公开(公告)号：US07041599B1

公开(公告)日：2006-05-09

申请号：US09469709

申请日：1999-12-21

申请人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

发明人： Shijian Li ,  Fred C. Redeker ,  John White ,  Ramin Emami

IPC分类号： H01L21/302

CPC分类号： B24B37/04 ,  B24B57/02 ,  H01L21/3212

摘要： High through-put Cu CMP is achieved with reduced erosion and dishing by a multi-step polishing technique. Deposited Cu is polished with fixed abrasive polishing pads initially at a high removal rate and subsequently at a reduced removal rate and high Cu:barrier layer (Ta) selectivity. Embodiments of the present invention include reducing dishing by: controlling platen rotating speeds; increasing the concentration of active chemicals; and cleaning the polishing pads between wafers. Embodiments also include removing particulate material during CMP by increasing the flow rate of the chemical agent or controlling the static etching rate between about 100 Å and about 150 Å per minute, and recycling the chemical agent. Embodiments further include flowing an inhibitor across the wafer surface after each CMP step to reduce the static etching rate.

摘要翻译： 通过多步抛光技术，可以减少腐蚀和凹陷，实现高通量Cu CMP。 沉积的Cu以固定的研磨抛光垫抛光，最初以高的去除速率和随后的降低的去除速率和高的Cu：阻挡层（Ta）选择性。 本发明的实施例包括：通过以下步骤减少凹陷：控制压板转速; 增加活性化学品的浓度; 并在晶片之间清洁抛光垫。 实施方案还包括通过增加化学试剂的流速或控制每分钟约100埃至约150埃的静态蚀刻速率和循环该化学试剂来在CMP期间除去颗粒物质。 实施例还包括在每个CMP步骤之后使抑制剂流过晶片表面以降低静态蚀刻速率。

公开(公告)号：US07497767B2

公开(公告)日：2009-03-03

申请号：US11046189

申请日：2005-01-28

申请人： Hung Chih Chen ,  Shijian Li ,  John M. White ,  Ramin Emami ,  Fred C. Redeker ,  Steven M. Zuniga ,  Ramakrishna Cheboli

发明人： Hung Chih Chen ,  Shijian Li ,  John M. White ,  Ramin Emami ,  Fred C. Redeker ,  Steven M. Zuniga ,  Ramakrishna Cheboli

IPC分类号： B24B5/35

CPC分类号： B24B37/30

摘要： A carrier head for chemical mechanical polishing is described. The carrier head includes a backing assembly, a housing and a damping material. The backing assembly includes a substrate support surface. The housing is connectable to a drive shaft to rotate with the drive shaft about a rotation axis. In one implementation, the damping material is in a load path between the backing assembly and the housing to reduce transmission of vibrations from the backing assembly to the housing.

摘要翻译： 描述了用于化学机械抛光的载体头。 载体头包括背衬组件，壳体和阻尼材料。 背衬组件包括基板支撑表面。 壳体可连接到驱动轴，以驱动轴绕旋转轴线旋转。 在一个实施方案中，阻尼材料位于背衬组件和壳体之间的负载路径中，以减少振动从背衬组件传递到壳体。

公开(公告)号：US07104267B2

公开(公告)日：2006-09-12

申请号：US09727133

申请日：2000-11-29

申请人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

发明人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

IPC分类号： H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusting agent to produce a pH between about 3 and about 11, and deionized water, and then applying a corrosion inhibitor solution. The composition may further comprise a reducing agent and/or corrosion inhibitor. The method may further comprise applying the corrosion inhibitor solution prior to treating the substrate surface with the composition.

摘要翻译： 一种用组合物和腐蚀抑制剂溶液处理铜或铜合金基材表面以最小化缺陷形成和表面腐蚀的方法，该方法包括施加包含一种或多种螯合剂的组合物，pH调节剂以产生约3 约11，去离子水，然后涂上缓蚀剂溶液。 组合物还可以包含还原剂和/或缓蚀剂。 该方法还可以包括在用组合物处理基材表面之前施加腐蚀抑制剂溶液。

公开(公告)号：US06669538B2

公开(公告)日：2003-12-30

申请号：US09512745

申请日：2000-02-24

申请人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

发明人： Shijian Li ,  Ramin Emami ,  Sen-Hou Ko ,  Shi-Ping Wang ,  Fred C. Redeker ,  Lizhong Sun ,  Stan Tsai

