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    NONVOLATILE STORAGE DEVICE
    1.
    发明申请
    NONVOLATILE STORAGE DEVICE 有权
    非易失存储器件

    公开(公告)号：US20120217464A1

    公开(公告)日：2012-08-30

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Nonvolatile storage device
    2.
    发明授权
    Nonvolatile storage device 有权
    非易失存储设备

    公开(公告)号：US08895952B2

    公开(公告)日：2014-11-25

    申请号：US13404678

    申请日：2012-02-24

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto ,  Kenji Aoyama ,  Shigeto Oshino ,  Kei Watanabe ,  Shinichi Nakao ,  Satoshi Ishikawa ,  Takeshi Yamaguchi

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/149

    摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.

    摘要翻译： 通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。 存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层， 在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛 电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

    Semiconductor memory device and writing method thereof
    3.
    发明授权
    Semiconductor memory device and writing method thereof 有权
    半导体存储器件及其写入方法

    公开(公告)号：US08379431B2

    公开(公告)日：2013-02-19

    申请号：US13043923

    申请日：2011-03-09

    申请人： Shigeki Kobayashi ,  Kazuhiko Yamamoto

    发明人： Shigeki Kobayashi ,  Kazuhiko Yamamoto

    IPC分类号： G11C11/00

    CPC分类号： G11C16/0466 ,  G11C16/10 ,  G11C16/3418

    摘要： A memory cell array includes memory transistors each including a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and a variable resistance film formed on the gate electrode and made of a variable resistance material having variable resistance and is configured by plural memory strings disposed with longer direction extending in a first direction and including plural series-connected memory transistors. Word lines are disposed with a longer direction extending in a second direction orthogonal to the first direction, and connected commonly to the gate electrodes of the plural memory transistors lined up in the second direction. A plate line is disposed to sandwich the variable resistance film with the gate electrode. First voltage terminals supply a certain voltage to first ends of the plural memory strings. Second voltage terminals supply a certain voltage to second ends of the plural memory strings.

    摘要翻译： 存储单元阵列包括存储晶体管，每个存储晶体管包括形成在半导体衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅极上的可变电阻膜，并且由可变电阻材料制成， 由沿着第一方向延伸的包括多个串联存储晶体管的长方向布置的多个存储器串构成。 字线沿着与第一方向正交的第二方向延伸的较长方向布置，并且共同连接到沿第二方向排列的多个存储晶体管的栅电极。 设置板线以与栅电极夹住可变电阻膜。 第一电压端子向多个存储器串的第一端提供一定电压。 第二电压端子向多个存储器串的第二端提供一定电压。

    SEMICONDUCTOR MEMORY DEVICE AND WRITING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND WRITING METHOD THEREOF 有权
    半导体存储器件及其写入方法

    公开(公告)号：US20110235395A1

    公开(公告)日：2011-09-29

    申请号：US13043923

    申请日：2011-03-09

    申请人： Shigeki KOBAYASHI ,  Kazuhiko Yamamoto

    发明人： Shigeki KOBAYASHI ,  Kazuhiko Yamamoto

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0466 ,  G11C16/10 ,  G11C16/3418

    摘要： A memory cell array includes memory transistors each including a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and a variable resistance film formed on the gate electrode and made of a variable resistance material having variable resistance and is configured by plural memory strings disposed with longer direction extending in a first direction and including plural series-connected memory transistors. Word lines are disposed with a longer direction extending in a second direction orthogonal to the first direction, and connected commonly to the gate electrodes of the plural memory transistors lined up in the second direction. A plate line is disposed to sandwich the variable resistance film with the gate electrode. First voltage terminals supply a certain voltage to first ends of the plural memory strings. Second voltage terminals supply a certain voltage to second ends of the plural memory strings.

