公开(公告)号：US11728163B2

公开(公告)日：2023-08-15

申请号：US17257071

申请日：2019-06-24

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Kazuki Tanemura ,  Shota Sambonsuge ,  Naoki Okuno

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC分类号： H01L21/02266 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02172 ,  H01L21/02293

摘要： A method for depositing a metal oxynitride film by epitaxial growth at a low temperature is provided. It is a method for manufacturing a metal oxynitride film, in which the metal oxynitride film is epitaxially grown on a single crystal substrate by a sputtering method using an oxide target with a gas containing a nitrogen gas introduced. The oxide target contains zinc, the substrate during the deposition of the metal oxynitride film is higher than or equal to 80° C. and lower than or equal to 400° C., and the flow rate of the nitrogen gas is greater than or equal to 50% and lower than or equal to 100% of the total flow rate of the gas.

公开(公告)号：US11508850B2

公开(公告)日：2022-11-22

申请号：US17271716

申请日：2019-08-30

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Naoki Okuno ,  Tetsuya Kakehata ,  Hiroki Komagata ,  Yuji Egi

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/66

摘要： A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

公开(公告)号：US10944014B2

公开(公告)日：2021-03-09

申请号：US16513826

申请日：2019-07-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC分类号： H01L29/786 ,  H01L29/417

摘要： To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US10374097B2

公开(公告)日：2019-08-06

申请号：US15865308

申请日：2018-01-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC分类号： H01L29/786 ,  H01L29/417

摘要： To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09786495B2

公开(公告)日：2017-10-10

申请号：US14855648

申请日：2015-09-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Naoki Okuno ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka

IPC分类号： H01L21/02 ,  H01L21/66 ,  H01J37/32 ,  C23C14/08 ,  C23C14/58

CPC分类号： H01L21/0234 ,  C23C14/08 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5853 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12

摘要： A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

公开(公告)号：US12009432B2

公开(公告)日：2024-06-11

申请号：US17679413

申请日：2022-02-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hitoshi Kunitake ,  Yasuhiro Jinbo ,  Naoki Okuno ,  Masahiro Takahashi ,  Tomonori Nakayama

IPC分类号： H01L29/786 ,  G09G3/32

CPC分类号： H01L29/78603 ,  G09G3/32 ,  H01L29/78681 ,  G09G2300/0426

摘要： A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

公开(公告)号：US11424369B2

公开(公告)日：2022-08-23

申请号：US17256341

申请日：2019-06-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Haruyuki Baba ,  Naoki Okuno ,  Yoshihiro Komatsu ,  Toshikazu Ohno

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51

摘要： A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

公开(公告)号：US10910359B2

公开(公告)日：2021-02-02

申请号：US16561501

申请日：2019-09-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Naoki Okuno ,  Kosei Nei ,  Hiroaki Honda ,  Naoto Yamade ,  Hiroshi Fujiki

IPC分类号： H01L27/02 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

摘要： A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US20150179803A1

公开(公告)日：2015-06-25

申请号：US14571981

申请日：2014-12-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

摘要： To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

摘要翻译： 提供具有高导通电流的晶体管。 半导体器件包括含有过量氧的第一绝缘体，在第一绝缘体上的第一氧化物半导体，第一氧化物半导体上的第二氧化物半导体，在第二氧化物半导体之上并且彼此分离的第一导体和第二导体 与第一氧化物半导体的侧表面接触的第三氧化物半导体，第二氧化物半导体的顶表面和侧表面，第一导体的顶表面和第二导体的顶表面，第二绝缘体 第三氧化物半导体以及与第二绝缘体和第三氧化物半导体相对的第二氧化物半导体的顶表面和侧表面的第三导体。 第一氧化物半导体具有比第三氧化物半导体更高的透氧性。

公开(公告)号：US12062723B2

公开(公告)日：2024-08-13

申请号：US17272400

申请日：2019-08-29

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Masahiro Takahashi ,  Naoki Okuno ,  Tomosato Kanagawa ,  Shota Mizukami

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66969

摘要： A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.