公开(公告)号：US20030183854A1

公开(公告)日：2003-10-02

申请号：US10395310

申请日：2003-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: H01L029/04

CPC classification number: H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

Abstract: An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

公开(公告)号：US20040178434A1

公开(公告)日：2004-09-16

申请号：US10793822

申请日：2004-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Toshihiko Saito

IPC: H03H009/00

CPC classification number: G02F1/13338 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/123 ,  G06F3/0412 ,  G06F3/044 ,  G09G3/36 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/13 ,  H01L27/3244 ,  H01L29/78621 ,  H01L29/78645

Abstract: As for a nullsystem on panelnull in which a control circuit and a driver circuit as well as a display device are integrally formed over a substrate such as a glass substrate, more sophistication is expected by fabricating an input unit over the same substrate. Input of a semiconductor device is generally performed by pushing or touching a button like input unit with fingers or the like. In that case, glass is often used for a counter substrate; however, it is difficult to form a button from glass and to provide it directly on the substrate due to the nature of the material. It is an object of the present invention to provide a semiconductor device at a lower price, in which the input operation can be performed without employing an external input unit. A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.

Abstract translation: 对于在诸如玻璃基板的基板上整体地形成控制电路和驱动电路以及显示装置的“面板上的系统”，通过在相同的基板上制造输入单元，期望更加复杂。 半导体器件的输入通常通过用手指等按压或触摸诸如输入单元的按钮来执行。 在这种情况下，玻璃通常用于相对基板; 然而，由于材料的性质，难以从玻璃形成按钮并且将其直接提供到基板上。 本发明的目的是提供一种价格较低的半导体器件，其中可以在不使用外部输入单元的情况下执行输入操作。 可变电容器由一对电极和位于基板之间的电极之间的电介质形成，并且通过用物理或电力改变可变电容器的电容来检测外部输入。 具体地说，在同一衬底上设置可变电容器和读出放大器，读出放大器读取可变电容器的电容变化，并根据输入将信号发送到控制电路。