    摘要翻译： 存储单元阵列包括存储晶体管，每个存储晶体管包括形成在半导体衬底上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和形成在栅极上的可变电阻膜，并且由可变电阻材料制成， 由沿着第一方向延伸的包括多个串联存储晶体管的长方向布置的多个存储器串构成。 字线沿着与第一方向正交的第二方向延伸的较长方向布置，并且共同连接到沿第二方向排列的多个存储晶体管的栅电极。 设置板线以与栅电极夹住可变电阻膜。 第一电压端子向多个存储器串的第一端提供一定电压。 第二电压端子向多个存储器串的第二端提供一定电压。

    Semiconductor memory device with resistance change film and method of manufacturing the same
    5.
    发明授权
    Semiconductor memory device with resistance change film and method of manufacturing the same 有权
    具有电阻变化膜的半导体存储器件及其制造方法

    公开(公告)号：US09595567B2

    公开(公告)日：2017-03-14

    申请号：US13585141

    申请日：2012-08-14

    申请人： Kazuhiko Yamamoto

    发明人： Kazuhiko Yamamoto

    IPC分类号： H01L29/49 ,  H01L27/24 ,  H01L29/40 ,  H01L45/00

    CPC分类号： H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/1616

    摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of insulating layers, a plurality of first interconnection layers, a plurality of second interconnection layers, a plurality of memory cells, and a resistance change film. The insulating layers and first interconnection layers are arranged in parallel with the semiconductor substrate. The second interconnection layers are arranged so as to intersect the first interconnection layers. The second interconnection layers are arranged perpendicular to the semiconductor substrate. The memory cells are arranged at intersections of the first and second interconnection layers. Each of the memory cells includes the resistance change film arranged between the first and second interconnection layers. The side of the first interconnection layer in contact with the resistance change film is retreated more in a direction to separate from the second interconnection layer than the side of the insulating layer.

    摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，多个绝缘层，多个第一互连层，多个第二互连层，多个存储单元和电阻变化膜。 绝缘层和第一互连层与半导体衬底平行布置。 第二互连层被布置成与第一互连层相交。 第二互连层被布置成垂直于半导体衬底。 存储单元布置在第一和第二互连层的交点处。 每个存储单元包括布置在第一和第二互连层之间的电阻变化膜。 与电阻变化膜接触的第一互连层的一侧比与绝缘层的侧面沿着与第二互连层分离的方向更多地退避。

    Inkjet recording sheet
    9.
    发明授权
    Inkjet recording sheet 有权
    喷墨记录纸

    公开(公告)号：US08337011B2

    公开(公告)日：2012-12-25

    申请号：US12820278

    申请日：2010-06-22

    申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

    发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

    IPC分类号： B41J2/01

    CPC分类号： B41M5/52 ,  B41M5/5245 ,  B41M5/5254 ,  B41M5/5263 ,  B41M5/5281 ,  B41M5/529

    摘要： An inkjet recording sheet for forming an image using aqueous pigment ink that includes a substrate and an ink-receiving layer formed on the substrate. The ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition. In the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.

    摘要翻译： 一种用于使用水性颜料油墨形成图像的喷墨记录纸，其包括基板和形成在基板上的油墨接收层。 通过在基材上涂布含有水解性甲硅烷基作为交联成分的阳离子性丙烯酸类硅酮乳液类树脂的涂料组合物，得到油墨接受层; 阳离子聚醚基聚氨酯树脂; 和含碳二亚胺基团的树脂，然后固化所涂覆的涂料组合物。 在涂料组合物中，阳离子丙烯酸类硅酮乳液系树脂的含量为2〜7质量％，阳离子性聚醚系聚氨酯树脂的含量为88〜94质量％，碳二亚胺基 - 含有树脂的固体成分为2〜6质量％。

    INK JET RECORDING MEDIUM
    10.
    发明申请
    INK JET RECORDING MEDIUM 有权
    喷墨记录介质

    公开(公告)号：US20110318510A1

    公开(公告)日：2011-12-29

    申请号：US13168108

    申请日：2011-06-24

    申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto

    发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto

    IPC分类号： B41M5/40

    CPC分类号： B41M5/52 ,  B41M5/506 ,  B41M5/508 ,  B41M5/5218 ,  B41M5/5236 ,  B41M5/5254 ,  B41M5/5281 ,  B41M5/529

    摘要： Provided is an ink jet recording medium which is capable of reproducing a wide range of gloss including high luster like metallic luster and substantially no luster due to matting by varying only the amount of applied ink and in which the consumption of a white ink used to adjust the glossiness thereof is small.

    摘要翻译： 本发明提供一种喷墨记录介质，其能够再现宽范围的光泽，其包括如光泽度高的光泽，并且由于仅通过改变所施加的油墨的量而消光而基本上没有光泽，并且其中用于调节的白色油墨的消耗 其光泽度小。