公开(公告)号：US20180175105A1

公开(公告)日：2018-06-21

申请号：US15898644

申请日：2018-02-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam LEE ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/62 ,  H01L33/08 ,  H01L27/32

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

公开(公告)号：US20150200342A1

公开(公告)日：2015-07-16

申请号：US14644994

申请日：2015-03-11

Applicant: Seoul Viosys Co., Ltd. ,  POSTECH Academy-Industry Foundation

Inventor： Jong Lam LEE ,  Jun Ho SON ,  Hak Ki YU

IPC: H01L33/58 ,  H01L33/00

CPC classification number: H01L33/58 ,  H01L33/007 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0058

Abstract: A method for fabricating a light emitting device, the method including forming a semiconductor stack structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, on a substrate, and forming a refractive index adjustment layer on the first semiconductor layer. The refractive index of the refractive index adjustment layer is smaller than the refractive index of the first semiconductor layer. Refractive indices of the first semiconductor layer and each layer disposed on the first semiconductor layer sequentially decrease in a direction extending away from the first semiconductor layer.

Abstract translation: 一种制造发光器件的方法，所述方法包括在衬底上形成包括第一半导体层，第二半导体层和设置在其间的有源层的半导体堆叠结构，并且在所述第一半导体上形成折射率调节层 层。 折射率调节层的折射率小于第一半导体层的折射率。 设置在第一半导体层上的第一半导体层和各层的折射率在远离第一半导体层的方向上依次减小。

公开(公告)号：US20150102367A1

公开(公告)日：2015-04-16

申请号：US14550815

申请日：2014-11-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam LEE ,  Jae Ho LEE ,  Yeo Jin YOON ,  Eu Jin HWANG ,  Dae Won KIM

IPC: H01L27/15 ,  H01L33/32

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane.

Abstract translation: 本发明涉及一种发光装置。 发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型或P型半导体层的侧表面 与水平面有20°至80°的斜率。 此外，发光器件包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，其中，一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括发光单元的P型半导体层的侧表面具有从20°至80°的斜率 一个水平面。