公开(公告)号：US20110179648A1

公开(公告)日：2011-07-28

申请号：US13009226

申请日：2011-01-19

申请人： Shigetoshi SAKON ,  Kenji NARITA ,  Jyuzaemon IWASAKI ,  Makoto FUKUTANI ,  Hiroaki SHIMIZU ,  Takeshi SHIBA

发明人： Shigetoshi SAKON ,  Kenji NARITA ,  Jyuzaemon IWASAKI ,  Makoto FUKUTANI ,  Hiroaki SHIMIZU ,  Takeshi SHIBA

IPC分类号： B26B19/42

CPC分类号： B26B19/384

摘要： An electric shaver includes: a main body; an outer blade provided to an end of the main body and having a blade hole defined by a bar; and an inner blade provided inward of the outer blade and configured to reciprocate in a longitudinal direction of the outer blade to cut hair in the blade hole with the outer blade. The bar has a hair raising portion coming in contact with hair upon movement of the outer blade on a skin surface to raise hair up from the skin surface. A contact pressure on the skin surface to be exerted by the outer blade in a first portion of the outer blade is greater than that in a second portion of the outer blade. Hair raising performance in raising hair up from the skin surface in the first portion is smaller than hair raising performance in the second portion.

摘要翻译： 电动剃须刀包括：主体; 设置在主体的端部并具有由杆限定的叶片孔的外刀片; 以及内刀片，其设置在所述外刀片的内侧，并且构造成沿所述外刀片的纵向方向往复运动，以利用所述外刀片在所述刀片孔中切割毛发。 该条具有在外刀片在皮肤表面上移动时与毛发接触的毛发部分，以从皮肤表面抬起头发。 在外刀片的第一部分中由外刀片施加的皮肤表面上的接触压力大于外刀片的第二部分中的接触压力。 在第一部分中从皮肤表面抬起头发的起毛性能小于第二部分中的头发抬高性能。

公开(公告)号：US20100144146A1

公开(公告)日：2010-06-10

申请号：US12627572

申请日：2009-11-30

申请人： Koji UTAKA ,  Yoshiharu HIDAKA ,  Kenji NARITA

发明人： Koji UTAKA ,  Yoshiharu HIDAKA ,  Kenji NARITA

IPC分类号： H01L21/30

CPC分类号： H01L21/32134 ,  H01L21/02068 ,  H01L21/0209 ,  H01L21/28052 ,  H01L21/28518 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L29/40111 ,  H01L29/665 ,  H01L29/6684

摘要： The step a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate containing silicon or a conductive film containing silicon is performed, the step b) of forming a silicide film containing a noble metal on the semiconductor substrate or the conductive film is performed, after the step a), by performing thermal treatment to the semiconductor substrate, the step c) of activating unreacted part of the noble metal using a first chemical solution is performed after the step b), and the step d) of dissolving the unreacted part of the noble metal activated in the step c) is performed. The step d) is performed within 30 minutes or less after the step c).

摘要翻译： 执行在包含硅的半导体衬底或含有硅的导电膜上形成含有贵金属的贵金属膜或金属膜的步骤a），在半导体衬底上形成含有贵金属的硅化物膜的步骤b） 或者在步骤a）之后执行导电膜，通过对半导体衬底进行热处理，在步骤b）之后执行使用第一化学溶液活化未反应部分贵金属的步骤c），并且步骤 d）溶解步骤c）中活化的贵金属的未反应部分。 步骤d）在步骤c）之后的30分钟以内进行。

公开(公告)号：US20100178764A1

公开(公告)日：2010-07-15

申请号：US12686841

申请日：2010-01-13

申请人： Kenji NARITA ,  Yoshiharu Hidaka ,  Koji Utaka ,  Takao Yamaguchi ,  Itaru Kanno ,  Hirokazu Kurisu

发明人： Kenji NARITA ,  Yoshiharu Hidaka ,  Koji Utaka ,  Takao Yamaguchi ,  Itaru Kanno ,  Hirokazu Kurisu

