公开(公告)号：US5973736A

公开(公告)日：1999-10-26

申请号：US640677

申请日：1996-05-01

申请人： Seiichi Kawamoto ,  Tadakuni Narabu

发明人： Seiichi Kawamoto ,  Tadakuni Narabu

IPC分类号： H04N1/48 ,  H04N5/217 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378 ,  H04N9/04 ,  H04N3/14 ,  H04N5/335

CPC分类号： H04N5/361 ,  H04N1/486 ,  H04N5/3591 ,  H04N5/3692 ,  H04N5/37213 ,  H04N5/378 ,  H04N9/045 ,  H04N2209/049

摘要： The present invention is directed to a color linear sensor of a simple structure which can accurately measure a degree of a color mixture in a sensor section. In a color linear sensor having a dot-sequential sensor array (1), only one pixel of a predetermined color (R) in a reference pixel region (3) is allowed to receive an incident light. Then, a degree of color mixture is estimated by calculating a level difference between a signal output of this pixel and a signal output of a pixel of the same color as that of the former pixel in an effective pixel region (2). Also, the present invention is to provide a color linear sensor which can prevent sensors from being displaced from each other in position, simplify a configuration of an external circuit and which can prevent a color mixture from being caused by signal charges deteriorated after they are transferred by a transfer register. In a color linear sensor having a dot-sequential sensor array (1), read-out gates (22, 24) are formed as two-stage configuration for sequentially reading out signal charges from respective sensors (1R), (1G), (1B) of the dot-sequential sensor array (1) to a CCD register (23) at the unit of pixels, thereby to sequentially output signal charges of one line at every color in a line-sequential fashion.

摘要翻译： 本发明涉及一种能够精确地测量传感器部分中的混色度的简单结构的彩色线性传感器。 在具有点序传感器阵列（1）的彩色线性传感器中，只允许参考像素区域（3）中的预定颜色（R）的一个像素接收入射光。 然后，通过计算该像素的信号输出和与有效像素区域（2）中的前一个像素的颜色相同的颜色的像素的信号输出之间的电平差来估计颜色混合度。 另外，本发明是提供一种可以防止传感器在位置上彼此移位的彩色线性传感器，简化了外部电路的结构，并且能够防止在传输之后的信号电荷恶化引起混色。 通过转移寄存器。 在具有点序传感器阵列（1）的彩色线性传感器中，读出门（22,24）形成为两级配置，用于从相应的传感器（1R），（1G），（1G）， 点阵传感器阵列（1）的图1B所示的像素单元以CCD单位存储到CCD寄存器（23），从而按行顺序顺序输出每行颜色的一行信号电荷。

公开(公告)号：US5818075A

公开(公告)日：1998-10-06

申请号：US697178

申请日：1996-08-20

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device comprising charge transfer means for transferring charges, a floating diffusion layer for accumulating the charges transferred from said charge transfer means, a floating gate electrode formed on said floating diffusion layer via an insulating layer, charge detection means connected to the floating gate electrode for outputting a voltage corresponding to an amount of charges accumulated in the floating diffusion layer, first precharge means connected to the floating gate electrode, the first precharge means starting precharging of the floating gate electrode responsive to transition of a first pulse voltage from a first state to a second state, the first precharge means terminating precharging of the floating gate electrode responsive to transition of the first pulse voltage from the second state to the first state, second precharge means connected to the floating diffusion layer, the second precharge means starting precharging of the floating diffusion layer responsive to transition of a second pulse voltage from a third state to a fourth state, the second precharge means terminating precharging of the floating diffusion layer responsive to transition of the second pulse voltage from the fourth state to the third state, first pulse supply means for supplying the first pulse voltage to the first precharge means, and second pulse supply means for supplying the second pulse voltage to the second precharge means, transition of the second pulse voltage from the third state to the fourth state being produced following transition of the first pulse voltage from the first state to the second state. In a preferred embodiment, transition of the first pulse voltage from the second state to the first state is produced following transition of the second pulse voltage from the fourth state to the third state.

