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公开(公告)号：US08890159B2
公开(公告)日：2014-11-18
申请号：US13953428
申请日：2013-07-29
发明人： Shunpei Yamazaki , Masashi Tsubuku , Ryosuke Watanabe , Masashi Oota , Noritaka Ishihara , Koki Inoue
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/786 , H01L29/24
CPC分类号： H01L29/1054 , H01L22/14 , H01L29/247 , H01L29/42356 , H01L29/42384 , H01L29/78606 , H01L29/7869 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.
摘要翻译： 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。
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公开(公告)号：US09583570B2
公开(公告)日：2017-02-28
申请号：US14813408
申请日：2015-07-30
发明人： Shunpei Yamazaki , Masashi Tsubuku , Ryosuke Watanabe , Masashi Oota , Noritaka Ishihara , Koki Inoue
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/10 , H01L29/24 , H01L29/786 , H01L21/66 , H01L29/423
CPC分类号： H01L29/1054 , H01L22/14 , H01L29/247 , H01L29/42356 , H01L29/42384 , H01L29/78606 , H01L29/7869 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.
摘要翻译： 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。
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公开(公告)号：US09748401B2
公开(公告)日：2017-08-29
申请号：US14547285
申请日：2014-11-19
发明人： Masashi Tsubuku , Takayuki Inoue , Suzunosuke Hiraishi , Erumu Kikuchi , Hiromichi Godo , Shuhei Yoshitomi , Koki Inoue , Akiharu Miyanaga , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/40
CPC分类号： H01L29/7869 , H01L29/408
摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1
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公开(公告)号：US09123573B2
公开(公告)日：2015-09-01
申请号：US14527076
申请日：2014-10-29
发明人： Shunpei Yamazaki , Masashi Tsubuku , Ryosuke Watanabe , Masashi Oota , Noritaka Ishihara , Koki Inoue
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/10 , H01L29/24 , H01L29/786 , H01L21/66 , H01L29/423
CPC分类号： H01L29/1054 , H01L22/14 , H01L29/247 , H01L29/42356 , H01L29/42384 , H01L29/78606 , H01L29/7869 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.
摘要翻译： 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。
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