公开(公告)号：US06224197B1

公开(公告)日：2001-05-01

申请号：US08968878

申请日：1997-11-05

申请人： Shinichi Hirasawa ,  Masayoshi Tachihara

发明人： Shinichi Hirasawa ,  Masayoshi Tachihara

IPC分类号： B41J205

CPC分类号： B41J2/1404 ,  B41J2002/14379

摘要： A liquid jet recording head includes a plurality of ejection outlets through which droplets of liquid are ejected by thermal energy, a plurality of liquid passages communicating with the ejection outlets to supply the liquid, a plurality of supply inlets for supplying the liquid to the passages and a plurality of electro-thermal transducers provided for the respective ejection outlets to produce the thermal energy. Each of the electro-thermal transducers has a heating surface, on the bottom of a corresponding passage, for heating the liquid, and the width of each passage measured in the direction in which the passages are arranged is a maximum at a position between an end of the electro-thermal transducer element near the ejection outlet and an end thereof near the supply inlet, and the width decreases both toward the ejection outlet and toward the supply inlet. This allows the bubble created in the passage by the transducer to expand freely and provides energy-efficient droplet ejection.

摘要翻译： 液体喷射记录头包括多个喷射出口，液体通过该喷射出口通过热能喷射，多个液体通道与喷射出口连通以供应液体;多个供应入口，用于将液体供应到通道;以及 多个电热换能器设置用于相应的喷射口以产生热能。 每个电热换能器在对应的通道的底部上具有用于加热液体的加热表面，并且沿通道布置的方向测量的每个通道的宽度在端部之间的位置处是最大的 的电热换能器元件和靠近供应入口的端部，并且宽度朝向喷射出口朝向供给入口减小。 这使得传感器在通道中产生的气泡可以自由地膨胀并提供节能的液滴喷射。

公开(公告)号：US5159354A

公开(公告)日：1992-10-27

申请号：US642409

申请日：1991-01-17

申请人： Shinichi Hirasawa ,  Masayoshi Tachihara

发明人： Shinichi Hirasawa ,  Masayoshi Tachihara

IPC分类号： B41J2/14

CPC分类号： B41J2/1404 ,  B41J2002/14379

摘要： A liquid jet recording head includes a plurality of ejection outlets through which droplets of liquid are ejected by thermal energy, a plurality of liquid passages communicating with the ejection outlets to supply the liquid, a plurality of supply inlets for supplying the liquid to the passages and a plurality of electro-thermal transducers provided for the respective ejection outlets to produce the thermal energy. Each of the electro-thermal transducers has a heating surface, on the bottom of a corresponding passage, for heating the liquid, and the width of each passage measured in the direction in which the passages are arranged is a maximum at a position between an end of the electro-thermal transducer element near the ejection outlet and an end thereof near the supply inlet, and the width decreases both toward the ejection outlet and toward the supply inlet. This allows the bubble created in the passage by the transducer to expand freely and provides energy-efficient droplet ejection.

公开(公告)号：US4719478A

公开(公告)日：1988-01-12

申请号：US910727

申请日：1986-09-23

申请人： Masayoshi Tachihara ,  Shinichi Hirasawa ,  Masami Ikeda ,  Akira Asai ,  Hirokazu Komuro

发明人： Masayoshi Tachihara ,  Shinichi Hirasawa ,  Masami Ikeda ,  Akira Asai ,  Hirokazu Komuro

IPC分类号： B41J2/14 ,  G01D15/16

CPC分类号： B41J2/14129 ,  B41J2/1412 ,  B41J2202/11

摘要： A planar heat generating resistor has a heat generating resistor layer formed on or above a support member and a pair of opposing electrodes formed on the heat generating resistor layer, such that a width of the heat generating layer at the electrode area is larger than a width of the electrodes and a voltage is applied across the electrodes, in which a ratio of a maximum value of a gradient of .phi., .sqroot.(.differential..phi./.differential.x).sup.2 +(.differential..phi./.differential.y).sup.2 to a value of .sqroot.(.differential..phi./.differential.x).sup.2 +(.differential..phi./.differential.y).sup.2 at a center of the resistor is no larger than 1.4 when a Laplace equation .differential..sup.2 /.differential.x.sup.2 +.differential..sup.2 .phi./.differential.y.sup.2 =0 is solved for the heat generating resistor when an orthogonal coordinate system X-Y is defined on the resistor surface, a potential at a point (x,y) on the resistor surface is represented by .phi.(x,y), a boundary value is imparted to an area of a circumferential boundary of the resistor which contacts to one of the electrodes, a different boundary value is imparted to an area which contacts to the other electrode, and a boundary condition in which a differential coefficient of .phi. to a normal direction of the circumferential boundary is zero is imparted to an area which does not contact to any of the electrodes.

