PIXEL DEVICE AND DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20230369304A1

    公开(公告)日:2023-11-16

    申请号:US18139285

    申请日:2023-04-25

    Inventor: Jong Min JANG

    CPC classification number: H01L25/167 H01L27/15 H01L33/30 H01L25/162

    Abstract: A pixel device including a first light emitting device; a second light emitting device disposed laterally adjacent to the first light emitting device; a first cover layer covering the first light emitting device and the second light emitting device; and connection layers disposed on the first cover layer, and electrically connected to the first and second light emitting devices, in which the first light emitting device includes a first light emitting structure, and the second light emitting device includes a second light emitting structure and a third light emitting structure, in which the first light emitting structure emits light having a peak wavelength longer than peak wavelengths of light emitted from the second and third light emitting structures, and the second and third light emitting structures emit light having different peak wavelengths from each other.

    LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE

    公开(公告)号:US20230197913A1

    公开(公告)日:2023-06-22

    申请号:US18083212

    申请日:2022-12-16

    Abstract: A light emitting device and a light emitting module including the same are disclosed. The light emitting module may include: a circuit board; a plurality of light emitting devices disposed on the circuit board and emitting UV light; a plurality of wavelength conversion portions each disposed on a light emission surface of the light emitting device emitting UV light and converting a wavelength of light emitted from the light emitting device; and a molding portion covering the light emitting devices and the wavelength conversion portions formed on the circuit board. Each of the light emitting devices may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. One surface of the first semiconductor layer may correspond to the light emission surface of the light emitting device. In addition, at least one of the wavelength conversion portions may convert light emitted from the light emitting device into light having a different color than light converted by another wavelength conversion portion.

    LIGHT EMITTING DEVICE FOR DISPLAY AND LIGHT EMITTING PACKAGE HAVING THE SAME

    公开(公告)号:US20220359474A1

    公开(公告)日:2022-11-10

    申请号:US17873040

    申请日:2022-07-25

    Abstract: A light emitting device for a display including: a base layer; a first LED sub-unit, a second LED sub-unit, and a third LED sub-unit on the base layer; and a supporting layer covering the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, in which the third LED sub-unit is configured to emit light having a shorter wavelength than that of light emitted from the first LED sub-unit, and to emit light having a longer wavelength than that of light emitted from the second LED sub-unit, and a luminous intensity ratio of light emitted from the third LED sub-unit and the second LED sub-unit is configured to be about 6:1.

    UNIT PIXEL FOR LED DISPLAY AND LED DISPLAY APPARATUS HAVING THE SAME

    公开(公告)号:US20220336427A1

    公开(公告)日:2022-10-20

    申请号:US17719323

    申请日:2022-04-12

    Abstract: A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.

    LIGHT EMITTING DEVICE
    9.
    发明申请

    公开(公告)号:US20210091256A1

    公开(公告)日:2021-03-25

    申请号:US17110368

    申请日:2020-12-03

    Abstract: A method of manufacturing a light emitting device including forming first light emitting parts on a first substrate, the first light emitting part including a first n-type semiconductor layer and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first electrode and exposing a portion of the first n-type semiconductor layer, forming second light emitting parts on a second substrate, the second light emitting part including a second n-type semiconductor layer and a second mesa structure including a second active layer, a second p-type semiconductor layer, and a second electrode and exposing a portion of the second n-type semiconductor layer, attaching a first removable carrier onto the second light emitting parts and enclosing the second light emitting parts, removing the second substrate from the second light emitting parts, and bonding the second light emitting parts to the first light emitting parts.

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME

    公开(公告)号:US20200176636A1

    公开(公告)日:2020-06-04

    申请号:US16782969

    申请日:2020-02-05

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

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