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    IONIC LIQUID, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE
    3.
    发明申请
    IONIC LIQUID, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE 有权
    离子液体，非电解电解质和电力存储装置

    公开(公告)号：US20130164610A1

    公开(公告)日：2013-06-27

    申请号：US13719542

    申请日：2012-12-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toru ITAKURA ,  Kyosuke Ito ,  Rie Yokoi (Matsubara) ,  Jun Ishikawa

    IPC: H01M10/0569 ,  H01M10/052

    CPC classification number: H01M10/0569 ,  H01M10/052 ,  H01M10/0568 ,  H01M2300/0045 ,  Y02E60/122

    Abstract: A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte.

    Abstract translation: 本发明的非水电解质包括具有一个以上取代基的第一脂环季铵阳离子的离子液体，具有与第一脂环族季铵阳离子的脂环族骨架相同的脂环族骨架的第二脂环族季铵阳离子， 和第一脂环季铵阳离子和第二脂环族季铵阳离子的抗衡阴离子和碱金属盐。 在第二脂环季铵阳离子中，与脂环族骨架中的氮原子结合的取代基之一是包含卤素元素的取代基。 在离子液体中，包含第二脂环族季铵阳离子的盐的量为每单位离子液体重量的1重量％以下，或小于等于0.8重量％，每单位重量的非水性 电解液

    Ionic liquid, nonaqueous electrolyte, and power storage device
    4.
    发明授权
    Ionic liquid, nonaqueous electrolyte, and power storage device 有权

    公开(公告)号：US10991984B2

    公开(公告)日：2021-04-27

    申请号：US15008487

    申请日：2016-01-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Toru Itakura ,  Kyosuke Ito ,  Rie Yokoi ,  Jun Ishikawa

    IPC: H01M10/0569 ,  H01M10/0568 ,  H01M10/052 ,  C25D3/44 ,  C07C275/02 ,  C07C275/06 ,  C25D3/66 ,  C07C233/05

    Abstract: A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte.

    Semiconductor device and manufacturing method thereof
    8.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08928131B2

    公开(公告)日：2015-01-06

    申请号：US13961197

    申请日：2013-08-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

    IPC: H01L23/66 ,  H01L23/498

    CPC classification number: H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

    Abstract translation: 本发明的半导体器件包括晶体管，设置在晶体管上的绝缘层，通过开口部分电连接到晶体管的源极区域或漏极区域的第一导电层（对应于源极线或漏极线） 设置在所述绝缘层中的第一树脂层，设置在所述绝缘层和所述第一导电层上的第一树脂层，包含通过设置在所述第一树脂层中的开口部与所述第一导电层电连接的导电粒子的层和设置在所述第一树脂层上的基板 具有第二树脂层和用作天线的第二导电层。 在具有上述结构的半导体器件中，第二导电层与第一导电层电连接，其间含有导电粒子的层。 此外，第二树脂层设置在第一树脂层上。

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