摘要翻译： 平面发热电阻器具有形成在支撑构件上或上方的发热电阻层和形成在发热电阻层上的一对相对电极，使得电极区域处的发热层的宽度大于宽度 的电极上施加电压，其中phi，2ROOT（DIFFERENTIAL phi / DIFFERENTIAL x）2（DIFFERENTIAL phi / DIFFERENTIAL y）2的梯度的最大值与2ROOT值的比值 当求解拉普拉斯方程差分2 /差分x2 +差分2比特/差分y2 = 0时，电阻中心处的差分phi /差分x）2+（差分phi /差分y）2不大于1.4 电阻器，当电阻表面上定义正交坐标系XY时，电阻表面上的点（x，y）处的电位由phi（x，y）表示，边界值被赋予圆周边界的区域 与电极之一接触的电阻器，赋予与另一个电极接触的区域不同的边界值，并且赋予与周向边界的法线方向的微分系数为零的边界条件 到不与任何电极接触的区域。

公开(公告)号：US08492276B2

公开(公告)日：2013-07-23

申请号：US12537766

申请日：2009-08-07

申请人： Taichi Abe ,  Hirotaka Shida ,  Akihiro Takemura ,  Mitsuru Meno ,  Shinichi Hirasawa ,  Kenji Iwade ,  Takeshi Nishioka

发明人： Taichi Abe ,  Hirotaka Shida ,  Akihiro Takemura ,  Mitsuru Meno ,  Shinichi Hirasawa ,  Kenji Iwade ,  Takeshi Nishioka

IPC分类号： H01L21/3212

CPC分类号： C09K13/06 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

摘要： A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

摘要翻译： 使用化学机械抛光水性分散体来抛光包括含有钨的互连层的抛光对象。 化学机械抛光水分散体包括：（A）阳离子水溶性聚合物; （B）铁（III）化合物; 和（C）胶体二氧化硅颗粒。 阳离子水溶性聚合物（A）的含量（质量％）（质量％）和铁（III）化合物（B）的含量（MB）（质量％）满足关系式“MA / MB = 0.004〜0.1 “。 化学机械抛光水性分散体的pH为1〜3。

公开(公告)号：US4847639A

公开(公告)日：1989-07-11

申请号：US242283

申请日：1988-09-09

申请人： Masao Sugata ,  Tatsuo Masaki, deceased ,  Shinichi Hirasawa ,  Hirokazu Komuro ,  Yasuhiro Yano

发明人： Masao Sugata ,  Tatsuo Masaki, deceased ,  Shinichi Hirasawa ,  Hirokazu Komuro ,  Yasuhiro Yano

IPC分类号： B41J2/14

CPC分类号： B41J2/14129 ,  B41J2202/03 ,  Y10T428/30

摘要： A liquid jet recording head such as an ink jet recording head has liquid passages having liquid outlets through which a recording liquid is discharged in the form of jet of droplet, and electro-thermal transducers for generating heat which produce energy for discharging the liquid in response to inputted electric signals. The electro-thermal transducer has a heat-generating resistance layer which is made of an amorphous material containing halogen atoms and hydrogen atoms in a matrix of carbon atoms. Disclosed also is a recording system incorporating this recording head. The amorphous material can further contain silicon atoms and/or germanium atoms.

摘要翻译： 诸如喷墨记录头的液体喷射记录头具有液体通道，液体通道具有液体出口，以液滴的形式喷射记录液体;以及电热换能器，用于产生用于响应地产生排出液体的能量的热量 输入电信号。 电热换能器具有由在碳原子基体中含有卤素原子和氢原子的无定形材料制成的发热电阻层。 还公开了一种结合该记录头的记录系统。 无定形材料可以进一步含有硅原子和/或锗原子。

公开(公告)号：US4626875A

公开(公告)日：1986-12-02

申请号：US652888

申请日：1984-09-21

申请人： Toshitami Hara ,  Hisanori Tsuda ,  Shinichi Hirasawa

发明人： Toshitami Hara ,  Hisanori Tsuda ,  Shinichi Hirasawa

IPC分类号： B41J2/14 ,  G01D15/18

CPC分类号： B41J2/14129

摘要： An apparatus for liquid-jet recording having heat-generating means and means for jetting a liquid utilizing an energy generated by the heat-generating means comprises an electrode provided in contact with the liquid in impart a potential to the liquid lower than the potential used to generate heat.

