公开(公告)号：US5561319A

公开(公告)日：1996-10-01

申请号：US298041

申请日：1994-08-30

申请人： Alexander H. Owens ,  Shahin Toutounchi ,  Abraham Yee ,  Michael Lyu

发明人： Alexander H. Owens ,  Shahin Toutounchi ,  Abraham Yee ,  Michael Lyu

IPC分类号： H01L23/31 ,  H01L29/06 ,  H01L29/40 ,  H01L29/34 ,  H01L21/265

CPC分类号： H01L29/408 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/3025 ,  Y10S438/953 ,  Y10S438/958

摘要： A CMOS integrated circuit structure is disclosed having a patterned nitride passivation layer, wherein the nitride is patterned such that it does not overlie the thin gate oxide portions of one or more of the MOS devices. When protection against the effects of external radiation is desired, the thin gate oxide areas of the PMOS devices are left uncovered by the patterned nitride passivation layer. When protection is desired against the effects of internally generated "hot electrons", the thin gate oxide areas of the NMOS devices are left uncovered by the patterned nitride passivation layer.

摘要翻译： 公开了具有图案化氮化物钝化层的CMOS集成电路结构，其中图案化氮化物使得其不覆盖一个或多个MOS器件的薄栅极氧化物部分。 当需要防止外部辐射的影响时，PMOS器件的薄栅极氧化物区域被图案化的氮化物钝化层留下。 当需要防止内部产生的“热电子”的影响时，NMOS器件的薄栅极氧化物区域被图案化的氮化物钝化层留下。

公开(公告)号：US5516731A

公开(公告)日：1996-05-14

申请号：US252723

申请日：1994-06-02

申请人： Shahin Toutounchi ,  Abraham Yee ,  Alexander H. Owens ,  Michael Lyu

发明人： Shahin Toutounchi ,  Abraham Yee ,  Alexander H. Owens ,  Michael Lyu

IPC分类号： H01L21/324 ,  H01L21/326 ,  H01L21/8238 ,  H01L21/477

CPC分类号： H01L21/326 ,  H01L21/324 ,  H01L21/8238 ,  Y10S438/953

摘要： A technique for improving the radiation hardness and hot-electron resistance of a CMOS integrated circuit is described whereby undesirable hydrogen ions may be vented through any holes, such as contact holes, in an overlying passivation layer by applying an elevated temperature and/or electrical bias to the integrated circuit die. The elevated temperature and electrical bias serve to accelerate the process by which hydrogen vents from the die. The elimination of unwanted hydrogen significantly reduces threshold shifts in the CMOS integrated circuit, providing greater radiation hardness and hot-electron resistance.

摘要翻译： 描述了一种用于提高CMOS集成电路的辐射硬度和热电子电阻的技术，其中不期望的氢离子可以通过施加升高的温度和/或电偏压而在覆盖的钝化层中通过任何孔（例如接触孔）排出 到集成电路管芯。 升高的温度和电气偏压有助于加速从模具排出氢气的过程。 消除不需要的氢显着降低了CMOS集成电路中的阈值偏移，提供更大的辐射硬度和热电阻。