公开(公告)号：US07573521B2

公开(公告)日：2009-08-11

申请号：US11478685

申请日：2006-07-03

Applicant: Satoshi Yoshihara ,  Yasuhito Maki

Inventor： Satoshi Yoshihara ,  Yasuhito Maki

IPC: H04N5/335

CPC classification number: H04N5/3692 ,  H04N5/361 ,  H04N5/372 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765 ,  H04N5/378

Abstract: When a signal output by a solid-state image sensing device is clamped to a predetermined reference potential, a high voltage generated in a transfer suspension period after the clamping as generally supplied to an A/D converter is generated. A sample/hold output Va is clamped to a clamp level Vref over a period of time between a halfway point of time of a signal of a picture element preceding ahead by one line and the end of an inhibit period of transfer clocks of a signal output by an empty transmission unit via a first clamp pulse and a sample/hold output for the second picture element, or a subsequent one of an OPB unit is clamped to the clamp level via a second clamp pulse to prevent a signal output from exceeding a reference voltage from being supplied to an A/D converter at a later stage.

公开(公告)号：US20050168428A1

公开(公告)日：2005-08-04

申请号：US11086433

申请日：2005-03-23

Applicant: Yoshiharu Nakajima ,  Yasuhito Maki ,  Toshikazu Maekawa

Inventor： Yoshiharu Nakajima ,  Yasuhito Maki ,  Toshikazu Maekawa

IPC: G09G3/20 ,  G09G3/30 ,  G09G3/36

CPC classification number: G09G3/2011 ,  G09G3/30 ,  G09G3/3677 ,  G09G3/3688 ,  G09G3/3696 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/027 ,  G09G2310/0294 ,  G09G2310/06

Abstract: A timing generation circuit (15) is formed integrally on the same glass substrate (11) together with a display area section (12) similarly to an H driver (13U) and a V driver (14), and timing pulses to be used by the H driver (13U) and the V driver (14) are produced based on timing data produced by a shift register (31U) of the H driver (13U) and a shift register (14A) of the V driver (14). The invention thereby provides a timing generation circuit which can contribute to miniaturization and reduction of the cost of the set and a display apparatus of the active matrix type in which the timing generation circuit is incorporated.

公开(公告)号：US06466267B1

公开(公告)日：2002-10-15

申请号：US09354849

申请日：1999-07-16

Applicant: Shinya Yoshida ,  Yasuhito Maki

Inventor： Shinya Yoshida ,  Yasuhito Maki

IPC: G03B1300

CPC classification number: H04N5/23212 ,  H04N5/2353

Abstract: An adaptive peak value detector, wherein the peak value for a peak hold section is detected, the peak hold section being selected by a peak hold control circuit. A solid-state imaging sensor generates pixel signals representative of an image and the peak value of portions of the pixel signals is detected. The exposure time of the sensor is adjusted as a function of the detected peak value and auto-focusing of the image for the camera is carried out on the basis of the image received during the adjusted exposure time.

Abstract translation: 一种自适应峰值检测器，其中检测峰值保持部分的峰值，峰值保持部分由峰值保持控制电路选择。 固态成像传感器生成表示图像的像素信号，并且检测像素信号的部分的峰值。 根据检测到的峰值调整传感器的曝光时间，并且基于在调节曝光时间期间接收到的图像执行用于照相机的图像的自动聚焦。

公开(公告)号：US5907357A

公开(公告)日：1999-05-25

申请号：US617565

申请日：1996-03-19

Applicant: Yasuhito Maki

Inventor： Yasuhito Maki

IPC: H01L27/148 ,  G11C27/04 ,  H01L21/339 ,  H01L29/762 ,  H03M1/66 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378 ,  H04N3/14

CPC classification number: G11C27/04

Abstract: A switching circuit comprising a means for holding a signal or a DC component thereof, and a switching transistor for driving the holding means, wherein another means is included for shaping the trailing edge to be more obtuse in the fall of a driving pulse applied to a gate of the switching transistor. There is also disclosed a charge transfer device comprising a charge transferrer for transferring a signal charge, a charge-voltage converter for converting the transferred signal charge into a proportional voltage, and a driver for supplying a reset pulse to the charge-voltage converter so as to reset the capacitance thereof to a predetermined potential, wherein another a means is incorporated in the driver for shaping the trailing edge to be more obtuse in the fall of the reset pulse. Since the trailing edge of the reset pulse at the time of turning off the reset is rendered more obtuse, it becomes possible to reduce the coupling portion of the output waveform where the potential of a floating diffusion or a floating gate is varied by the capacitive coupling which is derived from the parasitic capacitance between a reset drain and a reset gate.