摘要翻译： 具有发热装置的液体喷射记录装置和利用由发热装置产生的能量喷射液体的装置包括与液体接触的电极，使液体的电位低于用于 发热。

公开(公告)号：US20070224760A1

公开(公告)日：2007-09-27

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US06564310B2

公开(公告)日：2003-05-13

申请号：US08967263

申请日：1997-11-07

申请人： Kazuhiro Nakata ,  Shinichi Hirasawa ,  Tadashi Yamamoto ,  Toshiharu Inui ,  Kazuhiro Nakajima

发明人： Kazuhiro Nakata ,  Shinichi Hirasawa ,  Tadashi Yamamoto ,  Toshiharu Inui ,  Kazuhiro Nakajima

IPC分类号： G06F1200

CPC分类号： G06K15/10 ,  G06F3/1208 ,  G06F3/1211 ,  G06F3/1221 ,  G06F3/1265 ,  G06F3/1267 ,  G06F3/1284 ,  G06K2215/0077 ,  Y02D10/1592

摘要： A data transfer circuit or a recording apparatus includes an address setting unit for setting a start address for a buffer memory, an offset setting unit for setting an offset for the buffer memory, and an address creating unit for creating a predetermined number of consecutive transfer addresses to be supplied for the buffer memory using a reference address. The circuit also includes an arithmetic logic unit that, after the address creating unit has created transfer addresses using the start address as a reference address, calculates a new reference address in accordance with the offset relative to the start address so as to provide the new reference address to the address creating unit.

摘要翻译： 数据传输电路或记录装置包括用于设置缓冲存储器的开始地址的地址设置单元，用于设置缓冲存储器的偏移量的偏移设置单元和用于创建预定数量的连续传送地址的地址创建单元 使用参考地址为缓冲存储器提供。 该电路还包括算术逻辑单元，在地址创建单元使用起始地址创建传送地址作为参考地址之后，根据相对于起始地址的偏移来计算新的参考地址，从而提供新的参考 地址到地址创建单元。

公开(公告)号：US6072413A

公开(公告)日：2000-06-06

申请号：US969349

申请日：1997-11-28

申请人： Shinichi Hirasawa

发明人： Shinichi Hirasawa

IPC分类号： H03M1/10 ,  H03K19/177 ,  H03M1/74 ,  H03M1/66

CPC分类号： H03M1/745

摘要： In a digital-to-analog converter, a logic circuit includes a plurality of MOS transistors each having a gate connected to one of input signal lines, a drain connected to a first power supply terminal and a source which has one of a connection state where the source is connected to one of output signal lines and a disconnection state where the source is not connected to the output signal lines. A reference current source includes a constant current source and a first transistor connected in series. A digital-to-analog conversion section includes a plurality of second transistors each connected to one of the output signal lines and to the first transistor. Each of the second transistors forming a current mirror circuit with the first transistor. The digital-to-analog conversion section also includes a plurality of third transistors each connected between an output terminal and one of the output signal lines.

摘要翻译： 在数模转换器中，逻辑电路包括多个MOS晶体管，每个MOS晶体管具有连接到输入信号线之一的栅极，连接到第一电源端子的漏极和具有连接状态之一的源极， 源极连接到输出信号线之一和源不连接到输出信号线的断开状态。 参考电流源包括恒流源和串联连接的第一晶体管。 数模转换部分包括多个第二晶体管，每个第二晶体管连接到输出信号线之一和第一晶体管。 每个第二晶体管与第一晶体管形成电流镜电路。 数模转换部分还包括多个第三晶体管，每个第三晶体管连接在输出端和输出信号线之一之间。

公开(公告)号：US07994039B2

公开(公告)日：2011-08-09

申请号：US12399140

申请日：2009-03-06

申请人： Shinichi Hirasawa ,  Shinya Watanabe

发明人： Shinichi Hirasawa ,  Shinya Watanabe

IPC分类号： H01L21/28

CPC分类号： H01L21/28273 ,  H01L27/11521 ,  H01L29/7881

摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers.