公开(公告)号：US20160163898A1

公开(公告)日：2016-06-09

申请号：US14956505

申请日：2015-12-02

Applicant: Sharp Kabushiki Kaisha

Inventor： Masatomi HARADA ,  Takeshi KAMIKAWA ,  Toshihiko SAKAI ,  Tokuaki KUNIYOSHI ,  Liumin ZOU

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0376

CPC classification number: H01L31/03529 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/0376 ,  H01L31/0747 ,  H01L31/20 ,  Y02E10/50

Abstract: A photovoltaic device is provided that prevents a short circuit in an p-n junction even if the distance between the electrodes on the n-type semiconductor strips and the electrodes on the p-type semiconductor strips is reduced. A photovoltaic device includes n-type amorphous semiconductor strips 102 and p-type amorphous semiconductor strips 102p provided on the back face of a semiconductor substrate 101. Separate electrodes 103 spaced apart from each other are provided on each semiconductor strip of at least one of the group of n-type amorphous semiconductor strips 102n and the group of p-type amorphous semiconductor strips 102p. A conductive part 302 is provided on the surfaces of the electrodes 103 and electrically connects the electrodes 103.

Abstract translation: 即使在n型半导体条上的电极和p型半导体条上的电极之间的距离减小的情况下，也提供防止p-n结中短路的光电器件。 光电器件包括设置在半导体衬底101的背面上的n型非晶半导体条102和p型非晶半导体条102p。彼此间隔开的分离电极103设置在至少一个 一组n型非晶半导体条带102n和一组p型非晶半导体条带102p。 导电部302设置在电极103的表面上并电连接电极103。

公开(公告)号：US20190044018A1

公开(公告)日：2019-02-07

申请号：US15759672

申请日：2016-08-30

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Tokuaki KUNIYOSHI ,  Kenichi HIGASHI ,  Takeshi KAMIKAWA ,  Masatomi HARADA ,  Toshihiko SAKAI ,  Kazuya TSUJINO ,  Liumin ZOU

IPC: H01L31/0747 ,  H01L31/075 ,  H01L31/0224

Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency.A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4. The reduced-thickness region TD(p) of the p-type amorphous semiconductor strip 5 has a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip 4.

公开(公告)号：US20170033252A1

公开(公告)日：2017-02-02

申请号：US15302644

申请日：2015-04-03

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Masatomi HARADA ,  Toshihiko SAKAI ,  Rihito SUGANUMA ,  Kazuya TSUJINO ,  Tokuaki KUNIYOSHI ,  Takeshi KAMIKAWA

IPC: H01L31/075 ,  H01L31/0376

CPC classification number: H01L31/075 ,  H01L31/022441 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×1017 cm−3 or more, and is lower than the dopant concentration of the first concentration layer.

Abstract translation: 提供了能够抑制p层或n层中的掺杂剂向相邻层的扩散的光电转换装置。 光电转换装置设置有硅衬底，形成在硅衬底的一个表面上的基本上本征的非晶层以及形成在本征非晶层上的第一导电非晶层。 第一导电非晶层包括层叠在第一浓度层上的第一浓度层和第二浓度层。 第二浓度层的掺杂浓度为8×1017cm-3以上，低于第一浓度层的掺杂浓度。

公开(公告)号：US20160268462A1

公开(公告)日：2016-09-15

申请号：US15031876

申请日：2014-08-29

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Kenji KIMOTO ,  Naoki KOIDE ,  Toshihiko SAKAI ,  Tokuaki KUNIYOSHI

IPC: H01L31/0384 ,  H01L31/0376 ,  H01L31/028

CPC classification number: H01L31/0384 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin films 11 to 1m and 21 to 2m−1, p-type non-crystalline thin films 31 to 3m, and n-type non-crystalline thin films 41 to 4m−1. The non-crystalline thin film 2 is configured of non-crystalline thin films 201 and 202 and is disposed in contact with the surface on the light incident side of the n-type monocrystalline silicon substrate 1. The non-crystalline thin film 201 is configured of a-Si, and the non-crystalline thin film 202 is configured of a-SiNx (0.78≦x≦1.03). The i-type non-crystalline thin films 11 to 1m and 21 to 2m−1 are disposed in contact with the rear surface of the n-type monocrystalline silicon substrate 1. The p-type non-crystalline thin films 31 to 3m are disposed in contact with the i-type non-crystalline thin films 11 to 1m. The n-type non-crystalline thin films 41 to 4m−1 are disposed in contact with the i-type non-crystalline thin films 21 to 2m−1.

Abstract translation: 光电转换元件100包括n型单晶硅衬底1，非晶体薄膜2，i型非晶体薄膜11至1m和21至2m-1，p型非晶薄膜31 至3μm，以及n型非晶质薄膜41〜4m-1。 非晶体薄膜2由非晶体薄膜201和202构成，并且与n型单晶硅衬底1的光入射侧的表面接触地设置。非晶体薄膜201被配置 的a-Si，非结晶薄膜202由a-SiNx（0.78≤x≤1.03）构成。 i型非结晶性薄膜11〜1m，21〜2m-1与n型单晶硅基板1的背面接触地配置。将p型非晶质薄膜31〜3m配置在 与i型非晶体薄膜11〜1m接触。 n型非晶质薄膜41〜4m-1配置成与i型非晶质薄膜21〜2m-1接触。