公开(公告)号：US20170294554A1

公开(公告)日：2017-10-12

申请号：US15511750

申请日：2015-08-31

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshihiko TANI ,  Tetsuya HANAMOTO ,  Masanori WATANABE ,  Akihiro KURISU ,  Katsuji IGUCHI ,  Hiroyuki KASHIHARA ,  Tomoya INOUE ,  Toshiaki ASAI ,  Hirotaka WATANABE

IPC: H01L33/04 ,  H01L33/06 ,  H01L33/24 ,  H01L33/12 ,  H01L33/02 ,  H01L33/32

CPC classification number: H01L33/04 ,  H01L21/205 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

公开(公告)号：US20190006555A1

公开(公告)日：2019-01-03

申请号：US16101559

申请日：2018-08-13

Applicant: Sharp Kabushiki Kaisha

Inventor： Yoshihiko TANI ,  Tetsuya HANAMOTO ,  Masanori WATANABE ,  Akihiro KURISU ,  Katsuji IGUCHI ,  Hiroyuki KASHIHARA ,  Tomoya INOUE ,  Toshiaki ASAI ,  Hirotaka WATANABE

IPC: H01L33/04 ,  H01L33/24 ,  H01L21/205 ,  H01L33/32 ,  H01L33/02 ,  H01L33/12 ,  H01L33/06

CPC classification number: H01L33/04 ,  H01L21/205 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32

Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

公开(公告)号：US20150349197A1

公开(公告)日：2015-12-03

申请号：US14653703

申请日：2014-03-28

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masanori WATANABE ,  Satoshi KOMADA ,  Tomoya INOUE ,  Kosuke KAWABATA

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

Abstract translation: 本发明提供一种氮化物半导体发光元件，其依次包括第一n型氮化物半导体层，第二n型氮化物半导体层，n型电子注入层，发光层和p型 氮化物半导体层，其中第二n型氮化物半导体层的平均n型掺杂剂浓度为第一n型氮化物半导体层的平均n型掺杂剂浓度的0.53倍以下，平均n n型电子注入层的掺杂浓度为第二n型氮化物半导体层的平均n型掺杂剂浓度的1.5倍以上。