摘要:
An exposure apparatus includes an illumination optical system configured to illuminate a reticle, a projection optical system configured to project a pattern of the reticle onto a substrate, a polarization adjuster configured to independently adjust each polarization state of plural areas in an effective light source distribution used to illuminate the reticle, a polarization measurement unit configured to measure a polarization state of light that has passed the polarization adjuster, and a controller configured to independently control each polarization state of the plural areas via the polarization adjuster based on a measurement result of the polarization measurement unit.
摘要:
An exposure apparatus includes an illumination optical system configured to illuminate a reticle, a projection optical system configured to project a pattern of the reticle onto a substrate, a polarization adjuster configured to independently adjust each polarization state of plural areas in an effective light source distribution used to illuminate the reticle, a polarization measurement unit configured to measure a polarization state of light that has passed the polarization adjuster, and a controller configured to independently control each polarization state of the plural areas via the polarization adjuster based on a measurement result of the polarization measurement unit.
摘要:
An exposure apparatus including an illumination system which illuminates an original, and projection optics which project a pattern of the original illuminated by the illumination system onto a substrate. The apparatus includes an interferometer which forms an interference pattern including aberration information on the projection optics using a polarized light beam emitted from the illumination system, in which the interferometer is a common path interferometer in which two light beams forming interference pattern pass along a path in the projection optics, and a processor which calculates optical characteristics of the projection optics on the basis of the interference pattern formed by the interferometer. The illumination system including a polarization controller which sequentially generates at least three difference polarized light beams with respective polarization states different from each other. The processor separates first aberration and second aberration from wavefront aberration represented by the interference patterns sequentially formed by the interferometer using the at least three different polarized light beams, by calculating a data of the interference patterns, the first aberration being aberration which does not change dependent on a polarization state of polarized light beam entering the projection optics. The second aberration is aberration which changes dependent on the polarization state of the polarized light beam entering the projection optics.
摘要:
An exposure apparatus includes an interferometer which forms interference fringes including aberration information on projection optics using polarized light beams emitted from an illumination system, and a processor which calculates the optical characteristics of the projection optics on the basis of interference patterns sequentially formed by the interferometer using at least three different polarized light beams sequentially generated by a polarization controller. The optical characteristics include unpolarization aberration which does not depend on the polarization state of light entering the projection optics, and polarization aberration which depends on the polarization state of the light entering the projection optics.
摘要:
An exposure apparatus includes an illumination optical system for illuminating the reticle using the ultraviolet light from the light source, and a polarization measuring unit measuring the polarization state of the ultraviolet light, the polarization measuring unit including an optical unit for providing at least three different phase differences to the ultraviolet light that has passed at least part of the illumination optical system, a polarization element for providing a different transmittance in accordance with a polarization state of the ultraviolet light that has passed the optical unit, and an image pickup device for detecting a light intensity of the ultraviolet light that has passed the polarization element, the polarization measuring unit measuring the polarization state of the ultraviolet light that has passed the at least part of the illumination optical system based on a detection result of the image pickup device.
摘要:
An exposure apparatus includes an illumination optical system for illuminating the reticle using the ultraviolet light from the light source, and a polarization measuring unit measuring the polarization state of the ultraviolet light, the polarization measuring unit including an optical unit for providing at least three different phase differences to the ultraviolet light that has passed at least part of the illumination optical system, a polarization element for providing a different transmittance in accordance with a polarization state of the ultraviolet light that has passed the optical unit, and an image pickup device for detecting a light intensity of the ultraviolet light that has passed the polarization element, the polarization measuring unit measuring the polarization state of the ultraviolet light that has passed the at least part of the illumination optical system based on a detection result of the image pickup device.
摘要:
The present invention provides a method of determining a structure of an antireflection coating formed on a substrate as an exposure target of an exposure apparatus, the method comprising steps of calculating, an intensity distribution of light diffracted by an original, based on information of an effective light source formed on a pupil plane of a projection optical system, and information of an original pattern, extracting diffracted light having an intensity of not less than a threshold from the intensity distribution calculated in the calculating step, and determining the structure of the antireflection coating, formed on the substrate, such that a reflectance of the antireflection coating falls within a target range when an incident angle of the diffracted light, which has the intensity of not less than the threshold and is extracted in the extracting step, on the antireflection coating formed on the substrate is an input.
摘要:
A measurement method for measuring a shape of a target using an interference pattern includes the steps of converting a first interference pattern into a first shape of the target (S103 to S105), obtaining a second interference pattern at a position where the target moves in an optical axis direction of the reference surface (S107, S108), unwrapping the second interference pattern after aligning a phase of the first interference pattern with a phase of the second interference pattern (S109), converting the unwrapped second interference pattern into a second shape of the target (S110), determining whether or not the first shape of the target coincides with the second shape (S111), and calculating the shape of the target by adding the integral multiple of a wavelength of the light source to the unwrapped second interference pattern if the first shape does not coincide with the second shape (S112).
摘要:
An exposure method for exposing an image of a mask pattern onto a plate via a projection optical system. The method includes a step of illuminating one of a binary mask and an attenuated phase shifting mask, which has a contact hole pattern and an auxiliary pattern, by utilizing light from a light source and an illumination optical system so that the contact hole pattern can be resolved, but a resolution of the auxiliary pattern is restrained. The illuminating step uses an off-axis illumination that is polarized in a tangential direction when a value that is calculated by normalizing half the length of an interval between centers of the auxiliary pattern and the contact hole pattern that are adjacent to each other by λ/NA is 0.25×√{square root over (2)} or smaller, where λ is a wavelength of the light, and NA is a numerical aperture of the projection optical system at an image side.
摘要:
A two-dimensional transmission cross coefficient is obtained based on a function representing a light intensity distribution formed by an illumination apparatus on a pupil plane of the projection optical system and a pupil function of the projection optical system. Based on the two-dimensional transmission cross coefficient and data of a pattern on an object plane of the projection optical system, an approximate aerial image is calculated by using at least one of plural components of an aerial image on an image plane of the projection optical system. Data of a pattern of an original is produced based on the approximate aerial image.