Abstract:
Provided is a semiconductor device including a detection circuit in which, even when a load short-circuit detection circuit and a load open-circuit detection circuit perform false detection due to a fluctuation in power supply voltage and the like, an output of a false detection result can be prevented. The detection circuit includes the load short-circuit detection circuit configured to detect a short circuit of a load, the load open-circuit detection circuit configured to detect an open circuit of the load, and a logic circuit configured to output output signals of the load short-circuit detection circuit and the load open-circuit detection circuit to an output terminal of the logic circuit, in which the logic circuit outputs a signal of a non-detection logic to the output terminal when the outputs of the load open-circuit detection circuit and the load short-circuit detection circuit are detection logics.
Abstract:
Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature.
Abstract:
Provided are a reference current generation circuit and a reference voltage generation circuit, which have improved response speed when power supply is activated or fluctuates. In order to reduce a load capacitance of an operational amplifier, a transistor for providing a current to a transistor pair having a common gate-source voltage is provided, and the operational amplifier controls an ON-state resistance of the transistor.
Abstract:
Provided is a voltage regulator capable of applying an optimal overshoot suppression unit depending on states. The voltage regulator includes: an amplifier for controlling an output transistor based on a voltage obtained by amplifying a difference between a divided voltage and a reference voltage; a first overshoot suppression unit for controlling a gate voltage of the output transistor, to thereby suppress overshoot of the output voltage; a second overshoot suppression unit for controlling an operating current of the amplifier, to thereby suppress the overshoot of the output voltage; and a control circuit. The control circuit is configured to turn on the first overshoot suppression unit immediately after the voltage regulator is powered on, and turn off the first overshoot suppression unit under a state in which the output voltage is stable.
Abstract:
A voltage regulator is provided which can suppress an occurrence of overshooting in an output voltage at the time of starting a power source with a source voltage or the like. The voltage regulator includes an error amplifier circuit, an overshooting control circuit that is connected to the gate of an output transistor, and an ON/OFF circuit that controls ON and OFF states of at least the error amplifier circuit. Here, the ON/OFF circuit controls the overshooting control circuit so as to turn on the output transistor when a predetermined time passes after at least the error amplifier circuit is turned on at the time of starting the voltage regulator.
Abstract:
Provided is a voltage regulator configured to suppress overshoot and undershoot so as to output a stabilized voltage. The voltage regulator includes: a high pass filter configured to detect a fluctuation in power supply voltage; a high pass filter configured to detect a fluctuation in output voltage; transistors connected in series, which are each configured to cause a current to flow in accordance with an output of corresponding one of the high pass filters; and a clamp circuit configured to clamp a drain voltage of one of the transistors connected in series. The voltage regulator controls a gate voltage of an output transistor based on a drain voltage of a transistor that includes a gate controlled by the drain voltage of the one of the transistors connected in series.
Abstract:
Provided is a power supply switching circuit capable of suppressing a load fluctuation such as undershoot that occurs at an output terminal at the time of power supply switching. The power supply switching circuit includes: a battery connected to the output terminal; a replica current generation circuit for generating a replica current that is proportional to a current flowing from the battery to the output terminal; a voltage regulator connected to the output terminal, the voltage regulator including a reference voltage circuit, an error amplifier circuit, an output transistor, and a voltage divider circuit; and a current mirror circuit for causing the replica current to flow through the output transistor of the voltage regulator.
Abstract:
Provided is a detection circuit configured to avoid erroneous detection that may occur immediately after a detection circuit is powered on. The detection circuit includes: an output transistor connected between a voltage input terminal and a voltage output terminal; and a load open-circuit detection circuit configured to detect an open circuit of a load connected to the voltage output terminal, in which an output circuit of the load open-circuit detection circuit includes a first transistor and a second transistor connected in series, the first transistor having a gate connected to the output transistor in common, the second transistor having a gate to which a signal indicating that the open-circuit of the load is detected, and in which the first transistor is in an off state when the output transistor is in an off state.
Abstract:
Provided is a voltage regulator capable of preventing an output voltage from being increased even when a leakage current flows in an output transistor. The voltage regulator includes a leakage current control circuit. The leakage current control circuit includes an NMOS transistor connected to an output terminal of the voltage regulator. When the output voltage of the voltage regulator increases due to the leakage current of the output transistor, the leakage current control circuit causes the leakage current to flow through the NMOS transistor, to thereby prevent an increase in output voltage.
Abstract:
Provided is a reference voltage circuit capable of adjusting an arbitrary output voltage to have arbitrary temperature characteristics. The reference voltage circuit includes: a reference current generating circuit configured to convert a difference between forward voltages of a plurality of PN junction elements into current to generate a first current; a current generating circuit configured to use the first current generated by the reference current generating circuit to generate a second current; and a voltage generating circuit including a first resistive element and a second resistive element, the first resistive element being configured to generate a first voltage having positive temperature characteristics when the first current flows through the first resistive element, the second resistive element being configured to generate a second voltage having negative temperature characteristics when the first current and the second current flow through the second resistive element. The reference voltage circuit outputs a reference voltage obtained by adding the first voltage to the second voltage.