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    GLASS-BASED SOI STRUCTURES
    2.
    发明申请
    GLASS-BASED SOI STRUCTURES 有权
    基于玻璃的SOI结构

    公开(公告)号：US20100213582A9

    公开(公告)日：2010-08-26

    申请号：US12328030

    申请日：2008-12-04

    申请人： James G. Couillard ,  Kishor P. Gadkaree ,  Joseph F. Mach

    发明人： James G. Couillard ,  Kishor P. Gadkaree ,  Joseph F. Mach

    IPC分类号： H01L29/12 ,  H01L29/02

    CPC分类号： H01L21/76254 ,  H01L21/2007

    摘要： Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.

    摘要翻译： 提供了包括大面积SOI结构的绝缘体上半导体（SOI）结构，其具有一个或多个由连接到支撑衬底的基本上单晶半导体（例如，掺杂硅）的层（15）组成的区域 20）由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃 - 陶瓷优选是透明的，并且优选具有小于1000℃的应变点，250℃下的电阻率小于或等于1016＆OHgr·-cm，并且包含正离子（ 例如碱金属或碱土离子），其可以响应于在升高的温度（例如，300-1000℃）下的电场而在玻璃或玻璃陶瓷内移动。 半导体层（15）和支撑衬底（20）之间的结合强度优选为至少8焦耳/米2。 半导体层（15）可以包括混合区域（16），其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底（20）优选地包括具有降低的可移动正离子浓度的耗尽区（23）。

    Method of making activated carbon honeycombs having varying adsorption capacities
    3.
    发明授权
    Method of making activated carbon honeycombs having varying adsorption capacities 失效
    制备具有不同吸附能力的活性炭蜂窝的方法

    公开(公告)号：US5510063A

    公开(公告)日：1996-04-23

    申请号：US228198

    申请日：1994-04-15

    申请人： Kishor P. Gadkaree ,  Joseph F. Mach

    发明人： Kishor P. Gadkaree ,  Joseph F. Mach

    IPC分类号： B01J20/20 ,  C04B38/00 ,  C04B38/06 ,  C01B31/00 ,  B29C43/18

    CPC分类号： C04B38/065 ,  B01J20/20 ,  B01J20/28045 ,  C04B38/0022 ,  C04B38/067 ,  Y10S264/48 ,  Y10S55/05 ,  Y10S95/901

    摘要： An activated carbon body having flow-through channels and method of making the body. The method involves combining and shaping channel-forming material and optionally fugitive pore-forming material and non-fugitive support material, and a crosslinkable resin into a green body and curing the resin. The temperature at which the channel-forming material begins to distort is greater than the curing temperature of the resin. The resin is carbonized and at the same time the channel-forming material is vaporized out to form a carbon body having flow through channels in the configuration of the fugitive material. The carbon body is then activated. Among other shapes the channels can be straight, curved or crisscrossed.

    摘要翻译： 具有流通通道的活性炭体和制造身体的方法。 该方法包括将通道形成材料和任选的短暂的成孔材料和非缓冲性支撑材料以及可交联树脂组合并成形为生坯并固化树脂。 通道形成材料开始变形的温度大于树脂的固化温度。 树脂被碳化，并且同时使通道形成材料蒸发出来，以形成具有流动通道的缓冲材料构型的碳体。 碳体然后被激活。 在其他形状中，通道可以是直的，弯曲的或十字形的。

    Process for producing silicon carbide bodies
    5.
    发明授权
    Process for producing silicon carbide bodies 失效
    碳化硅体制造方法

    公开(公告)号：US06555031B2

    公开(公告)日：2003-04-29

    申请号：US09817411

    申请日：2001-03-26

    申请人： Kishor P. Gadkaree ,  Joseph F. Mach ,  John L. Stempin

    发明人： Kishor P. Gadkaree ,  Joseph F. Mach ,  John L. Stempin

    IPC分类号： C01B3100

    CPC分类号： C04B38/0006

    摘要： A silicon carbide honeycomb body is made by shaping a plasticizable raw material batch mixture containing powdered silicon metal, a water soluble crosslinking thermoset resin, a powdered silicon-containing filler, a water soluble thermoplastic binder, and water into a green honeycomb body, and thereafter drying, curing and sintering the green body at a temperature sufficient to convert the green body to a porous silicon carbide sintered body.