IPC分类号： H01L21/3205

CPC分类号： H01L21/2855 ,  H01L21/02068 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device, includes the steps of (a) forming a metal film containing a precious metal on a substrate having a semiconductor layer containing silicon or on a conductive film containing silicon formed on the substrate, (b) after step (a), heat-treating the substrate to allow the precious metal to react with silicon to form a silicide film containing the precious metal on the substrate or the conductive film, (c) after step (b), forming an oxide film on a portion of the silicide film underlying an unreacted portion of the precious metal using a first chemical solution, and (d) dissolving the unreacted portion of the precious metal using a second chemical solution.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在具有含硅的半导体层的基板上或在基板上形成含有硅的导电膜上形成含有贵金属的金属膜，（b）在步骤 a），对基材进行热处理以使贵金属与硅反应以在基材或导电膜上形成含有贵金属的硅化物膜，（c）在步骤（b）之后，在一部分上形成氧化膜 使用第一化学溶液在贵金属的未反应部分下面的硅化物膜，和（d）使用第二化学溶液溶解贵金属的未反应部分。

公开(公告)号：US20160105088A1

公开(公告)日：2016-04-14

申请号：US14894240

申请日：2014-01-22

申请人： Kenji NARITA

发明人： Kenji NARITA

IPC分类号： H02K19/10 ,  H02K1/14 ,  H02K1/27

CPC分类号： H02K19/10 ,  H02K1/145 ,  H02K1/2706 ,  H02K1/2786 ,  H02K2201/03

摘要： In a DC-excited synchronous electric motor in which a field system is excited by using an exciting core, in order to obtain large torque density and output density, the effective area of air gaps, through which an armature and a field system face each other, is increased. The armature of a stator 300A (300B) is arranged to face a side surface in a radial direction and two side surfaces in an axial direction of the rotor 200A (200B), with air gaps, respectively. By supplying multiphase AC current from an inverter to the armature, rotating magnetic fields having the same polarity spatially and temporally are generated. Thereby, a torque and a rotation output in the same rotating direction are obtained in three air gaps G1 to G3.

摘要翻译： 在通过使用励磁铁芯励磁系统的直流励磁同步电动机中，为了获得大的转矩密度和输出密度，电枢和励磁系统相互面对的气隙的有效面积 ，增加了。 定子300A（300B）的电枢被布置为分别面对具有气隙的沿径向的侧表面和转子200A（200B）的轴向方向上的两个侧表面。 通过从逆变器提供多相交流电流到电枢，产生空间和时间上具有相同极性的旋转磁场。 由此，在三个气隙G1〜G3中获得在同一旋转方向上的转矩和旋转输出。

公开(公告)号：US20100178763A1

公开(公告)日：2010-07-15

申请号：US12651673

申请日：2010-01-04

申请人： Kenji NARITA ,  Yoshiharu Hidaka ,  Koji Utaka

发明人： Kenji NARITA ,  Yoshiharu Hidaka ,  Koji Utaka

IPC分类号： H01L21/3205 ,  B05C11/00 ,  B05C9/10

CPC分类号： H01L21/28518 ,  H01L21/02068 ,  H01L21/2855 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device includes the steps of: (a) forming an alloy film containing a precious metal on a substrate having a semiconductor layer or on a conductive film formed on the substrate; (b) heat-treating the substrate to allow the precious metal to react with silicon forming a silicide film containing the precious metal on the substrate or the conductive film; (c) removing an unreacted portion of the alloy film with a first chemical solution after the step (b); (d) forming a silicon oxide film on the top surface of the silicide film including a portion underlying a residue of the precious metal by exposing the substrate to an oxidative atmosphere; and (e) dissolving the residue of the precious metal with a second chemical solution.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）在具有半导体层的衬底上或在形成在衬底上的导电膜上形成含有贵金属的合金膜; （b）对所述基板进行热处理以使所述贵金属与在所述基板或所述导电膜上形成含有所述贵金属的硅化物膜的硅反应; （c）在步骤（b）之后用第一化学溶液除去合成膜的未反应部分; （d）通过将基板暴露于氧化气氛，在硅化物膜的顶表面上形成氧化硅膜，该氧化硅膜包括贵金属残留物下面的部分; 和（e）用第二种化学溶液溶解贵金属的残余物。