公开(公告)号：US20160020035A1

公开(公告)日：2016-01-21

申请号：US14802326

申请日：2015-07-17

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Nobuhiro INOUE ,  Ryota TAJIMA ,  Kazutaka KURIKI ,  Mitsuhiro ICHIJO ,  Yoshikazu HIURA ,  Mai SUGIKAWA

IPC: H01G9/042 ,  H01M4/136 ,  H01M4/131 ,  H01M10/0525 ,  H01M4/134

CPC classification number: H01G11/30 ,  H01M4/0428 ,  H01M4/13 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/136 ,  H01M4/139 ,  H01M4/366 ,  H01M4/386 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/0427 ,  H01M10/0431 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/058 ,  H01M10/0585 ,  H01M10/425 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.

Abstract translation: 提供高容量的蓄电装置。 或者，提供具有优异的循环特性的蓄电装置。 或者，提供具有高充放电效率的蓄电装置。 或者，提供寿命长的蓄电装置。 在负极集电体上设置负极活性物质，负极活性物质层以第一层和第二层交替堆叠的方式形成。 第一层至少包括选自Si，Mg，Ca，Ga，Al，Ge，Sn，Pb，Sb，Bi，Ag，Zn，Cd，As，Hg和In中的一种元素。 第二层包括氧和与第一层中包含的元素相同的元素。

公开(公告)号：US20160056179A1

公开(公告)日：2016-02-25

申请号：US14824268

申请日：2015-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Yoshikazu HIURA ,  Mai SUGIKAWA

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L29/786 ,  H01L23/522

CPC classification number: H01L27/1259 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/8258 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×1017 atoms/cm3 and less than or equal to 1.0×1018 atoms/cm3.

Abstract translation: 半导体器件包括第一层，第一层上的第二层和第二层上的第三层。 第一层包括第一晶体管。 第三层包括第二晶体管。 第一晶体管的沟道形成区域包括单晶半导体。 第二晶体管的沟道形成区域包括氧化物半导体。 第二层包括第一绝缘膜，第二绝缘膜和导电膜。 导电膜具有电连接第一晶体管和第二晶体管的功能。 第一绝缘膜与导电膜接触并接触。 第二绝缘膜设置在第一绝缘膜上。 第二绝缘膜包括碳浓度大于或等于1.77×1017原子/ cm3且小于或等于1.0×1018原子/ cm3的区域。

公开(公告)号：US20160163874A1

公开(公告)日：2016-06-09

申请号：US15044465

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tadashi NAKANO ,  Mai SUGIKAWA ,  Kosei NODA

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/0684 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

公开(公告)号：US20150255617A1

公开(公告)日：2015-09-10

申请号：US14721510

申请日：2015-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tadashi NAKANO ,  Mai SUGIKAWA ,  Kosei NODA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L29/0684 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606

Abstract: A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

Abstract translation: 提供了一种其金属氧化物中的氧空位减小的具有稳定的电特性的半导体器件。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的第一金属氧化物膜，与第一金属氧化物膜接触的源电极和漏极，以及钝化膜 在源电极和漏电极上。 第一绝缘膜，第二金属氧化物膜和第二绝缘膜依次层叠在钝化膜中。