公开(公告)号：US08648439B2

公开(公告)日：2014-02-11

申请号：US13865365

申请日：2013-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC: H01L29/06

CPC classification number: H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

Abstract translation: 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

公开(公告)号：US08928131B2

公开(公告)日：2015-01-06

申请号：US13961197

申请日：2013-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

IPC: H01L23/66 ,  H01L23/498

CPC classification number: H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

Abstract translation: 本发明的半导体器件包括晶体管，设置在晶体管上的绝缘层，通过开口部分电连接到晶体管的源极区域或漏极区域的第一导电层（对应于源极线或漏极线） 设置在所述绝缘层中的第一树脂层，设置在所述绝缘层和所述第一导电层上的第一树脂层，包含通过设置在所述第一树脂层中的开口部与所述第一导电层电连接的导电粒子的层和设置在所述第一树脂层上的基板 具有第二树脂层和用作天线的第二导电层。 在具有上述结构的半导体器件中，第二导电层与第一导电层电连接，其间含有导电粒子的层。 此外，第二树脂层设置在第一树脂层上。

公开(公告)号：US08610152B2

公开(公告)日：2013-12-17

申请号：US13688809

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Takahashi ,  Daiki Yamada ,  Yohei Monma ,  Hiroki Adachi ,  Shunpei Yamazaki

IPC: H01L33/00

CPC classification number: H01L31/0232 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1277 ,  H01L27/1462 ,  H01L31/02162 ,  H01L2224/11

Abstract: A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color.

Abstract translation: 提供了其中由外部应力引起的诸如裂纹，凹陷或凹痕的损伤减小的半导体器件。 此外，具有小厚度的半导体器件的产量增加。 半导体器件包括具有台阶侧表面的透光衬底，其宽度在台阶之上的部分中并且更接近一个表面的透光衬底小于在该阶梯下方的部分的透光衬底;设置在另一表面上的半导体元件层 以及覆盖透光性基板的一侧面和一部分的第一透光性树脂层和第二透光性树脂层的层叠体。 第一透光树脂层和第二透光树脂层中的一个具有彩色。