公开(公告)号：US20130164925A1

公开(公告)日：2013-06-27

申请号：US13601785

申请日：2012-08-31

Applicant: Duk Eui LEE ,  Seung Cheol LEE

Inventor： Duk Eui LEE ,  Seung Cheol LEE

IPC: H01L21/306

CPC classification number: H01L27/11521 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/7682

Abstract: A method of manufacturing a semiconductor memory device comprises forming a plurality of gate lines on a semiconductor substrate, forming an insulating layer on the gate lines, and performing a cleaning process using a surfactant-free cleaning solution having a viscosity of lower than 2 cP and an acidity of lower than 3 pH to remove residue from the surface of the insulating layer.

Abstract translation: 一种制造半导体存储器件的方法包括在半导体衬底上形成多个栅极线，在栅极线上形成绝缘层，并使用粘度低于2cP的无表面活性剂的清洁溶液进行清洁处理，以及 酸性低于3的pH值以除去绝缘层表面的残留物。

公开(公告)号：US20120214298A1

公开(公告)日：2012-08-23

申请号：US13398235

申请日：2012-02-16

Applicant: Su Hyun LIM ,  Seung Cheol LEE

Inventor： Su Hyun LIM ,  Seung Cheol LEE

IPC: H01L21/8239

CPC classification number: H01L27/11521 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/76224

Abstract: A method of manufacturing non-volatile memory devices includes forming a gate insulating layer and a first conductive layer over a semiconductor substrate, etching the first conductive layer and the gate insulating layer to expose part of the semiconductor substrate, forming trenches at a target depth of the semiconductor substrate by repeatedly performing a dry etch process for etching the exposed semiconductor substrate and a cleaning process for removing residues generated in the dry etch process, forming isolation layers within the trenches, forming a dielectric layer on a surface of the entire structure in which the isolation layers are formed, and forming a second conductive layer on the dielectric layer.

Abstract translation: 一种制造非易失性存储器件的方法包括在半导体衬底上形成栅极绝缘层和第一导电层，蚀刻第一导电层和栅极绝缘层以暴露部分半导体衬底，在目标深度处形成沟槽 通过重复执行用于蚀刻暴露的半导体衬底的干蚀刻工艺的半导体衬底和用于去除在干蚀刻工艺中产生的残留物的清洁工艺，在沟槽内形成隔离层，在整个结构的表面上形成介电层，其中 形成隔离层，并在电介质层上形成第二导电层。

公开(公告)号：US20090080305A1

公开(公告)日：2009-03-26

申请号：US12021144

申请日：2008-01-28

Applicant: Seung Cheol LEE

Inventor： Seung Cheol LEE

IPC: G11B20/18 ,  G11B7/00

CPC classification number: G11B19/127 ,  G11B2007/0006 ,  G11B2220/232 ,  G11B2220/2545 ,  G11B2220/2562 ,  G11B2220/2579

Abstract: A method for discriminating a type of disc. The method includes receiving a signal having at least first and second peak points generated by an optical beam reflected from a record layer of the disc, comparing amplitudes of the first and second peak points, and determining the type of the disc based on a result of the comparing step.

Abstract translation: 一种用于区分盘的类型的方法。 所述方法包括接收具有由从盘的记录层反射的光束产生的至少第一和第二峰值点的信号，比较第一和第二峰值点的振幅，以及基于第一和第二峰值的结果确定盘的类型 比较步骤。

公开(公告)号：US20090047520A1

公开(公告)日：2009-02-19

申请号：US12191801

申请日：2008-08-14

Applicant: Jae Kap LEE ,  Seung Cheol LEE ,  Phillip JOHN ,  Wook Seong LEE ,  Jeon Kook LEE

Inventor： Jae Kap LEE ,  Seung Cheol LEE ,  Phillip JOHN ,  Wook Seong LEE ,  Jeon Kook LEE

IPC: B32B9/00 ,  C23C16/26

CPC classification number: C30B29/02 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C23C16/01 ,  C23C16/26 ,  C30B25/02 ,  C30B29/04 ,  Y10S977/742 ,  Y10T428/30

Abstract: Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.

Abstract translation: 本发明公开了石墨烯混合材料和石墨烯混合材料的制备方法，所述石墨烯混合材料包括：具有在其表面上断开晶格面的矩阵; 以及沿着在基体表面上断开的晶格面外延生长的石墨烯层，使得石墨烯层垂直于矩阵定向，并且彼此间隔开并以相同形状层叠在基体上。 石墨烯混合材料可用于下一代半导体器件，生物传感器，电化学电极等领域。