摘要:
Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
摘要:
Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要:
A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要:
A system and method for providing a device profile using a device identifier are disclosed. The system for providing a device profile using a device identifier includes: a mobile terminal that provides a device identifier having information regarding a hierarchical structure of a server and a model name; a plurality of servers that analyze the device identifier to recognize the lowermost server when the device identifier is queried, acquire a device profile corresponding to the device identifier through the lowermost server, and provide the acquired device profile; and an application server that connects to one of the plurality of servers, queries the device identifier, and is provided with a device profile corresponding to the device identifier. Device description of various mobile terminals can be more effectively managed and used in a mobile environment.
摘要:
An application installation method and apparatus using an application identifier (AI) are disclosed. The application installation method includes: transmitting, by a terminal, an AI inputted by a user and terminal information to an installation information providing server; acquiring, by the installation information providing server, installation information corresponding to the AI and the terminal information, and transmitting the acquired installation information; and connecting, by the terminal, to an installation file providing server according to the installation information, downloading an installation file corresponding to the AI, and installing an application corresponding to the AI.