摘要:
A solid state imager element has a sensor portion, a register portion and a read gate portion for reading a signal charge from the sensor portion and transferring the same to the register portion, wherein a potential difference is formed in the read gate portion in a reading and transferring direction for directing an unnecessary charge or noise toward the register portion to thereby suppress noise in the sensor portion.
摘要:
The present invention is directed to a light source switching type color image scanner in which a color signal can be read out at high speed by reducing a read-out time. A red light source (3), a green light source (4) and a blue light source (5) which can be selectively switched are disposed under an original document holder (1) on which an original document (2) is held. Further, there are disposed a mirror (7) and a lens (8) which are used to focus a reflected image of the original document (2) onto a CCD linear image sensor (6). The CCD linear image sensor (6) includes a shutter gate (12) and a shutter drain (13) which are used to reset signal charges of remaining lights from the respective light sources (3), (4) and (5). The reset of a signal charge begins before a next color light source is energized.
摘要:
A charge transfer device comprising charge transfer means for transferring charges, a floating diffusion layer for accumulating the charges transferred from said charge transfer means, a floating gate electrode formed on said floating diffusion layer via an insulating layer, charge detection means connected to the floating gate electrode for outputting a voltage corresponding to an amount of charges accumulated in the floating diffusion layer, first precharge means connected to the floating gate electrode, the first precharge means starting precharging of the floating gate electrode responsive to transition of a first pulse voltage from a first state to a second state, the first precharge means terminating precharging of the floating gate electrode responsive to transition of the first pulse voltage from the second state to the first state, second precharge means connected to the floating diffusion layer, the second precharge means starting precharging of the floating diffusion layer responsive to transition of a second pulse voltage from a third state to a fourth state, the second precharge means terminating precharging of the floating diffusion layer responsive to transition of the second pulse voltage from the fourth state to the third state, first pulse supply means for supplying the first pulse voltage to the first precharge means, and second pulse supply means for supplying the second pulse voltage to the second precharge means, transition of the second pulse voltage from the third state to the fourth state being produced following transition of the first pulse voltage from the first state to the second state. In a preferred embodiment, transition of the first pulse voltage from the second state to the first state is produced following transition of the second pulse voltage from the fourth state to the third state.
摘要:
A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要:
A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要:
A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要:
A solid state imaging device with a plurality of line sensors in which each line sensor receives the light through the divided light paths from a straight line of a document into each unit is disclosed. The divided light paths are obtained by bending each rod lens of the rodlenses array, providing concave or convex lenses or convex mirrors or by providing transparent plates at different angles. As a result of the dividing of light path the line sensors pick up linear image data without abutting each sensor in a straight line.
摘要:
A linear image sensor device with at least two lines including linear sensors 10, 20, which device is capable of showing a wide dynamic range. In the linear image sensor device, one linear sensor 10 is made to have a high sensitivity, while the other linear sensor 20 is made to have a low sensitivity. The linear sensors are respectively equipped with readout gates 13, 23 for reading out charges from sensor arrays 12, 22 comprising a number of pixels and CCD analog shift registers 14, 24 for transferring the charges read out. In the other linear sensor 20, analog memories 29a, 29b are provided between the readout gate 23 and the CCD analog shift register 24. Owing to the provision of the analog memories 29a, 29b, the signal outputs OUT1, OUT2 simultaneously occur, which can eliminate a problem coming from the difference in position between the lines.
摘要:
Disclosed is a semiconductor device, such as a solid-state imager or a delay line, having its body and a peripheral circuit formed on the same chip, in which the peripheral circuit is divided into segments and dispersedly arranged around the body of the device. Such an arrangement reduces influence of dark current on the signal, which has been an outstanding problem encountered in such a semiconductor device.
摘要:
A solid state image pickup device being provided with a photoelectric converter portion being composed of a plurality of pixels disposed in a row, a charge transfer portion for transferring the charges generated in the photoelectric converter portion, and a charge/voltage converter portion for converting the charges transferred by the charge transfer portion into voltages, comprising; a timing pulse generator portion for generating at least more than one pulse signal from among the followings: a first pulse signal for driving the charge transfer portion, a second pulse signal for reading out the charges generated in the photoelectric converter portion, a third pulse signal for sweeping out the charges generated in the photoelectric converter portion and a fourth pulse signal for discharging the charges transferred to the charge/voltage converter portion, and a switch circuit for switching over at least one pulse signal out of the abovementioned pulse signals to a predetermined fixed potential or a floating level.