公开(公告)号：US20150308902A1

公开(公告)日：2015-10-29

申请号：US14692883

申请日：2015-04-22

Applicant: Seiko Instruments Inc.

Inventor： Masakazu SUGIURA ,  Tsutomu TOMIOKA ,  Hideyuki SAWAI ,  Atsushi IGARASHI ,  Nao OTSUKA ,  Daisuke OKANO

IPC: G01K7/01 ,  H01L27/02 ,  G01K13/00

CPC classification number: G01K7/01 ,  G01K3/005 ,  H01L27/0255

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract translation: 提供了一种过热检测电路，其被配置为即使在高温也能够精确地检测半导体器件的温度，从而避免输出错误的检测结果。 过热检测电路包括：作为温度敏感元件的PN结元件; 配置为向PN结元件提供偏置电流的恒流电路; 比较器，被配置为比较在PN结元件处产生的电压和参考电压; 第二PN结元件，其构造成使得漏电流在高温下流过参考电压电路; 以及第三PN结元件，其构造成在高温下绕过恒流电路的漏电流。