摘要翻译： 一种电荷转移装置，包括用于转移电荷的电荷转移装置，用于累积从所述电荷转移装置转移的电荷的浮动扩散层，经由绝缘层形成在所述浮动扩散层上的浮栅，电荷检测装置，连接到浮置栅极 电极，用于输出对应于在浮动扩散层中累积的电荷量的电压，第一预充电装置连接到浮动栅电极，第一预充电装置响应于来自第一个的第一脉冲电压的第一脉冲电压的转变而开始对浮栅的预充电 状态到第二状态，第一预充电装置响应于第一脉冲电压从第二状态转变到第一状态来终止浮栅的预充电，连接到浮动扩散层的第二预充电装置，第二预充电装置开始预充电 的浮动扩散层r 响应于第二脉冲电压从第四状态转换到第三状态，第二预充电装置响应于第二脉冲电压从第四状态转换到第三状态来终止浮动扩散层的预充电，第一脉冲供应装置 将第一脉冲电压提供给第一预充电装置;以及第二脉冲供给装置，用于将第二脉冲电压提供给第二预充电装置，第二脉冲电压从第三状态到第四状态的转变在第一脉冲转变之后产生 电压从第一状态到第二状态。 在优选实施例中，第二脉冲电压从第四状态转换到第三状态之后产生从第二状态到第一状态的第一脉冲电压的转变。

公开(公告)号：US5337163A

公开(公告)日：1994-08-09

申请号：US787948

申请日：1991-11-05

申请人： Seiichi Kawamoto ,  Maki Sato ,  Tadakuni Narabu ,  Hisanori Miura

发明人： Seiichi Kawamoto ,  Maki Sato ,  Tadakuni Narabu ,  Hisanori Miura

IPC分类号： H04N1/028 ,  H04N1/40 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/353 ,  H04N5/369 ,  H04N5/372 ,  H04N1/04 ,  H04N3/14

CPC分类号： H04N5/3692 ,  H04N1/40056

摘要： The present invention is directed to a linear image sensor, the electric charge storage time of which can be varied. According to an embodiment of the present invention, there is provided a linear image sensor in which a read-out gate and a charge-transfer gate are disposed on one side of an image sensor array, and a drain gate and a drain region are disposed on the other side of the image sensor array, whereby the electric charge storage time in which a signal charge is transferred by the charge-transfer register after the signal charge is read out by the application of a read-out signal to the read-out gate and the next read-out signal is applied to the read-out gate can be varied by varying the application timing of the drain gate signal. When the linear image sensor is applied to a facsimile, the output level can be adjusted and the light and shade can be controlled by varying the electric charge accumulation time in response to the change of light intensity of a light source or by the change of scan speed of the linear image sensor.

摘要翻译： 本发明涉及可以改变其电荷储存时间的线性图像传感器。 根据本发明的一个实施例，提供了一种线性图像传感器，其中读出栅极和电荷转移栅极设置在图像传感器阵列的一侧，并且排列栅极和漏极区域被布置 在图像传感器阵列的另一侧上，由此通过向读出的读出信号应用信号电荷后，由电荷转移寄存器传送信号电荷的电荷存储时间 栅极和下一个读出信号被施加到读出门可以通过改变漏极栅极信号的施加定时来改变。 当将线性图像传感器应用于传真机时，可以调节输出电平，并且可以通过响应于光源的光强度的改变或通过扫描的改变来改变电荷累积时间来控制光和阴影 线速图像传感器。

公开(公告)号：US5920063A

公开(公告)日：1999-07-06

申请号：US752377

申请日：1996-12-04

申请人： Seiichi Kawamoto ,  Tadakuni Narabu

发明人： Seiichi Kawamoto ,  Tadakuni Narabu

IPC分类号： H04N1/028 ,  H04N1/04 ,  H04N1/10 ,  H04N1/19 ,  H04N1/191 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/376 ,  H01J40/14

