公开(公告)号：US06626967B2

公开(公告)日：2003-09-30

申请号：US10283087

申请日：2002-10-30

申请人： Shinichiro Takami ,  Katsuyoshi Ina

发明人： Shinichiro Takami ,  Katsuyoshi Ina

IPC分类号： C09G102

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： A polishing composition comprising the following components (a) to (c): (a) colloidal silica; (b) at least one bicarbonate selected from the group consisting of ammonium bicarbonate, lithium bicarbonate, potassium bicarbonate, sodium bicarbonate and a mixture thereof; and (c) water; wherein the concentration of each of the elements included in Groups 2A, 3A, 4A, 5A, 6A, 7A, 8A, 1B and 2B, lanthanoid and actinoid, and the concentration of each element of aluminum, gallium, indium, thallium, tin, lead, bismuth, fluorine and chlorine, are at most 100 ppb in the polishing composition, respectively.

摘要翻译： 一种抛光组合物，其包含以下组分（a）至（c）：（a）胶态二氧化硅;（b）至少一种选自碳酸氢铵，碳酸氢锂，碳酸氢钾，碳酸氢钠及其混合物的碳酸氢盐; 和（c）水;其中包括在2A，3A，4A，5A，6A，7A，8A，1B和2B族中的每种元素的浓度，镧系元素和锕系元素，以及铝，镓， 铟，铊，锡，铅，铋，氟和氯分别在抛光组合物中为100ppb以下。

公开(公告)号：US07052522B2

公开(公告)日：2006-05-30

申请号：US10673767

申请日：2003-09-29

申请人： Shinichiro Takami

发明人： Shinichiro Takami

IPC分类号： C09G1/02 ,  C09G1/04 ,  B24B1/00

CPC分类号： H01L21/02021 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625

摘要： A polishing composition of the present invention, which is used in polishing the edge of a wafer for semiconductor devices, effectively suppresses remaining amounts of abrasives on the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The average primary particle diameter DSA of the silicon dioxide is at least 40 nm. The ratio D95/D5 of the silicon dioxide is no more than 3.8. The value D95/D5/DSA of the silicon dioxide is no more than 0.07.

摘要翻译： 用于抛光半导体器件的晶片的边缘的本发明的抛光组合物有效地抑制了晶片上的研磨剂的剩余量。 抛光组合物包括二氧化硅，碱性化合物，水溶性聚合物和水。 二氧化硅的平均一次粒径D SA>至少为40nm。 二氧化硅的D D 95 / D 5比例不大于3.8。 二氧化硅的值D N不大于0.07。

公开(公告)号：US07597729B2

公开(公告)日：2009-10-06

申请号：US11823606

申请日：2007-06-28

申请人： Shinichiro Takami

发明人： Shinichiro Takami

IPC分类号： B24B1/00 ,  C09G1/02 ,  C09G1/04 ,  H01L21/302 ,  H01L21/304

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/30625

摘要： A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent. The polishing composition is suitable for use in polishing an edge of an object such as a semiconductor substrate.

摘要翻译： 抛光组合物含有胶体二氧化硅，至少一种选自咪唑和咪唑衍生物的化合物和水的研磨剂。 抛光组合物优选还含有碱性化合物，水溶性聚合物或螯合剂。 抛光组合物适用于抛光诸如半导体衬底的物体的边缘。

公开(公告)号：US20070256368A1

公开(公告)日：2007-11-08

申请号：US11823606

申请日：2007-06-28

申请人： Shinichiro Takami

发明人： Shinichiro Takami

IPC分类号： B24D3/02

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/30625

摘要： A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent. The polishing composition is suitable for use in polishing an edge of an object such as a semiconductor substrate.

摘要翻译： 抛光组合物含有胶体二氧化硅，至少一种选自咪唑和咪唑衍生物的化合物和水的研磨剂。 抛光组合物优选还含有碱性化合物，水溶性聚合物或螯合剂。 抛光组合物适用于抛光诸如半导体衬底的物体的边缘。

公开(公告)号：US20060080896A1

公开(公告)日：2006-04-20

申请号：US11250103

申请日：2005-10-13

申请人： Shinichiro Takami

发明人： Shinichiro Takami

IPC分类号： C09K3/14

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/30625

摘要： A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition preferably further contains an alkali compound, a water-soluble polymer, or a chelating agent. The polishing composition is suitable for use in polishing an edge of an object such as a semiconductor substrate.