公开(公告)号：US09653523B2

公开(公告)日：2017-05-16

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki Senda ,  Masataka Nakada ,  Takayuki Abe ,  Koji Kusunoki ,  Hideaki Shishido

IPC: H01L27/32 ,  G06F3/044 ,  H01L51/52 ,  G06F3/045 ,  G06F3/041 ,  G06F15/02 ,  H01L51/00

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

公开(公告)号：US11690243B2

公开(公告)日：2023-06-27

申请号：US17067148

申请日：2020-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Takayuki Abe ,  Naoyuki Senda

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L51/0097 ,  H01L51/524 ,  H01L51/5237 ,  H01L51/5243 ,  H01L27/323 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US09960213B2

公开(公告)日：2018-05-01

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki Senda ,  Masataka Nakada ,  Takayuki Abe ,  Koji Kusunoki ,  Hideaki Shishido

IPC: H01L27/32 ,  G06F3/044 ,  H01L51/52 ,  G06F3/045 ,  G06F3/041 ,  G06F15/02 ,  H01L51/00

CPC classification number: H01L27/323 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G06F15/0216 ,  H01L27/322 ,  H01L51/0097 ,  H01L51/5253 ,  H01L51/5284 ,  H01L2251/5338

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

公开(公告)号：US09899626B2

公开(公告)日：2018-02-20

申请号：US14632115

申请日：2015-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Takayuki Abe ,  Naoyuki Senda

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L27/323 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5243 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US09525011B2

公开(公告)日：2016-12-20

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki Senda ,  Masataka Nakada ,  Takayuki Abe ,  Koji Kusunoki ,  Hideaki Shishido

IPC: H01L27/32 ,  G06F3/044 ,  H01L51/52 ,  H01L51/00 ,  G06F15/02 ,  G06F3/041 ,  G06F3/045

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

公开(公告)号：US09735163B2

公开(公告)日：2017-08-15

申请号：US14473224

申请日：2014-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Abe ,  Yasuyuki Takahashi

IPC: H01L29/76 ,  H01L27/112 ,  H01L23/498 ,  H01L23/522 ,  H01L27/105 ,  H01L49/02 ,  H01L29/94 ,  H01L23/00 ,  H01L27/12 ,  H01L23/525 ,  H01L23/532 ,  H01L23/66 ,  H01L27/06

CPC classification number: H01L27/11206 ,  H01L23/49833 ,  H01L23/4985 ,  H01L23/49855 ,  H01L23/5227 ,  H01L23/5252 ,  H01L23/53257 ,  H01L23/53271 ,  H01L23/5329 ,  H01L23/66 ,  H01L24/24 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/112 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/94 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

Abstract: A semiconductor device including a memory cell is provided. The memory cell comprises a transistor, a memory element and a capacitor. One of first and second electrodes of the memory element and one of first and second electrodes of the capacitor are formed by a same metal film. The metal film functioning as the one of first and second electrodes of the memory element and the one of first and second electrodes of the capacitor is overlapped with a film functioning as the other of first and second electrodes of the capacitor.

公开(公告)号：US09705003B2

公开(公告)日：2017-07-11

申请号：US14677071

申请日：2015-04-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takayuki Abe ,  Hideaki Shishido

IPC: H01L27/14 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78645 ,  H01L29/78648

Abstract: The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.

公开(公告)号：US20160163720A1

公开(公告)日：2016-06-09

申请号：US14473224

申请日：2014-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Abe ,  Yasuyuki Takahashi

IPC: H01L27/112 ,  H01L23/532 ,  H01L23/66 ,  H01L27/06 ,  H01L23/498 ,  H01L23/525 ,  H01L49/02

CPC classification number: H01L27/11206 ,  H01L23/49833 ,  H01L23/4985 ,  H01L23/49855 ,  H01L23/5227 ,  H01L23/5252 ,  H01L23/53257 ,  H01L23/53271 ,  H01L23/5329 ,  H01L23/66 ,  H01L24/24 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/112 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/94 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

Abstract: A semiconductor device including a memory cell is provided. The memory cell comprises a transistor, a memory element and a capacitor. One of first and second electrodes of the memory element and one of first and second electrodes of the capacitor are formed by a same metal film. The metal film functioning as the one of first and second electrodes of the memory element and the one of first and second electrodes of the capacitor is overlapped with a film functioning as the other of first and second electrodes of the capacitor.

Abstract translation: 提供了包括存储单元的半导体器件。 存储单元包括晶体管，存储元件和电容器。 存储元件的第一和第二电极之一和电容器的第一和第二电极中的一个由相同的金属膜形成。 用作存储元件的第一和第二电极中的一个的金属膜和电容器的第一和第二电极之一的金属膜与用作电容器的第一和第二电极中的另一个的膜重叠。

公开(公告)号：US10804487B2

公开(公告)日：2020-10-13

申请号：US15890399

申请日：2018-02-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Takayuki Abe ,  Naoyuki Senda

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.