CPC分类号： H04N1/1918 ,  H04N1/1912 ,  H04N1/1013

摘要： A linear sensor includes first, second, and third linear sensor sections each composed of a linear array of sensor elements, wherein the linear arrays of sensor elements are spaced seven lines apart from each other. In operation, an image is sensed while moving the linear sensor three lines at a time. The output signals of the respective linear sensor sections are adjusted in terms of the timing relative to each other by a timing adjustment circuit. This allows the linear sensor to sense an image at a higher scanning speed and thus for a shorter time period.

摘要翻译： 线性传感器包括每个由传感器元件的线性阵列组成的第一，第二和第三线性传感器部分，其中传感器元件的线性阵列彼此间隔开7条线。 在操作中，一次移动线性传感器三行时，感测图像。 各个线性传感器部分的输出信号根据定时调整电路相对于彼此的定时进行调整。 这允许线性传感器以更高的扫描速度并因此在更短的时间周期内感测图像。

公开(公告)号：US5621231A

公开(公告)日：1997-04-15

申请号：US683865

申请日：1996-07-19

申请人： Seiichi Kawamoto ,  Tadakuni Narabu

发明人： Seiichi Kawamoto ,  Tadakuni Narabu

IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/376 ,  H01L29/768

CPC分类号： H01L27/14643 ,  H01L27/14654

摘要： There is disclosed a solid-state imager for preventing an unwanted potential barrier in the overflow control gate when ions are implanted into the sensor portion. The imager is capable of easily controlling the amount of overflow. The sensor portion takes the hole accumulation diode (HAD) sensor structure. A potential barrier is created in the overflow control gate by ion implantation. A potential difference created between the overflow control gate and the sensor portion is determined by the amount of ions implanted. A DC voltage V.sub.D applied to the overflow drain is variable. The potential difference is adjusted by varying the DC voltage V.sub.D. Thus, elements of the imager are uniform in potential barrier.

摘要翻译： 公开了一种固态成像器，用于当将离子注入传感器部分时，防止溢出控制栅中的不希望的势垒。 成像器能够容易地控制溢出量。 传感器部分采用空穴积聚二极管（HAD）传感器结构。 通过离子注入在溢流控制栅中产生势垒。 在溢出控制栅极和传感器部分之间产生的电势差由植入的离子的量决定。 施加到溢流漏极的直流电压VD是可变的。 通过改变直流电压VD来调节电位差。 因此，成像器的元件在势垒上是均匀的。

公开(公告)号：US5539226A

公开(公告)日：1996-07-23

申请号：US476028

申请日：1995-06-07

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

摘要翻译： 一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷， 输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压， 栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端 栅极区域具有第二输出栅极电极 在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

公开(公告)号：US5206530A

公开(公告)日：1993-04-27

申请号：US749616

申请日：1991-08-19

申请人： Seiichi Kawamoto ,  Tadakuni Narabu

发明人： Seiichi Kawamoto ,  Tadakuni Narabu

IPC分类号： H01L27/148

CPC分类号： H01L27/14868

摘要： A charge transfer device has a plurality of registers which run parallel to each other and across which electrical charges are transferred. For efficient charge transfer across the registers, the transfer elecrtrode of one register and the transfer electrode of an adjacent register are arrayed in contiguity to each other and driven by different driving pulses and a deeper potential is provided in the signal charge receiving side than in the signal charge forwarding side. The registers are arrayed parallel to a sensor row constituted by a linear array of different color sensors and each handle signal charges of the respective colors. In this manner, the outputs from the registers are in the form of the separate color signals to prevent color mixing.

