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    CPP type magneto-resistive effect device and magnetic disk system
    1.
    发明申请
    CPP type magneto-resistive effect device and magnetic disk system 有权
    CPP型磁阻效应器和磁盘系统

    公开(公告)号：US20090086383A1

    公开(公告)日：2009-04-02

    申请号：US11865384

    申请日：2007-10-01

    申请人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

    发明人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

    摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

    摘要翻译： 本发明提供了包括间隔层的CPP（电流垂直于平面）结构（CPP-GMR器件）的巨磁阻效应器件，以及与夹在它们之间的间隔层堆叠在一起的第一铁磁层和第二铁磁层 ，其中感测电流在层叠方向上通过，其中第一铁磁层和第二铁磁层的功能使得两个磁体的磁化方向之间产生的角度根据外部磁场而相对地改变，所述间隔层包含半导体 氧化物层和氮元素界面保护层设置在形成全部或一部分所述间隔层的半导体氧化物层与绝缘层接触的位置。 因此，在半导体氧化物层和界面保护层的结的表面形成有高共价键合能力的氮化物，从而抑制氧从半导体氧化物层向绝缘层的迁移; 即使该装置在该过程中经受热和应力，阻止装置特性的波动和劣化。

    Magnetoresistive element including layered film touching periphery of spacer layer
    2.
    发明申请
    Magnetoresistive element including layered film touching periphery of spacer layer 有权
    磁阻元件包括层间膜接触间隔层的周边

    公开(公告)号：US20090067099A1

    公开(公告)日：2009-03-12

    申请号：US11898335

    申请日：2007-09-11

    申请人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

    摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。 磁阻元件还包括接触间隔层的周边的层状膜。 间隔层包括使用氧化物半导体作为材料形成的半导体层。 层叠膜包括依次堆叠的第一层，第二层和第三层。 第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。 第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。 第三层是绝缘层。

    Magnetoresistive element including layered film touching periphery of spacer layer
    4.
    发明授权
    Magnetoresistive element including layered film touching periphery of spacer layer 有权
    磁阻元件包括层间膜接触间隔层的周边

    公开(公告)号：US07944650B2

    公开(公告)日：2011-05-17

    申请号：US11898335

    申请日：2007-09-11

    申请人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

    摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。 磁阻元件还包括接触间隔层的周边的层状膜。 间隔层包括使用氧化物半导体作为材料形成的半导体层。 层叠膜包括依次堆叠的第一层，第二层和第三层。 第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。 第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。 第三层是绝缘层。

    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    7.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    CPP type magneto-resistive effect device and magnetic disk system
    8.
    发明授权
    CPP type magneto-resistive effect device and magnetic disk system 有权

    公开(公告)号：US08472149B2

    公开(公告)日：2013-06-25

    申请号：US11865384

    申请日：2007-10-01

    申请人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

    发明人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

    IPC分类号： G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

    摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

    MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    10.
    发明申请
    MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权

    公开(公告)号：US20090290264A1

    公开(公告)日：2009-11-26

    申请号：US12126567

    申请日：2008-05-23

    申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.