公开(公告)号：US20140345527A1

公开(公告)日：2014-11-27

申请号：US14452470

申请日：2014-08-05

Applicant: Sharp Kabushiki Kaisha

Inventor： Tohru SONODA ,  Shinichi KAWATO ,  Satoshi INOUE ,  Satoshi HASHIMOTO

IPC: C23C16/455

CPC classification number: C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

Abstract: A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

Abstract translation: 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US20160036008A1

公开(公告)日：2016-02-04

申请号：US14879090

申请日：2015-10-08

Applicant: Sharp Kabushiki Kaisha

Inventor： Tohru SONODA ,  Shinichi KAWATO ,  Satoshi INOUE ,  Satoshi HASHIMOTO

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L51/56 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  H01L27/3211 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/5253 ,  H05B33/04 ,  H05B33/10

Abstract: A vapor deposition device (50) in accordance with the present invention includes: a vapor deposition source (80) which has a plurality of injection holes (81) from which vapor deposition particles are to be injected towards a film formation substrate (60); a plurality of pipes (83a and 83b); a vapor deposition source crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80); and moving means for moving the film formation substrate (60) relative to the vapor deposition source (80). The pipes (83a and 83b) are connected to first and second sides of the vapor deposition source (80) on one end side and the other end side, respectively, of a line of the injection holes (81).

Abstract translation: 根据本发明的气相沉积装置（50）包括：气相沉积源（80），其具有多个喷射孔（81），气相沉积颗粒将从该注入孔向成膜基底（60）注入; 多个管道（83a和83b）; 用于将气相沉积颗粒供应到气相沉积源（80）的蒸镀源坩埚（82）; 以及用于相对于气相沉积源（80）移动成膜衬底（60）的移动装置。 管道（83a和83b）分别在喷射孔（81）的一行的一端侧和另一端侧连接到气相沉积源（80）的第一和第二侧。

公开(公告)号：US20140087450A1

公开(公告)日：2014-03-27

申请号：US14091187

申请日：2013-11-26

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Tohru SONODA ,  Shinichi KAWATO ,  Satoshi INOUE ,  Satoshi HASHIMOTO

IPC: C12M1/26

CPC classification number: C23C16/4401 ,  C12M33/00 ,  C23C14/564 ,  H01L31/186 ,  H01L51/0011

Abstract: A Film (7) is provided on at least a part of a surface of each of a vapor deposition preventing plate (3) and a shutter (4) of a vacuum chamber (5) on which surface vapor deposition particles are vapor-deposited, the film (7) being provided so as to be peeled off from the each of the vapor deposition preventing plate (3) and the shutter (4), and the film being made of a material differing in at least one of a melting point, a sublimation point, solubility in a given solvent, microbial biodegradability, and photodegradability from a material of which a vapor-deposited film that is formed on the film (7) is made.

公开(公告)号：US20140299058A1

公开(公告)日：2014-10-09

申请号：US14298844

申请日：2014-06-06

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Tohru SONODA ,  Shinichi KAWATO ,  Satoshi INOUE ,  Satoshi HASHIMOTO

IPC: C23C16/44

CPC classification number: C23C16/4401 ,  C12M33/00 ,  C23C14/564 ,  H01L31/186 ,  H01L51/0011

Abstract: A Film (7) is provided on at least a part of a surface of each of a vapor deposition preventing plate (3) and a shutter (4) of a vacuum chamber (5) on which surface vapor deposition particles are vapor-deposited, the film (7) being provided so as to be peeled off from the each of the vapor deposition preventing plate (3) and the shutter (4), and the film being made of a material differing in at least one of a melting point, a sublimation point, solubility in a given solvent, microbial biodegradability, and photodegradability from a material of which a vapor-deposited film that is formed on the film (7) is made.

Abstract translation: 在气相沉积颗粒被蒸镀的真空室（5）的气相沉积防止板（3）和快门（4）的每一个的表面的至少一部分上提供膜（7） 薄膜（7）设置成从每个防蒸镀板（3）和活门（4）上剥离，并且该薄膜由不同于熔点， 升华点，在给定溶剂中的溶解度，微生物生物降解性和由形成在膜（7）上的气相沉积膜的材料的光可降解性）。

公开(公告)号：US20180114953A1

公开(公告)日：2018-04-26

申请号：US15848635

申请日：2017-12-20

Applicant: Sharp Kabushiki Kaisha

Inventor： Tohru SONODA ,  Shinichi KAWATO ,  Satoshi INOUE ,  Satoshi HASHIMOTO

IPC: H01L51/56 ,  C23C14/56 ,  C23C14/54

CPC classification number: H01L51/56 ,  C23C14/243 ,  C23C14/26 ,  C23C14/542 ,  C23C14/562 ,  H01L51/0008

Abstract: A vapor deposition particle injection device of the present invention includes: vapor deposition particle generating sections and for generating vapor deposition particles in the form of vapor by heating vapor deposition materials and; and a nozzle section which is connected to the vapor deposition particle generating sections and has an injection hole from which the vapor deposition particles generated by the vapor deposition particle generating sections and are injected outward. The vapor deposition particle generating section has a smaller capacity for the vapor deposition material than the vapor deposition particle generating section.

公开(公告)号：US20160149135A1

公开(公告)日：2016-05-26

申请号：US15011398

申请日：2016-01-29

Applicant: Sharp Kabushiki Kaisha

Inventor： Tohru SONODA ,  Shinichi KAWATO ,  Satoshi INOUE ,  Satoshi HASHIMOTO

IPC: H01L51/00 ,  H01L51/56

CPC classification number: H01L51/0011 ,  C23C14/24 ,  C23C14/243 ,  C23C14/564 ,  H01L21/02104 ,  H01L51/001 ,  H01L51/56

Abstract: The vapor deposition particle injecting device (20) includes a crucible (22), a holder (21) having at least one injection hole (21a), and plate members (23 through 25) provided in the holder (21). The plate members (23 through 25) have respective openings (23a through 25a) corresponding to the injection hole (21a), and the plate members (23 through 25) are arranged away from each other in a direction perpendicular to the opening planes of the openings. The injection hole (21a) and the openings (23a through 25a) overlap each other in the plan view.