公开(公告)号：US20130249525A1

公开(公告)日：2013-09-26

申请号：US13784139

申请日：2013-03-04

Applicant: SEIKO INSTRUMENTS INC.

Inventor： Nao OTSUKA ,  Kosuke TAKADA

IPC: G05F1/46

CPC classification number: G05F1/46 ,  G05F1/561

Abstract: Provided is a voltage reference circuit which is able to obtain high PSRR without a variation in power-supply voltage and an influence of noise. A voltage reference circuit for performing voltage-current conversion on forward voltages of PN junction elements and on a difference therebetween to generate a voltage so as not to depend on a temperature is constituted by an amplifier for controlling a temperature characteristic of a voltage of an output terminal, a source follower circuit for supplying a power to the amplifier, and a PMOS transistor which is controlled by the amplifier and which controls a current to flow into the PN junction elements.

Abstract translation: 提供了能够在电源电压变化和噪声的影响的情况下获得高PSRR的电压基准电路。 用于对PN结元件的正向电压进行电压 - 电流转换的电压参考电路和它们之间的差异以产生不依赖于温度的电压由用于控制输出电压的温度特性的放大器构成 端子，用于向放大器供电的源极跟随器电路和由放大器控制并且控制电流流入PN结元件的PMOS晶体管。

公开(公告)号：US20150309528A1

公开(公告)日：2015-10-29

申请号：US14693460

申请日：2015-04-22

Applicant: Seiko Instruments Inc.

Inventor： Atsushi IGARASHI ,  Nao OTSUKA

IPC: G05F5/00

CPC classification number: G05F5/00

Abstract: Provided is a power supply voltage monitoring circuit capable of accurately detecting a power supply voltage with a small circuit scale and low power consumption. The power supply voltage monitoring circuit includes: a signal output circuit configured to output a signal voltage representing saturation characteristics with respect to an increase in power supply voltage; and a signal voltage monitoring circuit configured to output a signal representing that the signal voltage of the signal output circuit is normal, the signal voltage monitoring circuit including: a PMOS transistor including a gate connected to an output terminal of the signal output circuit; a first constant current circuit connected to a drain of the PMOS transistor; and an inverter including an input terminal connected to the drain of the PMOS transistor.

Abstract translation: 提供一种能够以小的电路规模和低功耗精确地检测电源电压的电源电压监视电路。 电源电压监视电路包括：信号输出电路，被配置为输出表示相对于电源电压的增加的饱和特性的信号电压; 信号电压监视电路，被配置为输出表示信号输出电路的信号电压正常的信号，所述信号电压监视电路包括：PMOS晶体管，包括与所述信号输出电路的输出端连接的栅极; 连接到PMOS晶体管的漏极的第一恒流电路; 以及反相器，包括连接到PMOS晶体管的漏极的输入端子。

公开(公告)号：US20160064916A1

公开(公告)日：2016-03-03

申请号：US14837534

申请日：2015-08-27

Applicant: Seiko Instruments Inc.

Inventor： Masakazu SUGIURA ,  Atsushi IGARASHI ,  Nao OTSUKA

IPC: H02H3/08 ,  H02H3/12

CPC classification number: H02H3/08 ,  H02H3/12

Abstract: Provided is a semiconductor device including a detection circuit in which, even when a load short-circuit detection circuit and a load open-circuit detection circuit perform false detection due to a fluctuation in power supply voltage and the like, an output of a false detection result can be prevented. The detection circuit includes the load short-circuit detection circuit configured to detect a short circuit of a load, the load open-circuit detection circuit configured to detect an open circuit of the load, and a logic circuit configured to output output signals of the load short-circuit detection circuit and the load open-circuit detection circuit to an output terminal of the logic circuit, in which the logic circuit outputs a signal of a non-detection logic to the output terminal when the outputs of the load open-circuit detection circuit and the load short-circuit detection circuit are detection logics.

Abstract translation: 提供了一种包括检测电路的半导体器件，其中即使当负载短路检测电路和负载开路检测电路由于电源电压等的波动而进行错误检测时，也可以输出错误检测 结果可以防止。 检测电路包括：负载短路检测电路，被配置为检测负载的短路;负载开路检测电路，被配置为检测负载的开路;以及逻辑电路，被配置为输出负载的输出信号 短路检测电路和负载开路检测电路连接到逻辑电路的输出端，逻辑电路在负载开路检测的输出端向输出端输出非检测逻辑信号 电路和负载短路检测电路都是检测逻辑。

公开(公告)号：US20150308902A1

公开(公告)日：2015-10-29

申请号：US14692883

申请日：2015-04-22

Applicant: Seiko Instruments Inc.

Inventor： Masakazu SUGIURA ,  Tsutomu TOMIOKA ,  Hideyuki SAWAI ,  Atsushi IGARASHI ,  Nao OTSUKA ,  Daisuke OKANO

IPC: G01K7/01 ,  H01L27/02 ,  G01K13/00

CPC classification number: G01K7/01 ,  G01K3/005 ,  H01L27/0255

Abstract: Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.

Abstract translation: 提供了一种过热检测电路，其被配置为即使在高温也能够精确地检测半导体器件的温度，从而避免输出错误的检测结果。 过热检测电路包括：作为温度敏感元件的PN结元件; 配置为向PN结元件提供偏置电流的恒流电路; 比较器，被配置为比较在PN结元件处产生的电压和参考电压; 第二PN结元件，其构造成使得漏电流在高温下流过参考电压电路; 以及第三PN结元件，其构造成在高温下绕过恒流电路的漏电流。