Abstract translation: 一种开关电路，包括用于保持信号或其DC分量的装置，以及用于驱动保持装置的开关晶体管，其中包括用于使后缘成形的驱动脉冲在施加到 开关晶体管的栅极。 还公开了一种电荷转移装置，包括用于传送信号电荷的电荷转移器，用于将传送的信号电荷转换成比例电压的电荷 - 电压转换器，以及用于向电荷 - 电压转换器提供复位脉冲的驱动器，以便 以将其电容复位到预定电位，其中另一个装置被并入驱动器中，用于使后缘成形，以在复位脉冲的下降中变得更钝。 由于在关闭复位时复位脉冲的后沿变得更钝，所以可以减少浮动扩散或浮动栅极的电位通过电容耦合而变化的输出波形的耦合部分 其来自复位漏极和复位栅极之间的寄生电容。

公开(公告)号：US5808673A

公开(公告)日：1998-09-15

申请号：US452578

申请日：1995-05-25

Applicant: Yasuhito Maki

Inventor： Yasuhito Maki

IPC: H04N1/028 ,  H04N1/191 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/217

CPC classification number: H04N5/3592 ,  H04N3/1568 ,  H04N5/335 ,  H04N5/3597 ,  H04N5/372

Abstract: A solid state image pickup device includes a sensor section having a plurality of light-receiving regions arranged such that each of the light-receiving regions converts an incident light into signal charges of an amount corresponding to the amount of light. A charge transfer register transfers the signal charges read out from each of the light-receiving regions of the sensor section. A charge discharging section discharges charges stored in each of the light-receiving regions of the sensor section under control of control means such that charges stored in each of the light-receiving regions are discharged to the charge discharging section within a predetermined period of time upon rising voltage of the power supply.

Abstract translation: 固体摄像装置包括具有多个光接收区域的传感器部分，其布置成使得每个光接收区域将入射光转换成对应于光量的量的信号电荷。 电荷转移寄存器传送从传感器部分的每个光接收区域读出的信号电荷。 充电放电部分在控制装置的控制下放电存储在传感器部分的每个光接收区域中的电荷，使得存储在每个光接收区域中的电荷在预定时间段内被放电到电荷放电部分， 电源的上升电压。

公开(公告)号：US5612739A

公开(公告)日：1997-03-18

申请号：US610577

申请日：1996-03-07

Applicant: Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

Inventor： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

IPC: H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/378

CPC classification number: H04N5/361 ,  H04N5/37213 ,  H04N5/3728

Abstract: A charge transfer device including a charge input portion for inputting a reference charge, a charge transfer portion for receiving and transferring the reference charge, and a conversion portion converting the reference charge outputted from the charge transfer portion into a reference voltage. The reference charge input portion may be arranged to generate a reference charge. Alternatively, the reference charge may be externally generated. The charge transfer device may further include a signal charge input portion for inputting signal charges to the charge transfer portion. The signal charge input portion may be arranged to generate signal charges corresponding to incident light. Signal charges externally generated may be inputted to the signal charge input portion. The charge transfer device enables a charge-output voltage characteristic to be accurately detected at all times without any problem. It is also possible to accurately control the charge-output voltage characteristic.

Abstract translation: 一种电荷转移装置，包括用于输入参考电荷的电荷输入部分，用于接收和转移参考电荷的电荷转移部分，以及将从电荷转移部分输出的参考电荷转换为参考电压的转换部分。 参考电荷输入部分可以被布置成产生参考电荷。 或者，可以从外部产生参考电荷。 电荷转移装置还可以包括用于向电荷转移部分输入信号电荷的信号电荷输入部分。 信号电荷输入部分可以被布置成产生对应于入射光的信号电荷。 外部产生的信号电荷可以被输入到信号电荷输入部分。 电荷转移装置能够始终没有任何问题地一直准确地检测电荷输出电压特性。 也可以精确地控制充放电电压特性。

公开(公告)号：US5539226A

公开(公告)日：1996-07-23

申请号：US476028

申请日：1995-06-07

Applicant: Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

Inventor： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC: H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC classification number: H01L29/42396 ,  H01L29/76816

Abstract: A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

Abstract translation: 一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷， 输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压， 栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端 栅极区域具有第二输出栅极电极 在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