IPC分类号： B24B100

CPC分类号： B24B53/017

摘要： The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

摘要翻译： 本发明通常提供一种用于在衬底处理系统中清洁抛光垫，例如固定研磨垫的系统和装置。 在一个实施例中，该系统包括一个或多个喷嘴，其以在喷嘴处测量的约30psi至约300psi或更大的压力喷射流体至抛光垫的表面的锐角处的抛光垫上。 喷嘴可以朝向垫的周边向下和向外喷射以便于从其中移除碎片。 该系统可以包括压力源以产生足够的流体压力，该流体压力显着高于可从设施设施获得的典型流体压力。

公开(公告)号：US06432826B1

公开(公告)日：2002-08-13

申请号：US09450479

申请日：1999-11-29

申请人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

发明人： Ramin Emami ,  Shijian Li ,  Sen-Hou Ko ,  Fred C. Redeker ,  Madhavi Chandrachood

IPC分类号： H01L21302

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： Cu metallization is treated to reduce defects and effect passivation by removing a thin surface layer or removing corrosion stains, subsequent to CMP and barrier layer removal, employing a cleaning composition comprising deionized water, an acid and ammonium hydroxide and/or an amine. Embodiments include removing up to about 100 Å of the Cu metallization surface in a damascene opening by sequentially treating the exposed Cu surface with: an optional corrosion inhibitor; a solution having a pH of about 4 to about 11 and containing an acid, ammonium hydroxide and/or an amine, and deionized water; and a corrosion inhibitor.

摘要翻译： 通过使用包含去离子水，酸和氢氧化铵和/或胺的清洁组合物，在CMP和阻隔层去除之后，通过去除薄的表面层或去除腐蚀污渍来处理Cu金属化以减少缺陷并实现钝化。 实施例包括通过用任意的腐蚀抑制剂依次处理暴露的Cu表面，在镶嵌开口中去除多达约100埃的Cu金属化表面; pH为约4至约11并含有酸，氢氧化铵和/或胺的溶液和去离子水; 和腐蚀抑制剂。

公开(公告)号：US07014545B2

公开(公告)日：2006-03-21

申请号：US10754997

申请日：2004-01-10

申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B7/00

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

公开(公告)号：US06676497B1

公开(公告)日：2004-01-13

申请号：US09658417

申请日：2000-09-08

申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B700

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

公开(公告)号：US07331847B2

公开(公告)日：2008-02-19

申请号：US11333992

申请日：2006-01-17

申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B7/00 ,  B24B9/00

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 抛光台包括压板，安装在压板上的振动阻尼器和安装在振动阻尼器上的衬底抛光垫。 振动阻尼器包括当经受变形时不会反弹到其原始形状的材料。

公开(公告)号：US06832948B1

公开(公告)日：2004-12-21

申请号：US09454354

申请日：1999-12-03

申请人： Manoocher Birang ,  Ramin Emami ,  Shijian Li ,  Fred C. Redeker

发明人： Manoocher Birang ,  Ramin Emami ,  Shijian Li ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B37/042 ,  B24B37/245

摘要： The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

摘要翻译： 固定磨料制品的CMP去除率增加，并且通过热预处理提高了晶片到晶片的均匀性。 实施例包括通过用热水加热至约90℃至约100℃的温度来预固定固定的磨料制品，以增加和稳定Cu或Cu合金CMP去除速率。

公开(公告)号：US06656842B2

公开(公告)日：2003-12-02

申请号：US09401643

申请日：1999-09-22

申请人： Shijian Li ,  Fred C. Redeker ,  Ramin Emami ,  Sen-Hou Ko ,  John M. White

发明人： Shijian Li ,  Fred C. Redeker ,  Ramin Emami ,  Sen-Hou Ko ,  John M. White

IPC分类号： H01L21302

CPC分类号： H01L21/3212

摘要： Deposited Cu is initially removed by CMP with fixed abrasive polishing pads stopping on the barrier layer, e.g., Ta or TaN. Buffing is then conducted selectively with respect to Cu: Ta or TaN and Cu: silicon oxide to remove the barrier layer and control dishing to no greater than 100 Å.

摘要翻译： 首先通过CMP去除沉积的Cu，固定的研磨抛光垫停止在阻挡层上，例如Ta或TaN上。 然后相对于Cu：Ta或TaN和Cu：氧化硅选择性地进行抛光以去除阻挡层并将凹陷控制在不大于100埃。