公开(公告)号：US09200363B2

公开(公告)日：2015-12-01

申请号：US12512942

申请日：2009-07-30

Applicant: Jae-Kap Lee ,  So-Hyung Lee ,  Jae-Pyoung Ahn ,  Seung-Cheol Lee ,  Wook-Seong Lee

Inventor： Jae-Kap Lee ,  So-Hyung Lee ,  Jae-Pyoung Ahn ,  Seung-Cheol Lee ,  Wook-Seong Lee

IPC: C01B31/04 ,  C23C16/26 ,  B82Y30/00

CPC classification number: C23C16/26 ,  B82Y30/00 ,  C01B32/20 ,  C01P2002/78 ,  Y10T428/13 ,  Y10T428/261 ,  Y10T428/298 ,  Y10T428/2982

Abstract: Disclosed is AA′ graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA′ where alternate graphene layers exhibiting the AA′ stacking are translated by a half hexagon (1.23 Å). AA′ graphite has an interplanar spacing of about 3.44 Å larger than that of the conventional AB stacked graphite (3.35 Å) that has been known as the only crystal of pure graphite. This may allow the AA′ stacked graphite to have unique physical and chemical characteristics.

Abstract translation: 公开了具有石墨烯的新堆叠特征的AA'石墨及其制造方法。 石墨烯以AA'的顺序堆叠，其中呈现AA'层叠的交替石墨烯层被半六边形（1.23）平移。 AA'石墨具有比已知为纯石墨的唯一晶体的常规AB堆叠石墨（3.35埃）的面间距大约3.44埃。 这可能使AA的堆积石墨具有独特的物理和化学特性。

公开(公告)号：US08973526B2

公开(公告)日：2015-03-10

申请号：US11953348

申请日：2007-12-10

Applicant: Wook Seong Lee ,  Young Joon BaiK ,  Jong-Keuk Park ,  Gyu Weon Hwang ,  Jeung-hyun Jeong

Inventor： Wook Seong Lee ,  Young Joon BaiK ,  Jong-Keuk Park ,  Gyu Weon Hwang ,  Jeung-hyun Jeong

IPC: C23C14/34 ,  C23C16/00 ,  H01J37/34

CPC classification number: H01J37/3497 ,  H01J37/3435

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract translation: 等离子体沉积装置包括阴极组件，其包括阴极盘和支撑阴极盘的水冷阴极保持器，阳极组件，其包括水冷阳极保持器，安装在阳极保持器上用作阳极的衬底和 安装和支撑基板的基板支架，以及用于在真空状态下在阴极组件和阳极组件的相对表面之间施加电位差以形成原始气体的等离子体的反应器。 阴极盘使用自重和真空吸收力中的至少一种与阴极保持器热接触，以允许阴极盘的热膨胀。

公开(公告)号：US08597607B2

公开(公告)日：2013-12-03

申请号：US12545740

申请日：2009-08-21

Applicant: Jae-Kap Lee ,  So-Hyung Lee ,  Wook-Seong Lee

Inventor： Jae-Kap Lee ,  So-Hyung Lee ,  Wook-Seong Lee

IPC: C09C1/44

CPC classification number: C09C1/44 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/19 ,  C01B2204/04 ,  C01B2204/06 ,  C01P2002/77

Abstract: Disclosed is a method for fabricating graphene ribbons, comprising: preparing a graphitic material comprising stacked graphene helices; and cutting the graphitic material in a short form by applying energy to the graphitic material; and simultaneously or afterward, decomposing the graphitic material into short graphene ribbons. This method provides a mass production route to graphene ribbons.

Abstract translation: 公开了一种制造石墨烯带的方法，包括：制备包括堆积的石墨烯螺旋的石墨材料; 并通过向石墨材料施加能量来以短形式切割石墨材料; 同时或之后，将石墨材料分解成短的石墨烯带。 这种方法提供了石墨烯带的大规模生产路线。

公开(公告)号：US06786176B2

公开(公告)日：2004-09-07

申请号：US10122459

申请日：2002-04-15

Applicant: Wook-Seong Lee ,  Young Joon Baik ,  Kwang Yong Eun

Inventor： Wook-Seong Lee ,  Young Joon Baik ,  Kwang Yong Eun

IPC: C23C1600

CPC classification number: H01J37/32027 ,  H01J37/32009 ,  H01J37/32541

Abstract: A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of &mgr;m can be deposited on a flat or curved substrate and also on a Si wafer.

