-
公开(公告)号：US08395185B2
公开(公告)日：2013-03-12
申请号：US12140411
申请日：2008-06-17
申请人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
发明人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
IPC分类号： H01L29/66
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/124
摘要： A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.
摘要翻译： 一种开关元件，包括：绝缘基板; 设置在所述绝缘基板的一个表面上的第一电极和第二电极; 以及电极间间隙，其设置在第一电极和第二电极之间，并且通过在第一电极和第二电极之间施加预定电压而具有在电阻发生开关现象的纳米级的间隔，其中，一个表面 的绝缘底物含有氮。
-
公开(公告)号：US20080315184A1
公开(公告)日：2008-12-25
申请号：US12140411
申请日：2008-06-17
申请人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
发明人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
IPC分类号： H01L29/06
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/124
摘要： A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.
摘要翻译： 一种开关元件，包括：绝缘基板; 设置在所述绝缘基板的一个表面上的第一电极和第二电极; 以及电极间间隙，其设置在第一电极和第二电极之间，并且通过在第一电极和第二电极之间施加预定电压而具有在电阻发生开关现象的纳米级的间隔，其中，一个表面 的绝缘底物含有氮。
-
3.发明授权Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element 有权纳米开关元件的驱动方法和配备纳米角开关元件的存储装置公开(公告)号：US07990751B2
公开(公告)日：2011-08-02
申请号：US12338313
申请日：2008-12-18
申请人： Yuichiro Masuda , Shigeo Furuta , Tsuyoshi Takahashi , Tetsuo Shimizu , Yasuhisa Naitoh , Masayo Horikawa
发明人： Yuichiro Masuda , Shigeo Furuta , Tsuyoshi Takahashi , Tetsuo Shimizu , Yasuhisa Naitoh , Masayo Horikawa
CPC分类号： G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/009 , Y10S977/708 , Y10S977/723 , Y10S977/94 , Y10S977/943
摘要： A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.
摘要翻译： 纳米点开关元件配备有包括第一电极和第二电极之间的纳米级间隙的电极间间隙部分。 通过在第一和第二电极之间施加电压，在电极间间隙部分产生切换现象。 纳米点开关元件通过接收第一电压值的电压脉冲而从其低电阻状态转移到其高电阻状态，并且通过接收施加第二电压的电压脉冲从其高电阻状态转移到其低电阻状态 值低于第一电压值。 当纳米点开关元件从高电阻状态移动到低电阻状态时，在施加第二电压值的电压脉冲之前，施加第一和第二电压值之间的中间电压值的电压脉冲。
-
公开(公告)号：US08093518B2
公开(公告)日：2012-01-10
申请号：US11992883
申请日：2006-09-25
申请人： Yasuhisa Naitoh , Masayo Horikawa , Hidekazu Abe , Tetsuo Shimizu , Wataru Mizutani , Shigeo Furuta , Masatoshi Ono , Tsuyoshi Takahashi
发明人： Yasuhisa Naitoh , Masayo Horikawa , Hidekazu Abe , Tetsuo Shimizu , Wataru Mizutani , Shigeo Furuta , Masatoshi Ono , Tsuyoshi Takahashi
IPC分类号： H01H1/02
CPC分类号： H01L45/1226 , H01L45/04 , H01L45/12
摘要： A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm
摘要翻译： 开关元件100包括绝缘基板10，设置在绝缘基板10上的第一电极20，设置在绝缘基板10上的第二电极30和设置在第一电极20和第二电极30之间的电极间间隙40， 第一电极20和第二电极30之间的距离G为0nm
-
公开(公告)号：US20090251199A1
公开(公告)日：2009-10-08
申请号：US11992883
申请日：2006-09-25
申请人： Yasuhisa Naitoh , Masayo Horikawa , Hidekazu Abe , Tetsuo Shimizu , Wataru Mizutani , Shigeo Furuta , Masatoshi Ono , Tsuyoshi Takahashi
发明人： Yasuhisa Naitoh , Masayo Horikawa , Hidekazu Abe , Tetsuo Shimizu , Wataru Mizutani , Shigeo Furuta , Masatoshi Ono , Tsuyoshi Takahashi
IPC分类号： H03K17/00
CPC分类号： H01L45/1226 , H01L45/04 , H01L45/12
摘要： A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm
摘要翻译： 开关元件100包括绝缘基板10，设置在绝缘基板10上的第一电极20，设置在绝缘基板10上的第二电极30和设置在第一电极20和第二电极30之间的电极间间隙40， 第一电极20和第二电极30之间的距离G为0nm
-
公开(公告)号：US08653912B2
公开(公告)日：2014-02-18
申请号：US12997316
申请日：2008-06-13
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/12 , H01L45/124
摘要： There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.