    摘要翻译： 碳化硅蜂窝体通过将含有粉末状硅金属，水溶性交联热固性树脂，粉末状含硅填料，水溶性热塑性粘合剂和水的可塑性原料分批混合物成形为绿色蜂窝体而制成，然后 在足以将生坯转化为多孔碳化硅烧结体的温度下干燥，固化和烧结生坯。

    Method of making activated carbon composites from supported crosslinkable resins
    8.
    发明授权
    Method of making activated carbon composites from supported crosslinkable resins 失效
    由负载的可交联树脂制备活性炭复合材料的方法

    公开(公告)号：US5776385A

    公开(公告)日：1998-07-07

    申请号：US806892

    申请日：1997-02-25

    申请人： Kishor P. Gadkaree ,  Joseph F. Mach

    发明人： Kishor P. Gadkaree ,  Joseph F. Mach

    IPC分类号： B01J20/20 ,  C04B35/83 ,  C01B31/00

    CPC分类号： B01J20/20 ,  C04B35/83

    摘要： A method for making an activated carbon composite which involves providing a crosslinkable resin and a support material which is wettable by the resin. The support material can be cotton, chopped wood, sisal, non-fugitive material, and combinations of these. The support is contacted with the resin; and the resin and support material are dried. The resin and support material are then shaped, the resin is cured, and the resin and any carbonizable material are carbonized. The carbon is then activated to produce the product composite. An activated carbon composite produced by the above described method in which the carbon is in the form of a continuous structure reinforced by and uniformly distributed throughout non-fugitive support material.

    摘要翻译： 一种制备活性炭复合物的方法，其包括提供可交联树脂和可被树脂润湿的载体材料。 支撑材料可以是棉花，切碎的木材，剑麻，非易失性材料，以及它们的组合。 支撑体与树脂接触; 并干燥树脂和载体材料。 然后树脂和支撑材料成型，树脂固化，并且树脂和任何可碳化的材料被碳化。 然后将碳活化以产生产物复合物。 通过上述方法制备的活性炭复合材料，其中碳是连续结构形式，并且通过非逸散性支撑材料均匀分布并均匀分布。

    Glass-based SOI structures
    9.
    发明授权
    Glass-based SOI structures 有权
    基于玻璃的SOI结构

    公开(公告)号：US07605053B2

    公开(公告)日：2009-10-20

    申请号：US12082211

    申请日：2008-04-09

    申请人： James G. Couillard ,  Kishor P. Gadkaree ,  Joseph F. Mach

    发明人： James G. Couillard ,  Kishor P. Gadkaree ,  Joseph F. Mach

    IPC分类号： H01L21/46 ,  H01L21/30

    CPC分类号： H01L21/76254 ,  H01L21/2007

    摘要： Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate preferably includes a depletion region which has a reduced concentration of the mobile positive ions.

    摘要翻译： 提供了包括大面积SOI结构的半导体绝缘体（SOI）结构，其具有一个或多个由连接到由氧化物构成的支撑衬底上的基本单晶半导体层（例如，掺杂硅）组成的区域 玻璃或氧化物玻璃陶瓷。 氧化物玻璃或氧化物玻璃陶瓷优选是透明的，并且优选具有小于1000℃的应变点，小于或等于1016Ω·cm的250℃下的电阻率，并且包含正离子（例如 ，碱金属或碱土离子），其可在玻璃或玻璃陶瓷中响应于高温下的电场（例如，300-1000℃）而移动。 半导体层和支撑衬底之间的结合强度优选为至少8焦耳/米2。 半导体层可以包括其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应的混合区域。 支撑衬底优选地包括具有降低的可移动正离子浓度的耗尽区。

    GLASS-BASED SOI STRUCTURES
    10.
    发明申请
    GLASS-BASED SOI STRUCTURES 有权
    基于玻璃的SOI结构

    公开(公告)号：US20090085176A1

    公开(公告)日：2009-04-02

    申请号：US12328030

    申请日：2008-12-04

    申请人： James G. Couillard ,  Kishor P. Gadkaree ,  Joseph F. Mach

    发明人： James G. Couillard ,  Kishor P. Gadkaree ,  Joseph F. Mach

    IPC分类号： H01L29/12 ,  H01L29/02

    CPC分类号： H01L21/76254 ,  H01L21/2007

    摘要： Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.

    摘要翻译： 提供了包括大面积SOI结构的绝缘体上半导体（SOI）结构，其具有一个或多个由连接到支撑衬底的基本上单晶半导体（例如，掺杂硅）的层（15）组成的区域 20）由氧化物玻璃或氧化物玻璃陶瓷构成。 氧化物玻璃或氧化物玻璃陶瓷优选是透明的，并且优选具有小于1000℃的应变点，小于或等于1016Ω·cm的250℃下的电阻率，并且包含正离子（例如 ，碱金属或碱土离子），其可在玻璃或玻璃陶瓷中响应于高温下的电场（例如，300-1000℃）而移动。 半导体层（15）和支撑衬底（20）之间的结合强度优选为至少8焦耳/米2。 半导体层（15）可以包括混合区域（16），其中半导体材料已经与源自玻璃或玻璃陶瓷的氧离子反应。 支撑衬底（20）优选地包括具有降低的可移动正离子浓度的耗尽区（23）。