公开(公告)号：US4400351A

公开(公告)日：1983-08-23

申请号：US269687

申请日：1981-06-02

申请人： Shinichi Komori ,  Yasushi Shimanuki ,  Isamu Suzuki

发明人： Shinichi Komori ,  Yasushi Shimanuki ,  Isamu Suzuki

IPC分类号： C22C9/00 ,  H01B1/02

CPC分类号： C22C9/00 ,  H01B1/026

摘要： An improved copper base alloy having excellent thermal resistance and electric conductivity. The alloy consists essentially of from 0.0005 to 0.01 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities. The copper base alloy may further contain from 0.002 to 0.05 percent magnesium whereby the magnesium imparts further enhanced thermal resistance to the alloy.

摘要翻译： 具有优异的耐热性和导电性的改进的铜基合金。 该合金基本上由0.0005％至0.01％的硼组成，选自0.001-0.01％的磷，0.002-0.03％的铟，0.001-0.06％的碲，及其混合物，余量为铜和不可避免的材料 杂质。 铜基合金还可含有0.002至0.05％的镁，由此镁赋予合金进一步增强的耐热性。

公开(公告)号：US4981549A

公开(公告)日：1991-01-01

申请号：US313799

申请日：1989-02-22

申请人： Ichiro Yamashita ,  Koutaro Shimizu ,  Yoshiaki Banba ,  Yasushi Shimanuki ,  Akira Higuchi ,  Hisashi Furuya

发明人： Ichiro Yamashita ,  Koutaro Shimizu ,  Yoshiaki Banba ,  Yasushi Shimanuki ,  Akira Higuchi ,  Hisashi Furuya

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/206 ,  Y10S148/003 ,  Y10S148/071 ,  Y10T117/1068

摘要： A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.

摘要翻译： 公开了一种硅单晶生长方法，其将晶种浸入硅熔体中并从熔体中拉出晶种，从而生长单晶硅，其中硅单晶的存在时间为 在1050℃至850℃的温度范围内被拉伸，设定为不超过140分钟。 适用于上述方法的装置具有坩埚，牵引机构和温度控制壳。 温度控制壳位于坩埚上方，用于以冷却速度冷却所述硅单晶，使得在1050℃至850℃之间的温度范围内拉动所述硅单晶的停留时间， 不超过140分钟。

公开(公告)号：US4704257A

公开(公告)日：1987-11-03

申请号：US644840

申请日：1984-08-28

申请人： Kenji Tomizawa ,  Koichi Sassa ,  Yasushi Shimanuki

发明人： Kenji Tomizawa ,  Koichi Sassa ,  Yasushi Shimanuki

IPC分类号： C30B15/00 ,  C30B15/10

CPC分类号： C30B15/10 ,  C30B29/40 ,  Y10S117/90 ,  Y10T117/1012 ,  Y10T117/106 ,  Y10T117/1064

摘要： An apparatus for pulling single crystals of dissociative compounds, with a volatile component gas sealed in a growth chamber at a controlled pressure thereof, is disclosed, wherein the chamber is made of one or more materials selected from the group consisting of ceramics, gas-tight carbon, heat-resistant metallic materials, ceramic-coated carbon and ceramic-coated heat-resistant metallic materials, the chamber can be divided, with a structure of the divided portion of the chamber capable of being sealed by making use of a sealing material with a pressure exerted on the seal, and an optical window is disposed in the chamber through which the growing state of the crystal in the chamber can be observed.

摘要翻译： 公开了一种用于将受控压力密封在生长室中的挥发性成分气体拉出解离化合物的单晶的装置，其中所述室由一种或多种选自陶瓷，气密性 碳，耐热金属材料，陶瓷涂覆碳和陶瓷涂覆的耐热金属材料，腔室可以分开，室的分割部分的结构能够通过使用密封材料被密封 施加在密封件上的压力和光学窗口设置在室中，通过该室可以观察到室中的晶体的生长状态。

公开(公告)号：US4664742A

公开(公告)日：1987-05-12

申请号：US735395

申请日：1985-05-17

申请人： Kenji Tomizawa ,  Yasushi Shimanuki ,  Koichi Sassa

发明人： Kenji Tomizawa ,  Yasushi Shimanuki ,  Koichi Sassa

IPC分类号： C30B15/02 ,  C30B27/02 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B27/02 ,  C30B29/40

摘要： The present invention provides a method for growing single crystals of a dissociative compound by pulling with a volatile component gas of the dissociative compound sealed at a controlled pressure in a heated growth chamber in which the single crystals are pulled, wherein a partition pipe having a lower density than the density of melt of the dissociative compound is disposed so as to immerse its lower end in the melt and the melt is covered with B.sub.2 O.sub.3 at either one of the inside or outside of the partition pipe. The method of the present invention enables the precise, appropriate control of the melt composition during the course of growing and thereby provides single crystals free from any detrimental contamination and undesirable dislocation problems. The thus obtained crystals are especially desirable for use as substrates for high speed and/or optical devices, because of their excellent semi-insulating properties.

摘要翻译： 本发明提供了一种通过在其中拉伸单晶的加热生长室中以受控的压力密封的解离化合物的挥发性成分气体拉动来生长离解化合物的单晶的方法，其中具有较低 配置比解离化合物的熔体密度高的密度，将其下端浸入熔体中，熔融物在分隔管的内部或外部的任意一个处被B2O3覆盖。 本发明的方法能够在生长过程中对熔体组合物进行精确的适当控制，从而提供没有任何有害污染物和不期望的脱位问题的单晶。 因为这样得到的晶体由于其优良的半绝缘性能而特别适合用作高速和/或光学器件的基片。