中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

35 records (took 0.025 seconds)

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160372492A1

    公开(公告)日：2016-12-22

    申请号：US15251375

    申请日：2016-08-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Yoshinori IEDA ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Takashi HAMOCHI ,  Kenichi OKAZAKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

    IPC: H01L27/12 ,  H01L27/06

    CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

    Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

    Abstract translation: 提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。 此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。 在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。 具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜 第一氮化物绝缘膜和包括氧化物半导体的晶体管。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150295061A1

    公开(公告)日：2015-10-15

    申请号：US14747262

    申请日：2015-06-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI

    IPC: H01L29/49 ,  H01L21/441 ,  H01L29/786 ,  H01L21/477 ,  H01L29/47 ,  H01L29/66 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/477 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

    Abstract: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

    Abstract translation: 目的在于提供具有良好电气特性的半导体器件。 使用具有小于6×1020原子/ cm3的氢浓度和大于或等于1×1020原子/ cm3的氟浓度的栅极绝缘层作为与形成沟道区的氧化物半导体层接触的栅极绝缘层， 从而可以减少从栅极绝缘层释放的氢的量，并且可以防止氢向氧化物半导体层的扩散。 此外，可以通过使用氟来消除存在于氧化物半导体层中的氢; 因此，可以降低氧化物半导体层中的氢含量。 因此，可以提供具有良好电特性的半导体器件。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150053975A1

    公开(公告)日：2015-02-26

    申请号：US14501965

    申请日：2014-09-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

    IPC: H01L29/786 ,  H01L29/51 ,  H01L29/24

    CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

    Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

    Abstract translation: 在具有栅极结构的晶体管中，栅电极层与其间插入有栅极绝缘层的沟道区域的氧化物半导体层重叠，当绝缘层中含有大量的氢时，氢扩散 由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。 本发明的目的是提供一种具有良好电特性的半导体器件。 与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。 使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

Patent Agency Ranking