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    Semiconductor Device
    1.
    发明申请
    Semiconductor Device 有权

    公开(公告)号：US20230132342A1

    公开(公告)日：2023-04-27

    申请号：US18084912

    申请日：2022-12-20

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

    IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/49 ,  H01L29/417

    摘要： In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210280697A1

    公开(公告)日：2021-09-09

    申请号：US17330589

    申请日：2021-05-26

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

    IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  H01L29/49 ,  H01L29/417

    摘要： In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

    Transistor and display device
    5.
    发明授权
    Transistor and display device 有权

    公开(公告)号：US12009432B2

    公开(公告)日：2024-06-11

    申请号：US17679413

    申请日：2022-02-24

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Hitoshi Kunitake ,  Yasuhiro Jinbo ,  Naoki Okuno ,  Masahiro Takahashi ,  Tomonori Nakayama

    IPC分类号： H01L29/786 ,  G09G3/32

    CPC分类号： H01L29/78603 ,  G09G3/32 ,  H01L29/78681 ,  G09G2300/0426

    摘要： A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11538928B2

    公开(公告)日：2022-12-27

    申请号：US17330589

    申请日：2021-05-26

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Tomonori Nakayama ,  Motoki Nakashima

    IPC分类号： H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L27/12

    摘要： In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.