ARC-PLASMA FILM FORMATION DEVICE
    1.
    发明申请
    ARC-PLASMA FILM FORMATION DEVICE 审中-公开
    ARC等离子体膜形成装置

    公开(公告)号:US20160071702A1

    公开(公告)日:2016-03-10

    申请号:US14773573

    申请日:2013-10-29

    IPC分类号: H01J37/32

    摘要: An arc-plasma film formation device includes a film formation chamber in which a substrate to be treated is stored, a plasma chamber in which at least a part of a target is stored, the plasma chamber being configured to be connected to the film formation chamber, and a plurality of hollow coils configured to generate a continuous line of magnetic force between the target and the film formation chamber and having at least one curved section, the plurality of hollow coils being arrange in the plasma chamber and covered by an outer coat made of a non-magnetic metal. Plasma containing ions derived from the target material and generated in the plasma chamber as a result of arc discharge is transported from the target to the substrate by passing an inside of the plurality of hollow coils.

    摘要翻译: 电弧等离子体成膜装置包括:成膜室,其中存储有待处理的基板;等离子体室,其中存储有至少一部分靶;等离子体室被配置为连接到成膜室 以及多个中空线圈,其被配置为在所述靶和成膜室之间产生连续的磁力线,并且具有至少一个弯曲部分,所述多个中空线圈布置在所述等离子体室中并被外部涂层覆盖 的非磁性金属。 通过使多个中空线圈的内部通过,从目标材料产生并在等离子体室中产生的由于电弧放电而产生的等离子体从目标物传送到基板。