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公开(公告)号:US20240222564A1
公开(公告)日:2024-07-04
申请号:US18608508
申请日:2024-03-18
Applicant: Seoul Viosys Co., Ltd.
Inventor: Jong Min JANG , Chae Hon KIM , Chang Youn KIM , Jae Hee LIM
IPC: H01L33/40 , H01L23/00 , H01L33/00 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/60
CPC classification number: H01L33/405 , H01L24/13 , H01L33/10 , H01L33/32 , H01L33/60 , H01L33/007 , H01L33/0093 , H01L33/20 , H01L33/22 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened surface through which light generated from an active layer is emitted; side surfaces defining the light exit surface; and a side reflection layer covering at least part of the side surfaces. The light exit surface is disposed over a first conductivity type semiconductor layer opposite to the ohmic reflection layer, all layers from the active layer to the light exit surface are formed of gallium nitride-based semiconductors, and a distance from the active layer to the light exit surface is 50 μm or more.
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公开(公告)号:US20240186363A1
公开(公告)日:2024-06-06
申请号:US18438063
申请日:2024-02-09
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Chang Yeon KIM
CPC classification number: H01L27/15 , H01L33/0093 , H01L33/0095 , H01L33/22 , H01L33/38 , H01L33/44 , H01L33/54 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0066
Abstract: A light emitting package including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a plurality of connection electrodes electrically connected to at least one of the first, second, and third LED sub-units, the connection electrodes having side surfaces and covering a side surface of at least one of the first, second, and third LED sub-units, a first passivation layer surrounding at least the side surfaces of the connection electrodes, an insulating layer having first and second opposed surfaces, with the first surface facing the LED sub-units, and a first electrode disposed on the first surface of the insulating layer and connected to at least one of the connection electrodes.
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公开(公告)号:US20230378412A1
公开(公告)日:2023-11-23
申请号:US18200400
申请日:2023-05-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Chang Yeon KIM
IPC: H01L33/62 , H01L33/24 , H01L33/56 , H01L25/075 , H01L33/00
CPC classification number: H01L33/62 , H01L33/24 , H01L33/56 , H01L25/0753 , H01L33/0008 , H01L25/0756
Abstract: A light emitting device including a first light emitter, a second light emitter, and a third light emitter, each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. An adhesive layer includes a first adhesive portion disposed between the first light emitter, and the second light emitter, and a second adhesive portion disposed between the second light emitter and the third light emitter, in which the second light emitter is disposed between the first light emitter and the third light emitter, and the first adhesive portion and the second adhesive portion are optically transmitting and connect adjacent light emitters.
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公开(公告)号:US20230369304A1
公开(公告)日:2023-11-16
申请号:US18139285
申请日:2023-04-25
Applicant: Seoul Viosys Co., Ltd.
Inventor: Jong Min JANG
CPC classification number: H01L25/167 , H01L27/15 , H01L33/30 , H01L25/162
Abstract: A pixel device including a first light emitting device; a second light emitting device disposed laterally adjacent to the first light emitting device; a first cover layer covering the first light emitting device and the second light emitting device; and connection layers disposed on the first cover layer, and electrically connected to the first and second light emitting devices, in which the first light emitting device includes a first light emitting structure, and the second light emitting device includes a second light emitting structure and a third light emitting structure, in which the first light emitting structure emits light having a peak wavelength longer than peak wavelengths of light emitted from the second and third light emitting structures, and the second and third light emitting structures emit light having different peak wavelengths from each other.
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公开(公告)号:US20230197913A1
公开(公告)日:2023-06-22
申请号:US18083212
申请日:2022-12-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Seom Geun LEE , Ki Ho PARK , Jong Min JANG , Chae Hon KIM , Sang Min KIM
IPC: H01L33/50 , H01L25/075 , H01L33/22 , H01L33/52 , H01L33/60
CPC classification number: H01L33/505 , H01L25/0753 , H01L33/22 , H01L33/52 , H01L33/60 , H01L33/0093
Abstract: A light emitting device and a light emitting module including the same are disclosed. The light emitting module may include: a circuit board; a plurality of light emitting devices disposed on the circuit board and emitting UV light; a plurality of wavelength conversion portions each disposed on a light emission surface of the light emitting device emitting UV light and converting a wavelength of light emitted from the light emitting device; and a molding portion covering the light emitting devices and the wavelength conversion portions formed on the circuit board. Each of the light emitting devices may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. One surface of the first semiconductor layer may correspond to the light emission surface of the light emitting device. In addition, at least one of the wavelength conversion portions may convert light emitted from the light emitting device into light having a different color than light converted by another wavelength conversion portion.