Abstract translation: 公开了一种金刚石膜沉积设备和方法，其中在不使用加热的灯丝阴极的情况下，在直径大于100mm的基板上形成均匀且大的等离子体，而不对其施加磁场，并且不使用耐镇流性。 这样形成的等离子体长时间保持稳定，使得直径大于4英寸，厚度超过数百个的金刚石厚膜可以沉积在平坦或弯曲的基板上以及Si晶片上。

公开(公告)号：US20090297854A1

公开(公告)日：2009-12-03

申请号：US12437838

申请日：2009-05-08

Applicant: Jae-Kap LEE ,  So-Hyung LEE ,  Seung-Cheol LEE ,  Jae-Pyoung AHN ,  Jeon-Kook LEE ,  Wook-Seong LEE

Inventor： Jae-Kap LEE ,  So-Hyung LEE ,  Seung-Cheol LEE ,  Jae-Pyoung AHN ,  Jeon-Kook LEE ,  Wook-Seong LEE

IPC: B32B9/00 ,  B01J19/12 ,  B82B1/00 ,  B82B3/00

CPC classification number: B01J3/006 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/0879 ,  B01J2219/0894 ,  C01B32/20 ,  C01B32/25 ,  C01B32/28 ,  C30B29/04 ,  C30B33/02 ,  Y10T428/30

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract translation: 通过将金刚石上的高温处理，金刚石表面转化成石墨烯，提供了一种用于AA堆叠的石墨烯 - 金刚石混合材料的制造方法。 根据本发明，如果各种类型的金刚石在氢气气氛中保持在稳定的石墨烯相（大约大于1200℃）的一定温度下，则将两个菱形{111}晶格面转换为一个石墨烯板 （2:1转化），由此将金刚石表面转化成一定厚度的石墨烯，从而制造AA堆叠的石墨烯 - 金刚石混合材料。

公开(公告)号：US20120082614A1

公开(公告)日：2012-04-05

申请号：US13316634

申请日：2011-12-12

Applicant: Jae-Kap LEE ,  So-Hyung LEE ,  Seung-Cheol LEE ,  Jae-Pyoung AHN ,  Jeon-Kook LEE ,  Wook-Seong LEE

Inventor： Jae-Kap LEE ,  So-Hyung LEE ,  Seung-Cheol LEE ,  Jae-Pyoung AHN ,  Jeon-Kook LEE ,  Wook-Seong LEE

IPC: C01B31/02 ,  B01J19/12 ,  B82Y40/00

CPC classification number: B01J3/006 ,  B01J19/088 ,  B01J2219/0809 ,  B01J2219/0879 ,  B01J2219/0894 ,  C01B32/20 ,  C01B32/25 ,  C01B32/28 ,  C30B29/04 ,  C30B33/02 ,  Y10T428/30

Abstract: There is provided a fabrication method for an AA stacked graphene-diamond hybrid material by converting, through a high temperature treatment on diamond, a diamond surface into graphene. According to the present invention, if various types of diamond are maintained at a certain temperature having a stable graphene phase (approximately greater than 1200° C.) in a hydrogen gas atmosphere, two diamond {111} lattice planes are converted into one graphene plate (2:1 conversion), whereby the diamond surface is converted into graphene in a certain thickness, thus to fabricate the AA stacked graphene-diamond hybrid material.

Abstract translation: 通过将金刚石上的高温处理，金刚石表面转化成石墨烯，提供了一种用于AA堆叠的石墨烯 - 金刚石混合材料的制造方法。 根据本发明，如果各种类型的金刚石在氢气气氛中保持在稳定的石墨烯相（大约大于1200℃）的一定温度下，则将两个菱形{111}晶格面转换为一个石墨烯板 （2:1转化），由此将金刚石表面转化成一定厚度的石墨烯，从而制造AA堆叠的石墨烯 - 金刚石混合材料。

公开(公告)号：US20100065892A1

公开(公告)日：2010-03-18

申请号：US12589622

申请日：2008-10-23

Applicant: Gyuweon Hwang ,  Wook Seong Lee ,  Jeung-hyun Jeong ,  Jong-Keuk Park ,  Young Joon Baik

Inventor： Gyuweon Hwang ,  Wook Seong Lee ,  Jeung-hyun Jeong ,  Jong-Keuk Park ,  Young Joon Baik

IPC: H01L29/78 ,  H01L21/336

CPC classification number: G01N27/4145 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape.

