to the selection potential and outputs the data potential, the driving circuit changes, from the selection potential, the potential of the selection signal over time until the end time of the writing period to turn off the selecting transistor and thereby stop supply of the data potential and sets, to a rate corresponding to a gradation specified for the pixel circuit, a rate of change of the data potential at the time when the supply of the data potential to the driving transistor is stopped.
摘要:
Provided is a method of driving a pixel circuit including a light emitting element and a driving transistor which are connected in series to each other, and a storage capacitor disposed between a path between the light emitting element and the driving transistor and a gate of the driving transistor, the method including the steps of: supplying a driving signal to a gate of the driving transistor; and changing the potential of the driving signal over time so that the time rate of change of the potential of the driving signal at the point in time when the supply of the driving signal stops becomes the time rate of change corresponding to a specified gradation of the pixel circuit.
摘要:
Provided is a light emitting apparatus where each pixel circuit is provided with the reset transistor, which is disposed between the node of the pixel circuit and the first feed line corresponding to the adjacent pixel circuit in the second direction as viewed from the pixel circuit. In addition, in the initialization period before the selection period, in which the scan line corresponding to the pixel circuit is selected, and in the compensation period, the reset transistor of the pixel circuit is set to the ON state, and the values of the power supply voltages output to the first feed line corresponding to the pixel circuit and the first feed line corresponding to the adjacent pixel circuit in the second direction as viewed from the pixel circuit are variably controlled, so that the initialization or compensation operation of the pixel circuit is performed.
摘要:
To provide a method of manufacturing a semiconductor device, a method of manufacturing an active matrix substrate, and an electrooptic device in which in forming different type TFTs on the same substrate, a variation in the LDD length or offset length of TFT can be suppressed by a small number of steps. In the method of manufacturing an active matrix substrate, a patterning mask 554 used for forming gate electrodes 15 and 25 is left, and used in introducing a medium concentration of phosphorus ion to introduce impurities in self alignment with the patterning mask 554. Next, with the patterning mask 554 removed, low-concentration of phosphorus ion is introduced by using the gate electrodes 15 and 25 as a mask to form low-concentration source-drain regions 111, 121, 211 and 221 in self alignment with the gate electrodes 15 and 25. The LDD length of each of the regions is equal to the amount of side etching caused in patterning the gate electrodes 15 and 25.