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公开(公告)号:US20220359474A1
公开(公告)日:2022-11-10
申请号:US17873040
申请日:2022-07-25
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Chang Yeon KIM
IPC: H01L25/075 , H01L33/62 , H01L23/00
Abstract: A light emitting device for a display including: a base layer; a first LED sub-unit, a second LED sub-unit, and a third LED sub-unit on the base layer; and a supporting layer covering the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, in which the third LED sub-unit is configured to emit light having a shorter wavelength than that of light emitted from the first LED sub-unit, and to emit light having a longer wavelength than that of light emitted from the second LED sub-unit, and a luminous intensity ratio of light emitted from the third LED sub-unit and the second LED sub-unit is configured to be about 6:1.
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公开(公告)号:US20220336427A1
公开(公告)日:2022-10-20
申请号:US17719323
申请日:2022-04-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor: Jong Min JANG , Sung Hyun LEE
IPC: H01L25/075 , H01L23/00 , H01L33/44 , H01L33/00
Abstract: A unit pixel including a first light emitting stack; a second light emitting stack disposed under the first light emitting stack, and having an area greater than that of the first light emitting stack; a third light emitting stack disposed under the second light emitting stack, and having an area greater than that of the second light emitting stack, in which at least one of the first through third light emitting stacks includes a side surface having an inclination angle within a range of about 30 degrees to about 70 degrees with respect to a first plane parallel to a top surface of the third light emitting stack.
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公开(公告)号:US20220085239A1
公开(公告)日:2022-03-17
申请号:US17539050
申请日:2021-11-30
Applicant: Seoul Viosys Co., Ltd.
Inventor: Chang Yeon KIM , Jong Hyeon CHAE , Chung Hoon LEE , Seong Gyu JANG , Jong Min JANG , Ho Joon LEE
Abstract: A light emitting diode (LED) pixel for a display including a light emitting structure configured to generate light and comprising at least one active layer, a first passivation layer surrounding side surfaces and an upper portion of the light emitting structure, the first passivation layer including via holes, and a plurality of via contacts filling the via holes and electrically connected to the light emitting structure, in which the via holes do not overlap the at least one active layer, and an area of the first passivation layer is greater than that of the light emitting structure in plan view.
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公开(公告)号:US20210091256A1
公开(公告)日:2021-03-25
申请号:US17110368
申请日:2020-12-03
Applicant: Seoul Viosys Co., Ltd.
Inventor: Jong Min JANG , Chang Yeon KIM , Myoung Hak YANG
Abstract: A method of manufacturing a light emitting device including forming first light emitting parts on a first substrate, the first light emitting part including a first n-type semiconductor layer and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first electrode and exposing a portion of the first n-type semiconductor layer, forming second light emitting parts on a second substrate, the second light emitting part including a second n-type semiconductor layer and a second mesa structure including a second active layer, a second p-type semiconductor layer, and a second electrode and exposing a portion of the second n-type semiconductor layer, attaching a first removable carrier onto the second light emitting parts and enclosing the second light emitting parts, removing the second substrate from the second light emitting parts, and bonding the second light emitting parts to the first light emitting parts.
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公开(公告)号:US20200176636A1
公开(公告)日:2020-06-04
申请号:US16782969
申请日:2020-02-05
Applicant: Seoul Viosys Co., Ltd.
Inventor: Jong Hyeon CHAE , Joon Sup LEE , Daewoong SUH , Won Young ROH , Min Woo KANG , Jong Min JANG , Se Hee OH , Hyun A KIM
IPC: H01L33/38
Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
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