公开(公告)号：US20040087110A1

公开(公告)日：2004-05-06

申请号：US10619074

申请日：2003-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC: H01L021/46 ,  H01L021/30

CPC classification number: H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

Abstract: A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410null C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

Abstract translation: 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US20010040655A1

公开(公告)日：2001-11-15

申请号：US09835693

申请日：2001-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yuugo Goto

IPC: G02F001/1333

CPC classification number: G02F1/133514 ,  G02F1/133512

Abstract: In a conventional liquid crystal display panel using a metallic film as a light shielding mask of a color filter, there arose a problem in that a parasitic capacitor with the other wiring is generated to often cause a delay in signal. Further, there arose a problem in that, if an organic film containing a black pigment is used as the light shielding film of the color filter, the manufacturing step thereof increases. In the present invention, lamination films of colored layers consisting of two layers (lamination film of a red-colored layer and a blue-colored layer, or lamination film of a red-colored layer and a green-colored layer) are formed on an opposing substrate as light shielding portions so as to overlap with TFTs on a device substrate without forming a light-shielding mask (black matrix).

Abstract translation: 在使用金属膜作为滤色器的遮光掩模的常规液晶显示面板中，存在产生其它布线的寄生电容器经常引起信号延迟的问题。 此外，存在如下问题：如果使用含有黑色颜料的有机膜作为滤色器的遮光膜，则其制造步骤增加。 在本发明中，形成由两层（红色层和蓝色层的层叠膜，红色层和绿色层的层叠膜）构成的着色层的层压膜 相对的基板作为遮光部分，以便在不形成遮光掩模（黑矩阵）的情况下与设备基板上的TFT重叠。

公开(公告)号：US20040164302A1

公开(公告)日：2004-08-26

申请号：US10781795

申请日：2004-02-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuyuki Arai ,  Akira Ishikawa ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yuko Tachimura

IPC: H01L029/04

CPC classification number: H01L27/1266 ,  G06K19/07749 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

Abstract: The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.

Abstract translation: 本发明提供了一种超薄薄膜集成电路和包括薄膜集成电路器件的薄膜集成电路器件。 因此，产品的设计不会被破坏，而由硅晶片形成的集成电路是厚的，并且在产品容器的表面上产生不规则性。 根据本发明的薄膜集成电路不同于由常规硅晶片形成的集成电路，包括半导体膜作为有源区（例如，薄膜晶体管中的沟道区）。 根据本发明的薄膜集成电路足够薄，即使当诸如卡或容器的产品配备有薄膜集成电路时，该设计也不会被破坏。

公开(公告)号：US20040132265A1

公开(公告)日：2004-07-08

申请号：US10740437

申请日：2003-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya Maruyama ,  Yumiko Ohno ,  Toru Takayama ,  Yuugo Goto ,  Shunpei Yamazaki

IPC: H01L021/46 ,  H01L021/30

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/3025

Abstract: The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.

Abstract translation: 本发明是用于容易地分离大面积的全层释放层的分离方法。 此外，本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。 一种分离方法，包括依次形成含有氢的金属膜，第一氧化物和半导体膜的步骤; 以及将载体接合到包含第一氧化物和半导体膜的剥离层，并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。 通过分离方法，进行热处理以扩散半导体膜中所含的氢，通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物 氧化物和第三氧化物，含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。

公开(公告)号：US20040099926A1

公开(公告)日：2004-05-27

申请号：US10704761

申请日：2003-11-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

IPC: H01L023/58

CPC classification number: H01L27/1266 ,  G02F1/1362 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/3127 ,  H01L27/1214 ,  H01L27/14683 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/326 ,  H01L2251/5338 ,  H05B33/04

Abstract: A semiconductor device that has the structure that is capable of preventing moisture, oxygen, or the like, from outside from penetrating, in addition to the structure that is being thin, lightweight, flexible and having a curbed surface. In the present invention, the structure that is thin, lightweight, flexible, and that has a curved surface, moreover, that is capable of preventing moisture, oxygen, or the like, from outside from penetrating is realized by means that a structure is formed in which a device formation layer is covered by a fluoroplastic film and by means that TFTs included in a device formation layer is formed of an island-like semiconductor film.

