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1.发明授权Semiconductor light emitting device with transparent substrate and reflective slope 有权具有透明基板和反射斜率的半导体发光器件公开(公告)号：US07939838B2
公开(公告)日：2011-05-10
申请号：US11606379
申请日：2006-11-30
申请人： Shinichi Tanaka , Naochica Horio , Munehiro Kato , Satoshi Tanaka
发明人： Shinichi Tanaka , Naochica Horio , Munehiro Kato , Satoshi Tanaka
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.
摘要翻译： 半导体发光器件包括半导体层，该半导体层具有从其顶表面沿着封闭线的图案向下延伸的凹槽，使得所述凹部限定和包围发射光的半导体层的区域，所述半导体层具有向下的斜面 在其侧端面的至少一部分位于所述凹部的闭合线图案之外; 所述半导体层的侧端面的所述向下斜面上的第一电极与所述半导体层的一部分电接触，其中所述第一电极向下反射由所述半导体层发射并到达所述第一电极的光; 以及与位于所述凹部的闭合线图案内的所述半导体层的一部分电接触的第二电极。
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公开(公告)号：US20070176188A1
公开(公告)日：2007-08-02
申请号：US11606379
申请日：2006-11-30
申请人： Shinichi Tanaka , Naochica Horio , Munehiro Kato , Satoshi Tanaka
发明人： Shinichi Tanaka , Naochica Horio , Munehiro Kato , Satoshi Tanaka
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/13 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said semiconductor layer having a downward slope in at least a portion of its side end face located outside the closed line pattern of said recess; a first electrode on said downward slope of the side end face of the semiconductor layer and electrically in contact with a portion of said semiconductor layer, wherein said first electrode downwardly reflects light that is emitted by said semiconductor layer and that reaches the first electrode; and a second electrode electrically in contact with a portion of said semiconductor layer located inside the closed line pattern of said recess.
摘要翻译： 半导体发光器件包括半导体层，该半导体层具有从其顶表面沿着封闭线的图案向下延伸的凹槽，使得所述凹部限定和包围发射光的半导体层的区域，所述半导体层具有向下的斜面 在其侧端面的至少一部分位于所述凹部的闭合线图案之外; 所述半导体层的侧端面的所述向下斜面上的第一电极与所述半导体层的一部分电接触，其中所述第一电极向下反射由所述半导体层发射并到达所述第一电极的光; 以及与位于所述凹部的闭合线图案内的所述半导体层的一部分电接触的第二电极。
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公开(公告)号：US20080145961A1
公开(公告)日：2008-06-19
申请号：US12031068
申请日：2008-02-14
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。
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公开(公告)号：US07411220B2
公开(公告)日：2008-08-12
申请号：US11154814
申请日：2005-06-17
IPC分类号： H01L29/26
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。
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公开(公告)号：US07595206B2
公开(公告)日：2009-09-29
申请号：US12031068
申请日：2008-02-14
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。
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公开(公告)号：US20050281303A1
公开(公告)日：2005-12-22
申请号：US11154814
申请日：2005-06-17
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译： 半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。 该器件可以在衬底上包括透明衬底和半导体层。 半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。 第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。 半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。 设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。
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7.发明授权公开(公告)号：US08338202B2
公开(公告)日：2012-12-25
申请号：US12407290
申请日：2009-03-19
IPC分类号： H01L21/00
CPC分类号： H01L21/2007 , H01L33/0079
摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.
摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。
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8.发明申请公开(公告)号：US20090239324A1
公开(公告)日：2009-09-24
申请号：US12407290
申请日：2009-03-19
IPC分类号： H01L21/304 , H01L21/3205
CPC分类号： H01L21/2007 , H01L33/0079
摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.
摘要翻译： 在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。 然后，在第二导电型半导体层上形成电极层。 然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。 最后，去除生长衬底的至少一部分。 在这种情况下，粘合剂层可从电极层移除。
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公开(公告)号：US09678561B2
公开(公告)日：2017-06-13
申请号：US14036395
申请日：2013-09-25
申请人： Satoshi Tanaka
发明人： Satoshi Tanaka
IPC分类号： G06F1/32
CPC分类号： G06F1/3234 , G06F1/3284 , G06F1/3293 , Y02D10/122 , Y02D10/159
摘要： In the invention, a first processor that controls operation of a predetermined controlled unit and a second processor are operated in a first mode, a second mode, and a third mode, in the first mode the first processor and second processor are operable respectively, in the second mode respective amounts of power supplied to the first and second processors are lower than that in the first mode, in the third mode respective amounts of power supplied to the first and second processors are an amount between that in the first mode and that in the second mode and at least the predetermined controlled unit is operable, and in the second mode, the first processor puts a process related to the first processor before a process related to the second processor until the second mode is transited to the third mode.
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公开(公告)号：US09151470B2
公开(公告)日：2015-10-06
申请号：US13982636
申请日：2011-12-28
申请人： Fumimasa Amemiya , Toru Ochiai , Fumihide Sakamoto , Junya Ozawa , Satoshi Tanaka , Yuichi Kagami , Hiroyuki Hirokawa , Shinnosuke Enomoto , Koji Ogino
发明人： Fumimasa Amemiya , Toru Ochiai , Fumihide Sakamoto , Junya Ozawa , Satoshi Tanaka , Yuichi Kagami , Hiroyuki Hirokawa , Shinnosuke Enomoto , Koji Ogino
CPC分类号： F21V13/04 , G02B6/0045 , H04N1/02835 , H04N1/0289 , H04N1/1017
摘要： To provide an illumination device in which there is no variation in light intensity distribution of the illumination device, and in which illumination spots, particularly light intensity spots, are not prone to occur in a read image in an image reading device, by maintaining a constant gap between a light source and an end face of a light guide. The illumination device includes: a light guide having an end face for taking in light, a diffuse reflecting surface for diffusely reflecting the light taken in from the end face, and a light exit surface for emitting the light that is diffusely reflected at the diffuse reflecting surface towards an irradiation surface. The illumination device further include a reflector having a diffuse reflecting surface that reflects light from the light source toward the one end face of the light guide. The light guide has, at the one end, a flange portion that abuts the reflector, the light source is mounted to a circuit board, and the reflector is held between the flange portion of the light guide and circuit board so as to maintain a predetermined gap between the light source and light guide.
摘要翻译： 为了提供一种照明装置，其中照明装置的光强度分布没有变化，并且其中在图像读取装置中的读取图像中不容易发生照明点，特别是光强度点，通过保持恒定 光源与光导的端面之间的间隙。 照明装置包括：具有用于吸收光的端面的光导，用于漫反射从端面吸收的光的漫反射面，以及用于发射在漫反射处漫反射的光的光出射面 表面朝向照射表面。 照明装置还包括具有将来自光源的光朝向光导的一个端面反射的漫反射面的反射体。 导光体的一端具有与反射体抵接的凸缘部，光源安装在电路基板上，反射体保持在导光板的凸缘部与电路基板之间， 光源与光导之间的间隙。
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