公开(公告)号：US07981704B2

公开(公告)日：2011-07-19

申请号：US11868629

申请日：2007-10-08

申请人： Shinji Abe ,  Kazushige Kawasaki

发明人： Shinji Abe ,  Kazushige Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/34333

摘要： After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

摘要翻译： 在半导体层叠结构上层压金属盖层之后，形成波导脊，将波导脊涂覆有SiO 2膜，并施加抗蚀剂; 然后，形成抗蚀剂图案，抗蚀剂图案将波导脊的顶部上的SiO 2膜的表面曝光，并且将SiO 2膜在具有比金属盖层的表面高的表面的抗蚀剂膜的通道中埋入 波导脊并且低于波导脊的SiO 2膜的表面; 通过干蚀刻除去SiO 2膜，使用抗蚀剂图案作为掩模。 通过湿蚀刻去除金属盖层，并且暴露波导脊的p-GaN层以形成电极层。

公开(公告)号：US20090184336A1

公开(公告)日：2009-07-23

申请号：US12170503

申请日：2008-07-10

申请人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

发明人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Hitoshi Sakuma

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.

摘要翻译： 一种半导体发光器件包括：半导体层; 半导体层上的绝缘膜，并具有开口; 绝缘膜上的多层粘合剂层; 以及通过开口与半导体层接触并与多层粘合剂层接触的Pd电极。 多层粘合剂层包括顶部的Au层和在Au层和Pd电极之间的界面处的Au和Pd的合金。

公开(公告)号：US20100151658A1

公开(公告)日：2010-06-17

申请号：US12534925

申请日：2009-08-04

申请人： Shinji Abe ,  Kazushige Kawasaki

发明人： Shinji Abe ,  Kazushige Kawasaki

IPC分类号： H01L21/20

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/34333 ,  Y10S117/915

摘要： A method for manufacturing a nitride semiconductor device, comprises epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.

摘要翻译： 一种用于制造氮化物半导体器件的方法，包括在GaN衬底的Ga表面上外延生长GaN基材料的半导体层，同时在外延生长期间将GaN衬底安装在衬底保持器上的衬底翘曲， 沉积物沉积在衬底的N表面上; 以及在半导体层的外延生长之后对GaN衬底的N表面进行真空吸附; 在半导体层已经外延生长之后，并且在n型GaN衬底的N表面经受真空抽吸之前，从GaN衬底的N侧除去外延沉积物。

公开(公告)号：US20090127661A1

公开(公告)日：2009-05-21

申请号：US12271946

申请日：2008-11-17

申请人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

发明人： Katsuomi Shiozawa ,  Kyozo Kanamoto ,  Toshiyuki Oishi ,  Hiroshi Kurokawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC分类号： H01L29/20 ,  H01L21/31

CPC分类号： H01S5/32341 ,  H01S5/0425 ,  H01S5/22 ,  H01S2301/173

摘要： Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO2 film covering at least the side face of the ridge, an adherence layer formed on a surface of the SiO2 film and composed mainly of silicon, and a P-type electrode formed on the upper surface of the ridge and on a surface of the adherence layer.

摘要翻译： 半导体器件，特别是用于制造激光二极管的氮化物半导体器件，防止电极剥离，并且同时降低了工艺的复杂性和产量的降低。 根据本发明的氮化物半导体器件包括其表面上具有脊的P型氮化物半导体层，至少覆盖脊的侧面的SiO 2膜，形成在SiO 2膜的表面上并且主要组成的粘附层 的硅，以及形成在脊的上表面上和粘附层的表面上的P型电极。

公开(公告)号：US20080090315A1

公开(公告)日：2008-04-17

申请号：US11868629

申请日：2007-10-08

申请人： Shinji Abe ,  Kazushige Kawasaki

发明人： Shinji Abe ,  Kazushige Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/34333

摘要： After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.

摘要翻译： 在半导体层叠结构上层压金属覆盖层之后，形成波导脊，将波导脊涂覆有SiO 2膜，并施加抗蚀剂; 然后，形成抗蚀剂图案，抗蚀剂图案将波导脊的顶部上的SiO 2膜的表面曝光，并且在SiO 2膜中埋入SiO 2膜， 具有比波导脊的金属盖层的表面高的表面的抗蚀剂膜，并且低于波导脊的SiO 2膜的表面; 通过干蚀刻除去SiO 2膜，使用抗蚀剂图案作为掩模。 通过湿蚀刻去除金属盖层，并且暴露波导脊的p-GaN层以形成电极层。

公开(公告)号：US20100244074A1

公开(公告)日：2010-09-30

申请号：US12716399

申请日：2010-03-03

申请人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Junichi Horie ,  Hitoshi Sakuma

发明人： Takafumi Oka ,  Shinji Abe ,  Kazushige Kawasaki ,  Junichi Horie ,  Hitoshi Sakuma

IPC分类号： H01L33/58

CPC分类号： H01S5/34306 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3213

摘要： A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced.

摘要翻译： 提供了一种半导体发光器件和制造方法，其中利用突出形状的抗蚀剂图案，沉积金属膜，其间绝缘膜和金属膜的边缘之间的位置差异与脊形波导顶面相对。 通过使用金属膜作为掩模，通过蚀刻脊形波导顶面上的绝缘膜，通过绝缘膜延伸宽度而不进行另一掩蔽步骤。 p侧电极和p型接触层之间的接触面积增大，半导体发光元件的工作电压降低。

公开(公告)号：US20090170225A1

公开(公告)日：2009-07-02

申请号：US12331515

申请日：2008-12-10

申请人： Takafumi Oka ,  Masatsugu Kusunoki ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

发明人： Takafumi Oka ,  Masatsugu Kusunoki ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/40

摘要： A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.

摘要翻译： 一种半导体发光器件的制造方法，包括在半导体衬底上形成绝缘膜，所述绝缘膜在其中具有开口，在所述开口和所述绝缘膜上形成Pd电极，并且在所述绝缘膜上除去所述Pd电极的所述部分 通过对该部分施加物理力，同时将Pd电极留在开口中。

公开(公告)号：US20090130790A1

公开(公告)日：2009-05-21

申请号：US12264976

申请日：2008-11-05

申请人： Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

发明人： Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC分类号： H01L21/20

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

摘要翻译： 一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体， 在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

公开(公告)号：US07964424B2

公开(公告)日：2011-06-21

申请号：US12264976

申请日：2008-11-05

申请人： Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

发明人： Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

摘要翻译： 一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠有n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体， 在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

公开(公告)号：US07901966B2

公开(公告)日：2011-03-08

申请号：US12534925

申请日：2009-08-04

申请人： Shinji Abe ,  Kazushige Kawasaki

发明人： Shinji Abe ,  Kazushige Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/34333 ,  Y10S117/915

摘要： A method for manufacturing a nitride semiconductor device, comprises: epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.

摘要翻译： 一种用于制造氮化物半导体器件的方法，包括：在GaN衬底的Ga表面上外延生长GaN基材料的半导体层，同时将GaN衬底在外延生长期间将基板安装在衬底翘曲上，使得 外延沉积沉积在衬底的N表面上; 以及在半导体层的外延生长之后对GaN衬底的N表面进行真空吸附; 在半导体层已经外延生长之后，并且在n型GaN衬底的N表面经受真空抽吸之前，从GaN衬底的N侧除去外延沉积物。