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8 条记录 (耗时 0.024 秒)

    Ink jet nozzle geometry selection by laser ablation of thin walls
    1.
    发明申请
    Ink jet nozzle geometry selection by laser ablation of thin walls 审中-公开
    通过激光消融薄壁喷墨喷嘴几何选择

    公开(公告)号：US20050285901A1

    公开(公告)日：2005-12-29

    申请号：US10880069

    申请日：2004-06-29

    申请人： Shelby Nelson ,  Eduardo Freire ,  John Andrews

    发明人： Shelby Nelson ,  Eduardo Freire ,  John Andrews

    IPC分类号： B41J2/04 ,  B41J2/16

    CPC分类号： B41J2/1634 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1631 ,  B41J2002/14475

    摘要： A novel method of fabricating the channel ends of an ink jet printhead: lithographically fabricating channels in photopolymer having the channel end blocked by a thin layer of photopolymer; sandwiching the photopolymer between two parallel substrates, one of which has an actuator for each channel; dicing through the substrates on a line perpendicular to the channels and leaving the channels and solid wall at the end of the channels intact; optionally coating the diced face including the polymer wall blocking the channel ends with a hydrophobic material; and forming nozzles in the end of the channels by laser ablating through the polymer layer at the end of the channel. Forming the nozzles after dicing and the optional coating prevents contamination of the interior of the printhead. The nozzles can be recessed from the diced edges of the substrate. Photolithographic formation of the end of the channel insures an accurate distance is maintained between the nozzle and the actuator. Improved jetting stability, directionality of the ejected drops, and drop size result from this novel fabrication method.

    摘要翻译： 一种制造喷墨打印头的通道端的新颖方法：光刻制造光聚合物中的通道，其通道端被光聚合物薄层阻挡; 将光聚合物夹在两个平行的基板之间，其中一个具有用于每个通道的致动器; 在垂直于通道的线上通过基底切割，并保留通道末端的通道和实心壁; 任选地将包含聚合物壁的切割面涂覆用疏水材料阻挡通道末端; 并且在通道的末端通过在通道末端的聚合物层激光烧蚀而在通道的末端形成喷嘴。 在切割之后形成喷嘴，并且可选的涂层防止了打印头内部的污染。 喷嘴可以从基板的切割边缘凹进。 通道端部的光刻形成确保喷嘴和致动器之间保持精确的距离。 改进的喷射稳定性，喷射液滴的方向性和液滴尺寸是由这种新颖的制造方法产生的。

    N-type semiconductor materials for thin film transistors
    2.
    发明申请
    N-type semiconductor materials for thin film transistors 有权
    用于薄膜晶体管的N型半导体材料

    公开(公告)号：US20070096084A1

    公开(公告)日：2007-05-03

    申请号：US11263111

    申请日：2005-10-31

    申请人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson ,  Jeffrey Carey ,  Wendy Ahearn

    发明人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson ,  Jeffrey Carey ,  Wendy Ahearn

    IPC分类号： H01L51/00 ,  C07D471/02

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  C09B57/08 ,  H01L51/0008 ,  H01L51/0053 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管，包括一层有机半导体材料，它包括一个四羧酸二酰亚胺萘系化合物，它具有连接到每个酰亚胺氮原子上的芳族部分，其中至少一个部分被至少一个给电子基团取代。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    Polymeric gate dielectrics for organic thin film transistors and methods of making the same
    3.
    发明申请
    Polymeric gate dielectrics for organic thin film transistors and methods of making the same 审中-公开
    用于有机薄膜晶体管的聚合物栅极电介质及其制造方法

    公开(公告)号：US20060214154A1

    公开(公告)日：2006-09-28

    申请号：US11088645

    申请日：2005-03-24

    申请人： Zhihao Yang ,  Diane Freeman ,  Amy Jasek ,  Shelby Nelson

    发明人： Zhihao Yang ,  Diane Freeman ,  Amy Jasek ,  Shelby Nelson

    IPC分类号： H01L29/786 ,  H01L21/84

    CPC分类号： H01L51/052 ,  H01L51/0052 ,  H01L51/0529 ,  H01L51/0545

    摘要： A thin film transistor comprises a layer of organic semiconductor material and spaced apart first and second contact means or electrodes in contact with said material. A multilayer dielectric comprises a first dielectric layer having a thickness of 200 nm to 500 nm, in contact with the gate electrode and a second dielectric layer in contact with the organic semiconductor material, and wherein the first dielectric layer comprise a continuous first polymeric material having a relatively higher dielectric constant less than 10 and the second dielectric layer comprises a continuous second non-fluorinated polymeric material having a relatively lower dielectric constant greater than 2.3. Further disclosed is a process for fabricating such a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 薄膜晶体管包括有机半导体材料层和间隔开的与所述材料接触的第一和第二接触装置或电极。 多层电介质包括与栅电极接触的厚度为200nm至500nm的第一电介质层和与有机半导体材料接触的第二电介质层，并且其中第一介电层包括具有 相对较高的介电常数小于10，第二介电层包括具有大于2.3的较低介电常数的连续的第二非氟化聚合材料。 进一步公开的是制造这种薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    Ion implantation with multiple concentration levels
    4.
    发明申请
    Ion implantation with multiple concentration levels 失效
    具有多重浓度水平的离子注入

    公开(公告)号：US20050245056A1

    公开(公告)日：2005-11-03

    申请号：US11171654

    申请日：2005-06-30

    申请人： Alan Raisanen ,  Shelby Nelson

    发明人： Alan Raisanen ,  Shelby Nelson

    IPC分类号： H01L21/225 ,  H01L21/266 ,  H01L21/336 ,  H01L21/04 ,  H01L21/425

    CPC分类号： H01L21/2253 ,  H01L21/266 ,  Y10S438/918 ,  Y10S438/944 ,  Y10S438/948

    摘要： A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.

    摘要翻译： 一种包括在其表面上提供具有掩模的半导体衬底的方法。 掩模包括不具有掩模元件的第一区域和具有多个掩模元件的第二区域。 多个掩模元件中的每一个具有等于第一长度的尺寸，第一长度小于掺杂剂的扩散长度的两倍。 该方法还包括用掺杂剂的离子轰击半导体衬底和掩模元件。 离子在第一区域中形成第一杂质浓度，在第二区域中形成第二杂质浓度。

    Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
    5.
    发明申请
    Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors 有权
    含氟N，N'-二芳基苝基四羧酸二酰亚胺化合物作为薄膜晶体管的N型半导体材料

    公开(公告)号：US20060131564A1

    公开(公告)日：2006-06-22

    申请号：US11015897

    申请日：2004-12-17

    申请人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    发明人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    IPC分类号： H01L29/08 ,  H01L29/04

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0067 ,  H01L51/0545 ,  H01L51/5048 ,  Y02E10/549 ,  Y02P70/521

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 一种薄膜晶体管包括一层有机半导体材料，它包括四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环系统，被一个或多个氟取代 包含组。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开的是用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
    8.
    发明申请
    N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
    N，N'-二（苯基烷基）取代的苝基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料

    公开(公告)号：US20060134823A1

    公开(公告)日：2006-06-22

    申请号：US11021739

    申请日：2004-12-21

    申请人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    发明人： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0053 ,  B82Y30/00 ,  C09B5/62 ,  H01L51/0545 ,  Y02E10/549

    摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    摘要翻译： 薄膜晶体管包括一层有机半导体材料，其包含四羧酸二酰亚胺3,4,9,10-苝基化合物，其具有连接到每个酰亚胺氮原子上的取代或未取代的苯基烷基。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。