公开(公告)号：US06472719B1

公开(公告)日：2002-10-29

申请号：US09624024

申请日：2000-07-24

申请人： Shih-Chi Lin ,  Yen-Ming Chen ,  Juin-Jie Chang ,  Kuei-Wu Huang

发明人： Shih-Chi Lin ,  Yen-Ming Chen ,  Juin-Jie Chang ,  Kuei-Wu Huang

IPC分类号： H01L2900

CPC分类号： H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a semiconductor device having air regions, the method comprises providing a base, forming a pattern of metal leads, depositing a layer of oxide over the metal leads, forming a layer of nitride over said layer of oxide, opening and etching a trench down to the base layer of material, and depositing and planarizing a dielectric layer. An alternate approach teaches the deposition of a layer of SOG over the layer of oxide that has been deposited over the metal leads, planarizing this layer of SOG down to the top of the metal leads, depositing a layer of PECVD oxide, patterning and etching this layer of PECVD oxide thereby creating openings that are in between the metal leads. The SOG that is between the metal leads can be removed thereby creating air gaps as the Intra-level dielectric for the metal leads.

摘要翻译： 一种形成具有空气区域的半导体器件的方法，所述方法包括提供基底，形成金属引线图案，在所述金属引线上沉积氧化物层，在所述氧化物层上形成氮化物层，打开和蚀刻 沟槽到材料的基层，并沉积和平坦化介电层。 一种替代方法教导了在已经沉积在金属引线上的氧化物层上沉积一层SOG，将该层SOG平坦化到金属引线的顶部，沉积一层PECVD氧化物，图案化和蚀刻该 PECVD氧化物层，从而形成位于金属引线之间的开口。 可以去除金属引线之间的SOG，从而产生用于金属引线的内部电介质的气隙。

公开(公告)号：US6130151A

公开(公告)日：2000-10-10

申请号：US307208

申请日：1999-05-07

申请人： Shih-Chi Lin ,  Yen-Ming Chen ,  Juin-Jie Chang ,  Kuei-Wu Huang

发明人： Shih-Chi Lin ,  Yen-Ming Chen ,  Juin-Jie Chang ,  Kuei-Wu Huang

IPC分类号： H01L21/764 ,  H01L21/768 ,  H01L23/482 ,  H01L21/4763

CPC分类号： H01L23/4821 ,  H01L21/764 ,  H01L21/7682 ,  H01L2924/0002

摘要： A method for forming a semiconductor device having air regions, the method comprises providing a base, forming a pattern of metal leads, depositing a layer of oxide over the metal leads, forming a layer of nitride over said layer of oxide, opening and etching a trench down to the base layer of material, and depositing and planarizing a dielectric layer. An alternate approach teaches the deposition of a layer of SOG over the layer of oxide that has been deposited over the metal leads, planarizing this layer of SOG down to the top of the metal leads, depositing a layer of PECVD oxide, patterning and etching this layer of PECVD oxide thereby creating openings that are in between the metal leads. The SOG that is between the metal leads can be removed thereby creating air gaps as the intra-level dielectric for the metal leads.

公开(公告)号：US6069063A

公开(公告)日：2000-05-30

申请号：US283841

申请日：1999-04-01

申请人： Juin-Jie Chang ,  Shih-Chi Lin ,  Yen-Ming Chen ,  Yung-Lung Hsu

发明人： Juin-Jie Chang ,  Shih-Chi Lin ,  Yen-Ming Chen ,  Yung-Lung Hsu

IPC分类号： H01L21/02 ,  H01L21/3115 ,  H01L21/314 ,  H01L21/425

CPC分类号： H01L28/20 ,  H01L21/31155 ,  H01L21/3144

摘要： A method to form polysilicon resistors shielded from hydrogen intrusion is described. A semiconductor substrate is provided. Field oxide isolation regions are provided overlying the substrate. A polysilicon layer is deposited overlying the field oxide regions and the substrate. The polysilicon layer is etched away where it is not covered by a mask to form a polysilicon resistor. An interlevel dielectric layer is deposited overlying the polysilicon resistor. Nitrogen ions are implanted into the interlevel dielectric layer. The interlevel dielectric layer is annealed to form a silicon oxynitride shield layer in the interlevel dielectric layer. Contact openings are etched through the interlevel dielectric layer to the polysilicon resistor. The contact openings are filled with a metal layer. The metal layer is patterned. The patterned metal layer is covered with a passivation layer wherein the passivation layer contains hydrogen atoms and wherein the silicon oxynitride shield layer prevents hydrogen atoms from penetrating the polysilicon resistor. The integrated circuit is completed.

