公开(公告)号：US20170301769A1

公开(公告)日：2017-10-19

申请号：US15583211

申请日：2017-05-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Setsuo Nakajima ,  Yasuyuki ARAI

IPC分类号： H01L29/51 ,  H01L29/49 ,  H01L27/12 ,  G02F1/1345 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362

CPC分类号： H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

摘要： In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

公开(公告)号：US09640630B2

公开(公告)日：2017-05-02

申请号：US14719762

申请日：2015-05-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： G02F1/1345 ,  H01L29/51 ,  G02F1/1368 ,  H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362

CPC分类号： H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

摘要： In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

公开(公告)号：US09041875B2

公开(公告)日：2015-05-26

申请号：US14179787

申请日：2014-02-13

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G02F1/1345 ,  H01L29/49 ,  H01L27/12 ,  G02F1/1362

CPC分类号： H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

摘要： In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

摘要翻译： 在半导体装置中，由反无交错型TFT构成的无机材料形成的第一层间绝缘层，形成在第一层间绝缘层上的由有机材料构成的第二层间绝缘层和与第一层间绝缘层形成的像素电极 第二层间绝缘层设置在基板上，并且在基板的端部上设置与另一基板的布线电连接的输入端子部。 输入端子部分包括由与栅电极相同的材料制成的第一层和由与像素电极相同的材料制成的第二层。 利用这种结构，光刻方法中使用的光掩模的数量可以减少到5个。

公开(公告)号：US20140160390A1

公开(公告)日：2014-06-12

申请号：US14179787

申请日：2014-02-13

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Setsuo Nakajima ,  Yasuyuki Arai

IPC分类号： G02F1/1368

CPC分类号： H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

摘要： In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

摘要翻译： 在半导体装置中，由反无交错型TFT构成的无机材料形成的第一层间绝缘层，形成在第一层间绝缘层上的由有机材料构成的第二层间绝缘层和与第一层间绝缘层形成的像素电极 第二层间绝缘层设置在基板上，并且在基板的端部上设置与另一基板的布线电连接的输入端子部。 输入端子部分包括由与栅电极相同的材料制成的第一层和由与像素电极相同的材料制成的第二层。 利用这种结构，光刻方法中使用的光掩模的数量可以减少到5个。