公开(公告)号：US5455443A

公开(公告)日：1995-10-03

申请号：US226044

申请日：1994-04-11

Applicant: Yasuhito Maki ,  Satoshi Yoshihara

Inventor： Yasuhito Maki ,  Satoshi Yoshihara

IPC: H01L27/148 ,  H01L29/768 ,  H01L27/14 ,  H01L31/00

CPC classification number: H01L27/14887

Abstract: A CCD solid state imaging device has an overflow mechanism to discharge excess electric charges at the sensor section. An overflow level can be stabilized without adjustment. The CCD solid state imaging device includes an overflow barrier region for determining an amount of electric charges handled by a sensor section, and an overflow drain region for discharging excess electric charges at the sensor section adjacent to the sensor section. An intermediate region having the same potential as that of the sensor portion is provided between the overflow barrier region and the overflow drain region. Also, a CCD solid state imaging device includes linear sensors provided in a plurality of lines and vertical transfer registers provided at end of the linear sensors in the charge transfer direction of the horizontal transfer registers. When signal charges are overflowed in a part of the horizontal transfer register, signals of all pixels can be avoided from being destroyed. In a CCD solid state imaging device having linear sensors arranged in a plurality of lines, and vertical transfer registers provided at ends of the linear sensors in the charge transfer direction of the horizontal transfer registers, there is formed a limit region for limiting electric charges to a predetermined amount before electric charges are transferred from the horizontal transfer register to the vertical transfer register.

Abstract translation: CCD固态成像装置具有用于在传感器部分排出过量电荷的溢出机构。 溢出水平可以稳定而无需调整。 CCD固态成像装置包括用于确定由传感器部分处理的电荷量的溢出屏障区域和用于在与传感器部分相邻的传感器部分处排出多余电荷的溢出漏极区域。 在溢出阻挡区域和溢出漏极区域之间设置具有与传感器部分相同的电位的中间区域。 此外，CCD固态成像装置包括设置在多条线中的线性传感器和在水平传送寄存器的电荷传送方向上设置在线性传感器的端部处的垂直传送寄存器。 当信号电荷在水平传送寄存器的一部分中溢出时，可以避免所有像素的信号被破坏。 在具有布置在多条线中的线性传感器的CCD固态成像装置中，以及设置在水平传送寄存器的电荷传送方向上的线性传感器的端部处的垂直传送寄存器，形成用于限制电荷的极限区域 电荷从水平传送寄存器传送到垂直传送寄存器之前的预定量。

公开(公告)号：US5189499A

公开(公告)日：1993-02-23

申请号：US771867

申请日：1991-10-08

Applicant: Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

Inventor： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

IPC: H01F7/06 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/105 ,  H01L29/51

CPC classification number: H01L21/28202 ,  H01L21/8234 ,  H01L27/1057 ,  H01L29/513 ,  H01L29/518

Abstract: A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.

Abstract translation: 电荷耦合器件具有在传输电极，浮置电极和邻近浮置电极的电极之下形成的多层结构绝缘层，从而可以成功地防止电荷耦合器件的电荷转移部分中的针孔现象。 另一方面，在周边部件的栅电极的下方形成底层结构绝缘层，使得能够成功地将外围部件的栅电极的阈值电压控制在期望值。

公开(公告)号：US4939560A

公开(公告)日：1990-07-03

申请号：US331000

申请日：1989-03-29

Applicant: Tadakuni Narabu ,  Yasuhito Maki ,  Tetsuya Kondo

Inventor： Tadakuni Narabu ,  Yasuhito Maki ,  Tetsuya Kondo

IPC: H01L29/762 ,  H01L21/339 ,  H01L29/768

CPC classification number: H01L29/76816

Abstract: A charge transfer device, suitable for use, for example, in a solid state imager device, having a floating gate electrode in a charge detecting section, a protruding portion provided in at least one of the floating gate electrodes or a gate electrode arranged adjacent to the floating gate electrode, wherein the floating gate electrode and the gate electrode arranged adjacent to the floating gate electrode overlap each other at the protruding portion within an insulating layer, and whereby the parasitic capacitance associated with the floating gate electrode is decreased and the charge voltage converting gain is increased, rendering it possible to obtain an image signal with a good signal/noise ratio, when the charge transfer device is used for a solid state imager device.

Abstract translation: 一种电荷转移装置，适用于例如在固态成像器装置中，在电荷检测部分中具有浮置栅极电极，设置在至少一个浮栅电极中的突出部分或邻近 所述浮置栅极电极，其中与所述浮栅相邻配置的所述浮栅电极和所述栅电极在绝缘层内的所述突出部分处彼此重叠，由此与所述浮栅相关联的寄生电容降低，并且所述充电电压 当电荷转移装置用于固态成像装置时，转换增益增加，使得可以获得具有良好信号/噪声比的图像信号。