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    UV LIGHT EMITTING DIODE
    3.
    发明申请
    UV LIGHT EMITTING DIODE 有权

    公开(公告)号：US20220367753A1

    公开(公告)日：2022-11-17

    申请号：US17743993

    申请日：2022-05-13

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Tae Gyun KIM ,  Seon Min BAE ,  Seom Geun LEE ,  Kyu Ho LEE

    IPC: H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

    Abstract: A UV light emitting diode includes a substrate having a plurality of holes surrounded by a flat surface, a first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A distance from the flat surface to the active layer is smaller than a distance from bottom surfaces of the plurality of holes to the active layer. The flat surface is in contact with the first conductivity type semiconductor layer.

    HIGH-POWER LIGHT-EMITTING DIODE AND LIGHT-EMITTING MODULE HAVING THE SAME
    4.
    发明申请
    HIGH-POWER LIGHT-EMITTING DIODE AND LIGHT-EMITTING MODULE HAVING THE SAME 审中-公开

    公开(公告)号：US20180351042A1

    公开(公告)日：2018-12-06

    申请号：US16100783

    申请日：2018-08-10

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Min JANG ,  Seon Min BAE ,  Jae Hee LIM ,  Chang Yeon KIM ,  Chae Hon KIM

    IPC: H01L33/32 ,  H01L33/20 ,  H01L33/06 ,  H01L33/40 ,  H01L33/62 ,  H01L33/64

    Abstract: A light-emitting diode includes: a gallium nitride substrate; a first semiconductor layer disposed thereon; a mesa including a second semiconductor layer disposed on the first semiconductor layer and an intervening active layer; a first contact layer including an outer contact part in contact with the first semiconductor layer near an edge of the substrate and an inner contact part in contact with the first semiconductor layer within a region encompassed by the outer contact part; a second contact layer disposed on the mesa in contact with the second semiconductor layer; an upper insulation layer having first and second opening parts overlapping the first and second contact layers; and first and second electrode pads electrically connected to the first and second contact layers through the first and second opening parts, wherein the LED can be driven at 150 A/cm2 or more and has a maximum junction temperature of 180° C. or more.

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