摘要翻译： 提供了一种开关元件，其有助于在器件中更高密度和层叠的集成，所述开关元件包括：绝缘基板; 设置在所述绝缘基板上的第一电极; 设置在所述第一电极上方的第二电极; 以及设置在第一电极和第二电极之间的电极间间隙，并且包括通过在第一电极和第二电极之间施加规定电压而引起电阻器的开关现象的纳米级间隙。
-
公开(公告)号：US20110108399A1
公开(公告)日：2011-05-12
申请号：US12997316
申请日：2008-06-13
IPC分类号： H01H59/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/12 , H01L45/124
摘要： There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.
摘要翻译： 提供了一种开关元件，其有助于在器件中更高密度和层叠的集成，所述开关元件包括：绝缘基板; 设置在所述绝缘基板上的第一电极; 设置在所述第一电极上方的第二电极; 以及设置在第一电极和第二电极之间的电极间间隙，并且包括通过在第一电极和第二电极之间施加规定电压而引起电阻器的开关现象的纳米级间隙。
-
8.发明授权Two-terminal resistance switching element with silicon, and semiconductor device 失效具有硅的两端电阻开关元件和半导体器件公开(公告)号：US08022383B2
公开(公告)日：2011-09-20
申请号：US12213054
申请日：2008-06-13
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L45/04 , H01L45/1206 , H01L45/1253
摘要： A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from 0.1 nm to 100 nm. A semiconductor device can be obtained by providing the two-terminal resistance switching element in a memory, a storage device or other device.
摘要翻译： 两端电阻开关元件，其中每个掺杂有杂质的两个硅膜以间距宽度排列成几毫米数量级。 间隙宽度在0.1nm至100nm的范围内。 可以通过在存储器，存储装置或其他装置中提供两端电阻开关元件来获得半导体器件。
-
9.发明申请Two-terminal resistance switching element with silicon, and semiconductor device 失效具有硅的两端电阻开关元件和半导体器件公开(公告)号：US20090039330A1
公开(公告)日：2009-02-12
申请号：US12213054
申请日：2008-06-13
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L45/04 , H01L45/1206 , H01L45/1253
摘要： A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers.
摘要翻译： 两端电阻开关元件，其中每个掺杂有杂质的两个硅膜以间距宽度排列成几毫米数量级。
-
公开(公告)号：US20080232153A1
公开(公告)日：2008-09-25
申请号：US11976739
申请日：2007-10-26
申请人： Yasuhisa Naitoh , Tetsuo Shimizu , Masayo Horikawa , Hidekazu Abe
发明人： Yasuhisa Naitoh , Tetsuo Shimizu , Masayo Horikawa , Hidekazu Abe
IPC分类号： G11C11/00
CPC分类号： H01L45/1226 , B82Y10/00 , G11C11/56 , G11C13/00 , G11C2211/5614 , H01L45/04 , H01L45/1253
摘要： A non-volatile memory device 100 contains: an insulating substrate 10; a first electrode 20 provided on the insulating substrate 10; a second electrode 30 provided on the insulating substrate 10; and a gap 40 set between the first electrode 20 and the second electrode 30, in which a distance G between the first electrode 20 and the second electrode 30 is: 0 nm
摘要翻译： 非易失性存储装置100包含：绝缘基板10; 设置在绝缘基板10上的第一电极20; 设置在绝缘基板10上的第二电极30; 以及设置在第一电极20和第二电极30之间的间隙40，其中第一电极20和第二电极30之间的距离G为：0nm
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.045 秒)
