公开(公告)号：US20050124158A1

公开(公告)日：2005-06-09

申请号：US10967101

申请日：2004-10-15

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundrum ,  Yosef Shacham-Diamand

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundrum ,  Yosef Shacham-Diamand

IPC分类号： C23C18/50 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76846 ,  C23C18/50 ,  C23C28/021 ,  C23C28/023 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76874

摘要： In one embodiment, a method for depositing a capping layer on a substrate surface containing a copper layer is provided which includes exposing the substrate surface to a zinc solution to form a zinc layer on the copper layer. The method further includes exposing the substrate surface to a silver solution to form a silver layer on the zinc layer, and depositing the capping layer on the silver layer by an electroless deposition process. A second silver layer may be formed on the capping layer, if desired. In another embodiment, a composition of a deposition solution to deposit a cobalt tungsten alloy is disclosed. The deposition solution includes CaWO4, a cobalt source in a range from about 50 mM to about 500 mM, a complexing agent in a range from about 100 mM to about 700 mM and a buffering agent in a range from about 50 mM to about 500 mM.

摘要翻译： 在一个实施例中，提供了一种用于在包含铜层的衬底表面上沉积覆盖层的方法，其包括将衬底表面暴露于锌溶液以在铜层上形成锌层。 该方法还包括将衬底表面暴露于银溶液以在锌层上形成银层，并通过无电沉积工艺将覆盖层沉积在银层上。 如果需要，可以在覆盖层上形成第二银层。 在另一个实施方案中，公开了沉积钴钨合金的沉积溶液的组合物。 沉积溶液包括CaWO 4 SO 4，钴源在约50mM至约500mM的范围内，络合剂在约100mM至约700mM的范围内，缓冲剂的范围 约50mM至约500mM。

公开(公告)号：US07064065B2

公开(公告)日：2006-06-20

申请号：US10967101

申请日：2004-10-15

申请人： Sergey D. Lopatin ,  Arulkumar Shanmugasundrum ,  Yosef Shacham-Diamand

发明人： Sergey D. Lopatin ,  Arulkumar Shanmugasundrum ,  Yosef Shacham-Diamand

IPC分类号： H01L21/44 ,  C23C28/02 ,  C25D3/46

CPC分类号： H01L21/76846 ,  C23C18/50 ,  C23C28/021 ,  C23C28/023 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76874

摘要： In one embodiment, a method for depositing a capping layer on a substrate surface containing a copper layer is provided which includes exposing the substrate surface to a zinc solution, exposing the substrate surface to a silver solution to form a silver layer thereon and depositing the capping layer on the silver layer by an electroless deposition process. A second silver layer may be formed on the capping layer, if desired. In another embodiment, a composition of a deposition solution useful for forming a cobalt tungsten alloy contains calcium tungstate, a cobalt source at a concentration within a range from about 50 mM to about 500 mM, a complexing agent at a concentration within a range from about 100 mM to about 700 mM, and a buffering agent at a concentration within a range from about 50 mM to about 500 mM.

摘要翻译： 在一个实施例中，提供了一种用于在包含铜层的衬底表面上沉积覆盖层的方法，其包括将衬底表面暴露于锌溶液，将衬底表面暴露于银溶液以在其上形成银层并沉积封盖 通过无电镀沉积工艺在银层上。 如果需要，可以在覆盖层上形成第二银层。 在另一个实施方案中，可用于形成钴钨合金的沉积溶液的组合物含有钨酸钙，浓度在约50mM至约500mM范围内的钴源，浓度在约 100mM至约700mM的缓冲剂和浓度为约50mM至约500mM的缓冲剂。

公开(公告)号：US06361422B1

公开(公告)日：2002-03-26

申请号：US09547189

申请日：2000-04-11

申请人： Gary Ettinger ,  Greg Wiese ,  Arulkumar Shanmugasundrum

发明人： Gary Ettinger ,  Greg Wiese ,  Arulkumar Shanmugasundrum

IPC分类号： B24B4702

CPC分类号： H01L21/67219 ,  B24B37/345 ,  H01L21/67313 ,  H01L21/68707

摘要： A semiconductor substrate processing method and apparatus, more specifically, a method and apparatus for polishing a substrate or semiconductor wafer in a polishing system. In one embodiment, the system includes one or more polishing modules, an input module, a first robot and a second robot that provides a compact polishing system that has a minimal tool footprint. The first robot is adapted to transfer the substrate to the input module, while the second robot is adapted to transfer the substrate between the input module and the one or more polishing modules. In another embodiment, the first and second robots have rotary actuators coupled to their grippers that enable the substrate to be orientated between a horizontal and vertical position. The input module is adapted to maintain the substrate in a vertical orientation. The vertical orientation of the substrates facilitates integration of a cleaning system that cleans the substrates while in the vertical orientation.

摘要翻译： 一种半导体衬底处理方法和装置，更具体地说，一种用于在抛光系统中抛光衬底或半导体晶片的方法和装置。 在一个实施例中，系统包括一个或多个抛光模块，输入模块，第一机器人和第二机器人，其提供具有最小工具占地面积的紧凑抛光系统。 第一机器人适于将基板传送到输入模块，而第二机器人适于在输入模块和一个或多个抛光模块之间传送基板。 在另一个实施例中，第一和第二机器人具有联接到它们的夹持器的旋转致动器，其使得基板能够在水平和垂直位置之间定向。 输入模块适于将衬底维持在垂直取向。 衬底的垂直取向促进了在垂直取向时清洁衬底的清洁系统的集成。