摘要翻译： 电荷转移装置具有多个彼此平行并且传送电荷的寄存器。 为了在寄存器之间进行高效的电荷转移，一个寄存器的转移电极和相邻寄存器的转移电极彼此相邻排列并由不同的驱动脉冲驱动，并且在信号电荷接收侧提供比在 信号电荷转发端。 寄存器平行于由不同颜色传感器的线性阵列构成的传感器行，并且每个处理各个颜色的信号电荷。 以这种方式，来自寄存器的输出是分开的颜色信号的形式，以防止混色。

公开(公告)号：US5831298A

公开(公告)日：1998-11-03

申请号：US825800

申请日：1997-04-02

申请人： Seiichi Kawamoto ,  Tadakuni Narabu

发明人： Seiichi Kawamoto ,  Tadakuni Narabu

IPC分类号： H01L27/148 ,  H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/376 ,  H01L29/768

CPC分类号： H01L27/14643 ,  H01L27/14654

摘要： There is disclosed a solid-state imager for preventing an unwanted potential barrier in the overflow control gate when ions are implanted into the sensor portion. The imager is capable of easily controlling the amount of overflow. The sensor portion takes the hole accumulation diode (HAD) sensor structure. A potential barrier is created in the overflow control gate by ion implantation. A potential difference created between the overflow control gate and the sensor portion is determined by the amount of ions implanted. A DC voltage V.sub.D applied to the overflow drain is variable. The potential difference is adjusted by varying the DC voltage V.sub.D. Thus, elements of the imager are uniform in potential barrier.

摘要翻译： 公开了一种固态成像器，用于当将离子注入传感器部分时，防止溢出控制栅中的不希望的势垒。 成像器能够容易地控制溢出量。 传感器部分采用空穴积聚二极管（HAD）传感器结构。 通过离子注入在溢流控制栅中产生势垒。 在溢出控制栅极和传感器部分之间产生的电势差由植入的离子的量决定。 施加到溢流漏极的直流电压VD是可变的。 通过改变直流电压VD来调节电位差。 因此，成像器的元件在势垒上是均匀的。

公开(公告)号：US5640028A

公开(公告)日：1997-06-17

申请号：US554344

申请日：1995-11-06

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

摘要翻译： 一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷， 输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压， 栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端 栅极区域具有第二输出栅极电极 在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。

公开(公告)号：US5536956A

公开(公告)日：1996-07-16

申请号：US487887

申请日：1995-06-07

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device formed on a semiconductor substrate comprising: a charge transfer section formed on the semiconductor substrate for transferring charges, a floating gate having a floating gate diffusion layer formed on the semiconductor substrate for accumulating the charges transferred from the charge transfer section, an output gate section formed between the charge transfer section and the floating gate on the semiconductor substrate, and a charge detecting circuit electrically connected to the floating gate for outputting a voltage corresponding to the amount of the charges accumulated in the floating gate diffusion layer, the output gate section having a first output gate region adjacent to the charge transfer means and a second output gate region adjacent to the floating gate diffusion layer, the first output gate region having a first output gate electrode formed thereon with an insulating film therebetween, the second output gate region having a second output gate electrode formed thereon with an insulating film therebetween, a dc voltage being applied to the gate electrode, and an output voltage being applied to the second output gate electrode from the charging detecting circuit.

摘要翻译： 一种形成在半导体衬底上的电荷转移装置，包括：形成在半导体衬底上用于转移电荷的电荷转移部分，形成在半导体衬底上的浮置栅极扩散层的浮动栅极，用于累积从电荷转移部分转移的电荷， 输出栅极部分，形成在半导体衬底上的电荷转移部分和浮置栅极之间;以及电荷检测电路，电连接到浮置栅极，用于输出与在浮动栅极扩散层中累积的电荷量相对应的电压， 栅极部分具有与电荷转移装置相邻的第一输出栅极区域和与浮置栅极扩散层相邻的第二输出栅极区域，第一输出栅极区域具有形成在其间的绝缘膜的第一输出栅电极，第二输出端 栅极区域具有第二输出栅极电极 在其间形成有绝缘膜，其中直流电压被施加到栅电极，并且输出电压从充电检测电路施加到第二输出栅电极。