公开(公告)号：US20130200367A1

公开(公告)日：2013-08-08

申请号：US13751767

申请日：2013-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Satoru SAITO ,  Terumasa IKEYAMA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/41733

Abstract: An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer.

公开(公告)号：US20160284855A1

公开(公告)日：2016-09-29

申请号：US15075775

申请日：2016-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Terumasa IKEYAMA ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/04 ,  H01L21/385 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/385 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device including a transistor using an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a first insulating layer is formed in contact with the oxide semiconductor layer, and an oxygen doping treatment is performed thereon, whereby the first insulating layer is made to contain oxygen in excess of the stoichiometric composition. The formation of the second insulating layer over the first insulating layer enables excess oxygen included in the first insulating layer to be supplied efficiently to the oxide semiconductor layer. Accordingly, the highly reliable semiconductor device with stable electric characteristics can be provided.

公开(公告)号：US20130187153A1

公开(公告)日：2013-07-25

申请号：US13746751

申请日：2013-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Terumasa IKEYAMA ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/385 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device including a transistor using an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a first insulating layer is formed in contact with the oxide semiconductor layer, and an oxygen doping treatment is performed thereon, whereby the first insulating layer is made to contain oxygen in excess of the stoichiometric composition. The formation of the second insulating layer over the first insulating layer enables excess oxygen included in the first insulating layer to be supplied efficiently to the oxide semiconductor layer. Accordingly, the highly reliable semiconductor device with stable electric characteristics can be provided.

Abstract translation: 提供了包括使用氧化物半导体的晶体管的高度可靠的半导体器件。 在包括具有氧化物半导体层的底栅晶体管的半导体器件中，形成与氧化物半导体层接触的第一绝缘层，并在其上进行氧掺杂处理，由此使第一绝缘层含有氧 过量的化学计量组成。 在第一绝缘层上形成第二绝缘层使得能够有效地向氧化物半导体层提供包括在第一绝缘层中的过量的氧。 因此，可以提供具有稳定电特性的高度可靠的半导体器件。

公开(公告)号：US20150162451A1

公开(公告)日：2015-06-11

申请号：US14623086

申请日：2015-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Satoru SAITO ,  Terumasa IKEYAMA

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733

Abstract: An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer.

Abstract translation: 本发明的一个实施例的目的是通过给包括氧化物半导体膜的晶体管提供稳定的电特性来提供高度可靠的半导体器件。 半导体器件包括：衬底上的栅极电极层，栅极电极层上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜;设置在氧化物半导体膜上方的与电极层重叠的漏电极层， 以及源电极层，设置为覆盖氧化物半导体膜的外边缘部分。 漏电极层的外缘部位于比栅电极层的外缘部更内侧。

公开(公告)号：US20130164899A1

公开(公告)日：2013-06-27

申请号：US13721972

申请日：2012-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Terumasa IKEYAMA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02365 ,  G02F1/1368 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/4908 ,  H01L29/66477 ,  H01L29/7869

Abstract: A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics.

Abstract translation: 制造其中包含氧化物半导体膜的晶体管具有稳定的电特性的高度可靠的半导体器件。 在包括具有底栅结构的反交错晶体管并且设置在具有绝缘表面的衬底上的半导体器件中，至少第一栅极绝缘膜和第二栅极绝缘膜设置在栅极电极层和第二栅极绝缘膜之间， 氧化物半导体膜，在450℃以上，优选650℃以上的温度进行热处理，然后形成氧化物半导体膜。 通过在形成氧化物半导体膜之前在450℃以上的温度下进行热处理，可以减少导致劣化或者晶体管的电特性的变化的氢元素向氧化物半导体膜的扩散，因此 晶体管可以具有稳定的电气特性。