摘要翻译： 描述了形成多晶硅电阻器防止氢侵入的方法。 提供半导体衬底。 场氧化物隔离区设置在衬底上。 叠加在场氧化物区域和衬底上的多晶硅层。 多晶硅层被蚀刻掉，其未被掩模覆盖以形成多晶硅电阻器。 沉积层叠介质层覆盖多晶硅电阻器。 将氮离子注入到层间电介质层中。 对层间电介质层进行退火，在层间电介质层中形成氮氧化硅屏蔽层。 接触开口通过层间介质层蚀刻到多晶硅电阻器。 接触开口填充有金属层。 金属层被图案化。 图案化的金属层被钝化层覆盖，其中钝化层含有氢原子，并且其中氮氧化硅屏蔽层防止氢原子穿透多晶硅电阻器。 集成电路完成。

公开(公告)号：US06740196B2

公开(公告)日：2004-05-25

申请号：US10081481

申请日：2002-02-21

申请人： Fu-Su Lee ,  Juin-Jie Chang ,  Ching-Shan Lu

发明人： Fu-Su Lee ,  Juin-Jie Chang ,  Ching-Shan Lu

IPC分类号： C23F100

CPC分类号： C30B31/18 ,  C30B31/12 ,  G01M11/005 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/67253

摘要： A rapid thermal anneal (RTA) chamber having one or multiple openings in a chamber wall and a reflective index monitor in the opening or openings, respectively. The reflective index monitor or monitors each measures the infrared reflective index of the reflector plate of the rapid thermal anneal chamber, and sends a corresponding signal to a process controller, an alarm, or both a process controller and an alarm. In the event that the measured reflective index of the reflector plate deviates from the reflective index of a control, the process controller terminates heating operation of the chamber to prevent damage to the semiconductor wafer in the chamber. The alarm may be activated to alert personnel to the need for immediate replacement of the contaminated reflector plate.

摘要翻译： 快速热退火（RTA）室在室壁中具有一个或多个开口，并且在开口或开口中分别具有反射指数监测器。 反射指数监视器或监视器各自测量快速热退火室的反射板的红外反射指数，并将相应的信号发送到过程控制器，报警器或过程控制器和报警器。 在反射板的测量反射指数偏离控制器的反射指数的情况下，过程控制器终止腔室的加热操作，以防止对腔室中的半导体晶片的损坏。 可能会启动警报，提醒人员需要立即更换污染的反射板。

公开(公告)号：US06589356B1

公开(公告)日：2003-07-08

申请号：US09676746

申请日：2000-09-29

申请人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

发明人： Juin-Jie Chang ,  Jih-Churng Twu ,  Rong-Hui Kao

IPC分类号： C23G102

CPC分类号： H01L21/02046 ,  H01L21/02052

摘要： A method for cleaning a silicon-based substrate in an ammonia-containing solution without incurring any damages to the silicon surface by NH4OH vapor is described. The method can be conducted by first providing a silicon-based substrate that has a silicon surface, then forming a silicon oxide layer of very small thickness, i.e. less than 10 Å, on the silicon surface. The silicon-based substrate can then be cleaned in an ammonia-containing solution without incurring any surface damage to the silicon, i.e. such as the formation of silicon holes. The present invention novel method can be carried out by either adding an additional oxidation tank before the SC-1 cleaning tank, or adding an oxidant to a quick dump rinse tank prior to the SC-1 cleaning process.

摘要翻译： 描述了一种在含氨溶液中清洗硅基底物而不会由NH 4 OH蒸气对硅表面造成任何损害的方法。 该方法可以通过首先提供具有硅表面的硅基衬底，然后在硅表面上形成非常小的厚度（即，小于）的氧化硅层来进行。 然后可以在含氨溶液中清洗硅基基材，而不会对硅造成任何表面损伤，例如形成硅孔。 本发明的新方法可以通过在SC-1清洗槽之前添加另外的氧化槽，或在SC-1清洗过程之前向快速倾倒冲洗槽中加入氧化剂来进行。