Abstract translation: 除了薄，轻，柔性并具有弯曲表面的结构之外，还具有能够防止水分，氧等从外部渗透的结构的半导体器件。 在本发明中，通过形成结构，实现了能够防止水分，氧等从外部渗透的，具有薄的，轻质的，柔性的，并且具有弯曲表面的结构 其中器件形成层被氟塑料膜覆盖，并且通过包括在器件形成层中的TFT由岛状半导体膜形成。

公开(公告)号：US20030217805A1

公开(公告)日：2003-11-27

申请号：US10438854

申请日：2003-05-16

Applicant: Semiconductor Energy Laboratory Co. , Ltd.

Inventor： Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno

IPC: B32B031/00

CPC classification number: H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

Abstract: An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.

Abstract translation: 本发明的目的是提供一种在短时间内将被剥离物转印到转印部件上而不会对层压体内被剥离对象造成损伤的方法。 另外，本发明的另一个目的是提供一种半导体器件的制造方法，其中将制造在衬底上的半导体元件转移到通常为塑料衬底的转印构件上。 该方法的特征在于包括：在基板上形成剥离层和待剥离物体; 通过双面胶带粘合要剥离的物体和支撑体; 通过使用物理方法剥离剥离层的物体，然后将被剥离物接合到转印体上; 并将支撑体和双面胶带从要剥离的物体上剥离。

公开(公告)号：US20040239827A1

公开(公告)日：2004-12-02

申请号：US10752574

申请日：2004-01-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: G02F001/136

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Abstract translation: 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US20040130020A1

公开(公告)日：2004-07-08

申请号：US10740422

申请日：2003-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Kuwabara ,  Toru Takayama ,  Yuugo Goto ,  Junya Maruyama ,  Yumiko Ohno ,  Shunpei Yamazaki

IPC: H01L029/93

CPC classification number: H01L25/50 ,  H01L21/2007 ,  H01L21/76251 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83001 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06558 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2224/45099

Abstract: A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.

Abstract translation: 提供了一种用于制造低成本，小体积和高度集成的半导体器件的技术。 本发明的特征在于，通过使用半导体薄膜形成的半导体元件通过转印技术通过使用半导体衬底形成的半导体元件转印以制造半导体器件。 与以往的制造方法相比，能够实现成本低，吞吐量更高的半导体装置的批量生产，能够降低半导体装置的生产成本。

公开(公告)号：US20030183854A1

公开(公告)日：2003-10-02

申请号：US10395310

申请日：2003-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC: H01L029/04

CPC classification number: H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

Abstract: An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

公开(公告)号：US20030162312A1

公开(公告)日：2003-08-28

申请号：US10303080

申请日：2002-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC: H01L021/00 ,  H01L027/15 ,  H01L031/12 ,  H01L033/00 ,  H01L051/40 ,  H04B001/034

CPC classification number: H01L27/1266 ,  B60R1/00 ,  B60R11/0229 ,  B60R11/04 ,  B60R2011/004 ,  B60R2300/202 ,  B60R2300/802 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2227/323 ,  H01L2227/326

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Abstract translation: 为了提供其中将要剥离的层附着到具有曲面的基底的半导体器件及其制造方法，更具体地，涉及具有弯曲表面的显示器，更具体地说，具有如下的发光器件，其具有 附着到具有弯曲表面的基部的发光元件。 将包含使用层叠金属层或氮化物层的第一材料层的层叠体和作为氧化物层的第二材料层而设置在基板上的发光元件的剥离层转印到膜上， 然后将膜和要剥离的层弯曲，从而产生具有弯曲表面的显示器。