摘要:
A solid state image pickup device being provided with a photoelectric converter portion being composed of a plurality of pixels disposed in a row, a charge transfer portion for transferring the charges generated in the photoelectric converter portion, and a charge/voltage converter portion for converting the charges transferred by the charge transfer portion into voltages, comprising; a timing pulse generator portion for generating at least more than one pulse signal from among the followings: a first pulse signal for driving the charge transfer portion, a second pulse signal for reading out the charges generated in the photoelectric converter portion, a third pulse signal for sweeping out the charges generated in the photoelectric converter portion and a fourth pulse signal for discharging the charges transferred to the charge/voltage converter portion, and a switch circuit for switching over at least one pulse signal out of the abovementioned pulse signals to a predetermined fixed potential or a floating level.
摘要:
An image input device or a solid-state image sensing device using a CCD linear sensor includes a main sensor array and a sub sensor array. A transfer register for the sub sensor array is provided with charge sweep means for sweeping away unnecessary charges. Thus, only signals in the main sensor array are selectively read out without being affected by signals in the sub sensor array.
摘要:
A solid state image pickup device being provided with a photoelectric converter portion being composed of a plurality of pixels disposed in a row, a charge transfer portion for transferring the charges generated in the photoelectric converter portion, and a charge/voltage converter portion for converting the charges transferred by the charge transfer portion into voltages, comprising; a timing pulse generator portion for generating at least more than one pulse signal from among the followings: a first pulse signal for driving the charge transfer portion, a second pulse signal for reading out the charges generated in the photoelectric converter portion, a third pulse signal for sweeping out the charges generated in the photoelectric converter portion and a fourth pulse signal for discharging the charges transferred to the charge/voltage converter portion, and a switch circuit for switching over at least one pulse signal out of the abovementioned pulse signals to a predetermined fixed potential or a floating level.
摘要:
A linear image sensor device with at least two lines including linear sensors 10, 20, which device is capable of showing a wide dynamic range. In the linear image sensor device, one linear sensor 10 is made to have a high sensitivity, while the other linear sensor 20 is made to have a low sensitivity. The linear sensors are respectively equipped with readout gates 13, 23 for reading out charges from sensor arrays 12, 22 comprising a number of pixels and CCD analog shift registers 14, 24 for transferring the charges read out. In the other linear sensor 20, analog memories 29a, 29b are provided between the readout gate 23 and the CCD analog shift register 24. Owing to the provision of the analog memories 29a, 29b, the signal outputs OUT1, OUT2 simultaneously occur, which can eliminate a problem coming from the difference in position between the lines.
摘要:
In a three-line linear sensor, a first linear sensor (10) without electronic shutter structure and second and third linear sensors (20), (30) with electronic shutter structures (28), (38) being disposed in an axial symmetry fashion are combined and a line spacing (D1) between the first and second linear sensors (10), (20) can be reduced by an amount corresponding to the omitted electronic shutter structure. Also, since the second and third linear sensors (20), (30) are disposed in an axial symmetry fashion, a line spacing (D2) between the second and third linear sensors (20), (30) can be reduced and set to be substantially equal to the above-mentioned line spacing (D1).
摘要:
A CCD linear sensor as a solid-state imaging device has a photosensor and a pair of CCD registers connected to the photosensor. One of the CCD registers is supplied with first two-phase transfer clock signals for transferring electric charges from the photosensor to a first signal converter, and the other CCD register is supplied with second two-phase transfer clock signals for transferring electric charges from the photosensor to a second signal converter. The second two-phase transfer clock signals are shifted a 1/2 clock period from the first two-phase transfer clock signals. The CCD registers have the same number of dummy registers on their output ends for transferring the electric charges therethrough to the first and second signal converters, which convert the transferred electric charges into output signals that are in phase with each other. The periods of the output signals and the negative-going edges, i.e., the transitions, of reset pulses applied to the gates of FETS connected to the first and second signal converters are separate in time from each other, preventing coupling-induced noise from being included in the signal periods. The clock signals can thus be generated at a higher frequency and at a higher speed, making it possible to process the image signals at a higher frequency and at a higher speed.
摘要:
The present invention is directed to a light source switching type color image scanner in which a color signal can be read out at high speed by reducing a read-out time. A red light source (3), a green light source (4) and a blue light source (5) which can be selectively switched are disposed under an original document holder (1) on which an original document (2) is held. Further, there are disposed a mirror (7) and a lens (8) which are used to focus a reflected image of the original document (2) onto a CCD linear image sensor (6). The CCD linear image sensor (6) includes a shutter gate (12) and a shutter drain (13) which are used to reset signal charges of remaining lights from the respective light sources (3), (4) and (5). The reset of a signal charge begins before a next color light source is energized.
摘要:
The present invention intends to improve a difference between signal levels of odd-numbered pixels and even-numbered pixels in a CCD (charge coupled device) linear sensor. In a CCD linear sensor comprising a sensor region (1) having an array of a plurality of sensor elements (pixels) (S.sub.1), (S.sub.2), . . . and first and second horizontal transfer registers (4) and (5) disposed on the respective sides of the sensor region (1) through read-out gate sections (2) and (3) wherein signal charges of every other sensor elements (S.sub.1), (S.sub.3), (S.sub.5), . . . are transferred by the first horizontal transfer register (4) while signal charges of remaining every other sensor elements (S.sub.2), (S.sub.4), (S.sub.6) are transferred by the second horizontal transfer register (5), the first and second horizontal transfer registers (4) and (5) include first and second transfer electrodes (22R.sub.1), (22R.sub.2) to which two-phase drive pulses (.phi.H.sub.1) and (.phi.H.sub.2) are applied, respectively and electrode configurations at the read-out gate section side are formed substantially the same, whereby the capacity of a first transfer section (HR.sub.1) to which the drive pulse (.phi.H.sub.1) is applied is made equal to that of a second transfer section (HR.sub.2) to which the drive pulse (.phi.H.sub.2) is applied.
摘要:
A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.
摘要:
Disclosed is a semiconductor device, such as a solid-state imager or a delay line, having its body and a peripheral circuit formed on the same chip, in which the peripheral circuit is divided into segments and dispersedly arranged around the body of the device. Such an arrangement reduces influence of dark current on the signal, which has been an outstanding problem encountered in such a semiconductor device.