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公开(公告)号：US12051726B2
公开(公告)日：2024-07-30
申请号：US17550646
申请日：2021-12-14
发明人： Shunpei Yamazaki , Daisuke Yamaguchi , Shinobu Kawaguchi , Yoshihiro Komatsu , Toshikazu Ohno , Yasumasa Yamane , Tomosato Kanagawa
CPC分类号： H01L29/26 , H10B12/0335 , H10B12/05 , H10B12/31
摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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公开(公告)号：US11955562B2
公开(公告)日：2024-04-09
申请号：US17889597
申请日：2022-08-17
IPC分类号： H01L29/786 , H01L29/49 , H01L29/51
CPC分类号： H01L29/7869 , H01L29/4966 , H01L29/517
摘要： A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.
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公开(公告)号：US11031506B2
公开(公告)日：2021-06-08
申请号：US16553287
申请日：2019-08-28
IPC分类号： H01L29/786 , H01L21/02 , H01L27/15 , H01L29/66
摘要： A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.
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公开(公告)号：US11935964B2
公开(公告)日：2024-03-19
申请号：US17278828
申请日：2019-10-01
IPC分类号： H01L21/00 , H01L21/8234 , H01L27/06 , H01L27/12 , H01L29/786
CPC分类号： H01L29/78693 , H01L21/823412 , H01L27/06 , H01L27/1225
摘要： A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.
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公开(公告)号：US11424369B2
公开(公告)日：2022-08-23
申请号：US17256341
申请日：2019-06-25
IPC分类号： H01L29/78 , H01L29/786 , H01L29/49 , H01L29/51
摘要： A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.
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公开(公告)号：US11211461B2
公开(公告)日：2021-12-28
申请号：US16693974
申请日：2019-11-25
发明人： Shunpei Yamazaki , Daisuke Yamaguchi , Shinobu Kawaguchi , Yoshihiro Komatsu , Toshikazu Ohno , Yasumasa Yamane , Tomosato Kanagawa
IPC分类号： H01L29/26 , H01L27/108
摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
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