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公开(公告)号：US08759928B2
公开(公告)日：2014-06-24
申请号：US13439628
申请日：2012-04-04
申请人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Chi-Cheng Hung , Jun-Nan Nian , Chih-Chung Chang
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Chi-Cheng Hung , Jun-Nan Nian , Chih-Chung Chang
CPC分类号： H01L31/1804 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L31/103 , Y02E10/547
摘要： A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.
摘要翻译： 提供了一种用于减少互补金属氧化物半导体背面照明图像传感器中的串扰的系统和方法。 一个实施例包括在金属化层的基板的相对侧上的像素区域周围形成网格。 栅格可以由诸如具有富含（110）的晶体取向的钨的材料形成。 该方向有助于防止在格栅图案化过程中发生的缺陷。
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公开(公告)号：US20130264668A1
公开(公告)日：2013-10-10
申请号：US13439628
申请日：2012-04-04
申请人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Chi-Cheng Hung , Jun-Nan Nian , Chih-Chung Chang
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Chi-Cheng Hung , Jun-Nan Nian , Chih-Chung Chang
IPC分类号： H01L31/02
CPC分类号： H01L31/1804 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L31/103 , Y02E10/547
摘要： A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid.
摘要翻译： 提供了一种用于减少互补金属氧化物半导体背面照明图像传感器中的串扰的系统和方法。 一个实施例包括在金属化层的基板的相对侧上的像素区域周围形成网格。 栅格可以由诸如具有富含（110）的晶体取向的钨的材料形成。 该方向有助于防止在格栅图案化过程中发生的缺陷。
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公开(公告)号：US20130126950A1
公开(公告)日：2013-05-23
申请号：US13304235
申请日：2011-11-23
申请人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： H01L23/53209 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A system and method for forming a semiconductor device is provided. An embodiment comprises forming a silicide region on a substrate along with a transition region between the silicide region and the substrate. The thickness of the silicide precursor material layer along with the annealing conditions are controlled such that there is a larger ratio of one atomic species within the transition region than another atomic species, thereby increasing the hole mobility within the transition region.
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公开(公告)号：US08435893B1
公开(公告)日：2013-05-07
申请号：US13304235
申请日：2011-11-23
申请人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L21/44
CPC分类号： H01L23/53209 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A system and method for forming a semiconductor device is provided. An embodiment comprises forming a silicide region on a substrate along with a transition region between the silicide region and the substrate. The thickness of the silicide precursor material layer along with the annealing conditions are controlled such that there is a larger ratio of one atomic species within the transition region than another atomic species, thereby increasing the hole mobility within the transition region.
摘要翻译： 提供一种用于形成半导体器件的系统和方法。 一个实施例包括在硅化物区域和衬底之间的过渡区域上形成衬底上的硅化物区域。 控制硅化物前体材料层的厚度以及退火条件，使得在过渡区域内的一种原子种类的比例比另一种原子种类更大，从而增加过渡区域内的空穴迁移率。
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