公开(公告)号：US20150276475A1

公开(公告)日：2015-10-01

申请号：US14678557

申请日：2015-04-03

Applicant: Shiro SAKAI ,  Seoul Viosys Co., Ltd.

Inventor： Shiro SAKAI ,  Won Chul SEO ,  Dae Won KIM

IPC: G01J3/02 ,  G01J3/42

CPC classification number: G01J3/0235 ,  B82Y20/00 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0259 ,  G01J3/36 ,  G01J3/42 ,  G01J2003/1213

Abstract: A spectrum detector includes a substrate, a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions, and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions. Each photodetector comprises different convex portions different from one another with respect to at least one of size, pitch, and height. The photodetectors have a relationship expressed by formula L·m=λ·cos θ/(2n), wherein L is a diameter of each convex portion, n is a refractive index between the air and each convex portion of the GaN layer, m is an integer or a reciprocal of an integer, λ is a wavelength of light transmitted through the plurality of convex portions of each photodetector, and θ is an incident angle of the light with respect to a surface of the p-GaN layer.

Abstract translation: 光谱检测器包括基板，形成在基板上的包括具有多个凸部的半导体的光电检测器和用于检测透过多个凸部的光的波长的波长检测电路。 每个光电检测器包括相对于尺寸，间距和高度中的至少一个而彼此不同的不同凸部。 光电检测器具有由公式L·m =λ·cosθ/（2n）表示的关系，其中L是每个凸部的直径，n是空气与GaN层的每个凸部之间的折射率，m 是整数的整数或倒数，λ是透过各光电检测器的多个凸部的光的波长， 是相对于p-GaN层的表面的光的入射角。

公开(公告)号：US20150102367A1

公开(公告)日：2015-04-16

申请号：US14550815

申请日：2014-11-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

IPC: H01L27/15 ,  H01L33/32

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane.

Abstract translation: 本发明涉及一种发光装置。 发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型或P型半导体层的侧表面 与水平面有20°至80°的斜率。 此外，发光器件包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，其中，一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括发光单元的P型半导体层的侧表面具有从20°至80°的斜率 一个水平面。