Abstract translation: 生物传感器包括形成在硅半导体衬底上的栅电介质，形成在栅电介质上的导电金刚石膜的栅电极，键合在用于检测生物分子的栅电极上的探针分子，以及形成在半导体衬底上的源/漏区 在栅电极的侧面。 栅电极是梳形或格子形状。

公开(公告)号：US20090127102A1

公开(公告)日：2009-05-21

申请号：US11953348

申请日：2007-12-10

Applicant: Wook Seong LEE ,  Young Joon BaiK ,  Jong-Keuk Park ,  Gyu Weon Hwang ,  Jeung-hyun Jeong

Inventor： Wook Seong LEE ,  Young Joon BaiK ,  Jong-Keuk Park ,  Gyu Weon Hwang ,  Jeung-hyun Jeong

IPC: C23C14/32

CPC classification number: H01J37/3497 ,  H01J37/3435

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract translation: 等离子体沉积装置包括阴极组件，其包括阴极盘和支撑阴极盘的水冷阴极保持器，阳极组件，其包括水冷阳极保持器，安装在阳极保持器上用作阳极的衬底和 安装和支撑基板的基板支架，以及用于在真空状态下在阴极组件和阳极组件的相对表面之间施加电位差以形成原始气体的等离子体的反应器。 阴极盘使用自重和真空吸收力中的至少一种与阴极保持器热接触，以允许阴极盘的热膨胀。

公开(公告)号：US5476693A

公开(公告)日：1995-12-19

申请号：US348110

申请日：1994-11-25

Applicant: Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Y. Eun

Inventor： Wook-Seong Lee ,  Young-Joon Baik ,  Kwang Y. Eun

IPC: C23C16/27 ,  B05D3/06 ,  C23C16/26

CPC classification number: C23C16/272 ,  Y10T428/30

Abstract: There is disclosed a method for depositing a diamond film on a substrate which utilizes high density direct current glow discharge at a glow-arc transition region to form plasma between a cathode and an anode in a reactor, wherein the cathode maintains its temperature at a range of 2,100 to 2,300.degree. C. and is composed of a plurality of U-shaped filaments which are aligned parallel to one another to form an array and each of which is made by bending a conductive wire.

Abstract translation: 公开了一种在衬底上沉积金刚石膜的方法，其在辉光弧过渡区域利用高密度直流辉光放电，以在反应器中在阴极和阳极之间形成等离子体，其中阴极保持其温度在一定范围内 为2100〜2300℃，并且由多个相互平行排列的U形长丝组成，形成阵列，并且各自通过弯曲导线制成。

公开(公告)号：US08334027B2

公开(公告)日：2012-12-18

申请号：US11833679

申请日：2007-08-03

Applicant: Wook-Seong Lee ,  Young-Joon Baik ,  Jeung-Hyun Jeong ,  Ki-Woong Chae

Inventor： Wook-Seong Lee ,  Young-Joon Baik ,  Jeung-Hyun Jeong ,  Ki-Woong Chae

IPC: H05H1/24

CPC classification number: C23C16/503 ,  C23C16/272 ,  Y10T428/268

Abstract: In the method for depositing a material in the absence of a positive column, a discharge is generated between a cathode and an anode disposed to face each other in a reaction chamber by applying a DC voltage therebetween, and introducing reaction gas into the reaction chamber, thereby depositing a material on a substrate mounted on the anode and serving as a part of the anode, wherein the deposition of the material on the substrate is performed under a state that a cathode glow and an anode glow exist in a form of thin layers coating respectively the surfaces of the cathode and the substrate, while a positive column does not exist or is so small as to be negligible.

Abstract translation: 在不存在正极柱时沉积材料的方法中，通过在反应室中施加直流电压，在反应室内彼此面对的阴极和阳极之间产生放电，并将反应气体引入反应室， 从而将材料沉积在安装在阳极上并用作阳极的一部分的衬底上，其中材料在衬底上的沉积在阴极辉光和阳极辉光以薄层涂层形式存在的状态下进行 分别是阴极和衬底的表面，而正柱不存在或太小以致可以忽略。