BUFFER LAYER DEPOSITION METHODS FOR GROUP IBIIIAVIA THIN FILM SOLAR CELLS
    2.
    发明申请
    BUFFER LAYER DEPOSITION METHODS FOR GROUP IBIIIAVIA THIN FILM SOLAR CELLS 审中-公开
    IBIIIAVIA薄膜太阳能电池的缓冲层沉积方法

    公开(公告)号:US20120309125A1

    公开(公告)日:2012-12-06

    申请号:US13154273

    申请日:2011-06-06

    IPC分类号: H01L31/18

    摘要: The present invention provides methods for forming a buffer layer for Group IBIIIAVIA solar cells. The buffer layer is formed using chemical bath deposition and the layer is formed in steps. A first buffer layer is formed on the absorber and the first buffer layer is then treated using etching, oxidizing, annealing or some combination thereof. Subsequently a second buffer layer is then positioned on the treated surface. Additional buffer layers can be added following treatment of the previously deposited layer.

    摘要翻译: 本发明提供了用于形成IBIIIAVIA族太阳能电池的缓冲层的方法。 使用化学浴沉积形成缓冲层,并且步骤形成该层。 在吸收体上形成第一缓冲层,然后使用蚀刻,氧化,退火或其一些组合处理第一缓冲层。 随后,将第二缓冲层定位在经处理的表面上。 可以在先前沉积的层的处理之后添加附加的缓冲层。